24 EEPROM 195

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
X2816BP-25	Xicor	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs	100	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		5.5 V	4.82 mm			15.24 mm	Not Qualified		16384 bit	4.5 V	16 BYTE PAGE WRITE; OVER 100 YEARS DATA RETENTION	16	e0			.07 Amp	31.56 mm	250 ns	5	YES
CAT28C16AL-20	Onsemi	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	IN-LINE	DIP24,.6	EEPROMs	100	2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN	DUAL	R-PDIP-T24		5.5 V	6.35 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms	16384 bit	4.5 V			e3			.0001 Amp	31.875 mm	200 ns	5	YES
AT28C16-15PI	Microchip Technology	EEPROM		24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	2048 words	5			8	IN-LINE	DIP24,.6		10	2.54 mm	85 Cel		2KX8	2K	-40 Cel	NO		DUAL	R-PDIP-T24		5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm		1 ms	16384 bit	4.5 V						.0001 Amp	31.9 mm	150 ns	5	YES
AT28C16E-15PI	Microchip Technology	EEPROM		24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	2048 words	5			8	IN-LINE	DIP24,.6		10	2.54 mm	85 Cel		2KX8	2K	-40 Cel	NO		DUAL	R-PDIP-T24		5.5 V	5.59 mm	100000 Write/Erase Cycles		15.24 mm		.2 ms	16384 bit	4.5 V						.0001 Amp	31.9 mm	150 ns	5	YES
CAT28C16ALI-12	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	IN-LINE	DIP24,.6	EEPROMs	100	2.54 mm	85 Cel		2KX8	2K	-40 Cel	NO	Tin (Sn)	DUAL	R-PDIP-T24		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms	16384 bit	4.5 V			e3			.0001 Amp	31.875 mm	120 ns	5	YES
CAT28C16AW-20T	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN	DUAL	R-PDSO-G24	1	5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms	16384 bit	4.5 V			e3	30	260	.0001 Amp	15.4 mm	200 ns	5	YES
CAT28C16AWI90	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V				NOT SPECIFIED	260	.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16AWI-90	Catalyst Semiconductor	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO	5	8	SMALL OUTLINE	SOP24,.4	EEPROMs		1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	MATTE TIN	DUAL	R-PDSO-G24	1	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V			e3			.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16ALI-20	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	IN-LINE	DIP24,.6	EEPROMs	100	2.54 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN	DUAL	R-PDIP-T24		5.5 V	6.35 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms	16384 bit	4.5 V			e3			.0001 Amp	31.875 mm	200 ns	5	YES
EPCQL1024F24IN	Infineon Technologies	CONFIGURATION MEMORY	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		1073741824 words	1.8			1	GRID ARRAY					85 Cel		1GX1	1G	-40 Cel			BOTTOM	R-PBGA-B24		2 V			100 MHz				1073741824 bit	1.7 V
AT28C16-15PC	Microchip Technology	EEPROM		24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5			8	IN-LINE	DIP24,.6		10	2.54 mm	70 Cel		2KX8	2K	0 Cel	NO		DUAL	R-PDIP-T24		5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm		1 ms	16384 bit	4.5 V						.0001 Amp	31.9 mm	150 ns	5	YES
AT28C16-20SC	Atmel	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	10	1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDSO-G24		5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	1 ms	16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0			.0001 Amp	15.4 mm	200 ns	5	YES
AT28C16F-15PI	Atmel	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	2048 words	5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	.2 ms	16384 bit	4.5 V	AUTOMATIC WRITE		e0			.0001 Amp	31.9 mm	150 ns	5	YES
5962-01-248-0239	Texas Instruments	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE				1024 words	5		5	8	IN-LINE	DIP24,.6	OTP ROMs		2.54 mm	70 Cel		1KX8	1K	0 Cel			DUAL	R-PDIP-T24							Not Qualified		8192 bit					NOT SPECIFIED	NOT SPECIFIED			70 ns	2.7
5962-01-248-0235	Texas Instruments	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		TTL	THROUGH-HOLE				1024 words	5		5	8	IN-LINE	DIP24,.6	OTP ROMs		2.54 mm	70 Cel		1KX8	1K	0 Cel			DUAL	R-XDIP-T24							Not Qualified		8192 bit					NOT SPECIFIED	NOT SPECIFIED			70 ns	2.7
CAT28C16AW20	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN	DUAL	R-PDSO-G24	1	5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms	16384 bit	4.5 V			e3			.0001 Amp	15.4 mm	200 ns	5	YES
CAT28C16AK-20T	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms	16384 bit	4.5 V				30	240	.0001 Amp	15.4 mm	200 ns	5	YES
CAT28C16AK-90	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V				30	240	.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16AJA-90	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	105 Cel		2KX8	2K	-40 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V				30	240	.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16AKA-12T	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	105 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD	DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V			e0			.0001 Amp	15.4 mm	120 ns	5	YES
CAT28C16ALI-20T	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO		8	IN-LINE	DIP24,.6		10	2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO		DUAL	R-PDIP-T24		5.5 V	6.35 mm	10000 Write/Erase Cycles		15.24 mm		10 ms	16384 bit	4.5 V						.0001 Amp	31.875 mm	200 ns		YES
CAT28C16ALA-90T	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO		8	IN-LINE	DIP24,.6		100	2.54 mm	105 Cel	3-STATE	2KX8	2K	-40 Cel	NO		DUAL	R-PDIP-T24		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm		5 ms	16384 bit	4.5 V						.0001 Amp	31.875 mm	90 ns		YES
CAT28C16AWA20	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	105 Cel		2KX8	2K	-40 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms	16384 bit	4.5 V				NOT SPECIFIED	260	.0001 Amp	15.4 mm	200 ns	5	YES
CAT28C16AWI-20TE7	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		2KX8	2K	-40 Cel		MATTE TIN	DUAL	R-PDSO-G24	1	5.5 V	2.65 mm			7.5 mm	Not Qualified		16384 bit	4.5 V			e3				15.4 mm	200 ns	5
CAT28C16AKI-12T	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD	DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V			e0			.0001 Amp	15.4 mm	120 ns	5	YES
CAT28C16AK-90T	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V				30	240	.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16ALI-12T	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO		8	IN-LINE	DIP24,.6		100	2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO		DUAL	R-PDIP-T24		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm		5 ms	16384 bit	4.5 V						.0001 Amp	31.875 mm	120 ns		YES
CAT28C16AJA-20	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	105 Cel		2KX8	2K	-40 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms	16384 bit	4.5 V				30	240	.0001 Amp	15.4 mm	200 ns	5	YES
CAT28C16AKI-20	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms	16384 bit	4.5 V				30	240	.0001 Amp	15.4 mm	200 ns	5	YES
CAT28C16AX-12	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V				NOT SPECIFIED	260	.0001 Amp	15.4 mm	120 ns	5	YES
CAT28C16ALA-12T	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO		8	IN-LINE	DIP24,.6		100	2.54 mm	105 Cel	3-STATE	2KX8	2K	-40 Cel	NO		DUAL	R-PDIP-T24		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm		5 ms	16384 bit	4.5 V						.0001 Amp	31.875 mm	120 ns		YES
CAT28C16AKA-12	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	105 Cel		2KX8	2K	-40 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V				30	240	.0001 Amp	15.4 mm	120 ns	5	YES
CAT28C16AJ-90T	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V				30	240	.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16AKI-90T	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD	DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V			e0			.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16AJ-90	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V				30	240	.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16ALA-12	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	IN-LINE	DIP24,.6	EEPROMs	100	2.54 mm	105 Cel		2KX8	2K	-40 Cel	NO	TIN	DUAL	R-PDIP-T24		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms	16384 bit	4.5 V			e3			.0001 Amp	31.875 mm	120 ns	5	YES
CAT28C16AP-20	Onsemi	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		5.5 V	5.08 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms	16384 bit	4.5 V			e0			.0001 Amp	31.875 mm	200 ns	5	YES
CAT28C16AW-20TE13	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		2KX8	2K	0 Cel		MATTE TIN	DUAL	R-PDSO-G24	1	5.5 V	2.65 mm			7.5 mm	Not Qualified		16384 bit	4.5 V			e3				15.4 mm	200 ns	5
CAT28C16AX-20T	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms	16384 bit	4.5 V				NOT SPECIFIED	260	.0001 Amp	15.4 mm	200 ns	5	YES
CAT28C16AW-12T	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN	DUAL	R-PDSO-G24	1	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V			e3	30	260	.0001 Amp	15.4 mm	120 ns	5	YES
CAT28C16AW-90T	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V				NOT SPECIFIED	260	.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16AXI-20T	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN	DUAL	R-PDSO-G24		5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms	16384 bit	4.5 V			e3		260	.0001 Amp	15.4 mm	200 ns	5	YES
CAT28C16AX-90T	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V				NOT SPECIFIED	260	.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16AKA-90	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	105 Cel		2KX8	2K	-40 Cel	NO		DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V				30	240	.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16AJA-20T	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	105 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD	DUAL	R-PDSO-G24		5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms	16384 bit	4.5 V			e0			.0001 Amp	15.4 mm	200 ns	5	YES
CAT28C16AL-12T	Onsemi	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO		8	IN-LINE	DIP24,.6		100	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO		DUAL	R-PDIP-T24		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm		5 ms	16384 bit	4.5 V						.0001 Amp	31.875 mm	120 ns		YES
CAT28C16AKI-20TE13	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		2KX8	2K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G24	1	5.5 V	2.65 mm			7.5 mm	Not Qualified		16384 bit	4.5 V			e0				15.4 mm	200 ns	5
CAT28C16AWA-90T	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	105 Cel		2KX8	2K	-40 Cel	NO	TIN	DUAL	R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms	16384 bit	4.5 V			e3			.0001 Amp	15.4 mm	90 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.