24 EEPROM 195

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28LV16-200P6	STMicroelectronics	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		3.6 V	5.08 mm		15.24 mm	Not Qualified		16384 bit	2.7 V		64	e0	.00005 Amp	31.75 mm	200 ns	3	YES
M28C16-90MS6	STMicroelectronics	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	SMALL OUTLINE	SOP24,.4	EEPROMs		1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD	DUAL	R-PDSO-G24		5.5 V	2.65 mm		7.5 mm	Not Qualified		16384 bit	4.5 V		64	e0	.0001 Amp	15.4 mm	90 ns	5	YES
M28LV16-300MS6T	STMicroelectronics	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3.3			8	SMALL OUTLINE				1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel			DUAL	R-PDSO-G24		3.6 V	2.65 mm		7.5 mm	Not Qualified		16384 bit	2.7 V					15.4 mm	300 ns	3
M28LV16-300MS1	STMicroelectronics	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	SMALL OUTLINE	SOP24,.4	EEPROMs		1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDSO-G24		3.6 V	2.65 mm		7.5 mm	Not Qualified		16384 bit	2.7 V		64	e0	.00005 Amp	15.4 mm	300 ns	3	YES
M28C16-120P6	STMicroelectronics	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		5.5 V	5.08 mm		15.24 mm	Not Qualified		16384 bit	4.5 V		64	e0	.0001 Amp	31.75 mm	120 ns	5	YES
M28C16-150MS6	STMicroelectronics	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	SMALL OUTLINE	SOP24,.4	EEPROMs		1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD	DUAL	R-PDSO-G24		5.5 V	2.65 mm		7.5 mm	Not Qualified		16384 bit	4.5 V		64	e0	.0001 Amp	15.4 mm	150 ns	5	YES
M28LV16-250P6	STMicroelectronics	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		3.6 V	5.08 mm		15.24 mm	Not Qualified		16384 bit	2.7 V		64	e0	.00005 Amp	31.75 mm	250 ns	3	YES
M28C16-120P1	STMicroelectronics	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		5.5 V	5.08 mm		15.24 mm	Not Qualified		16384 bit	4.5 V		64	e0	.0001 Amp	31.75 mm	120 ns	5	YES
M28C16-120MS1	STMicroelectronics	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	SMALL OUTLINE	SOP24,.4	EEPROMs		1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDSO-G24		5.5 V	2.65 mm		7.5 mm	Not Qualified		16384 bit	4.5 V		64	e0	.0001 Amp	15.4 mm	120 ns	5	YES
M28LV16-300P6	STMicroelectronics	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		3.6 V	5.08 mm		15.24 mm	Not Qualified		16384 bit	2.7 V		64	e0	.00005 Amp	31.75 mm	300 ns	3	YES
M28C16-90MS6T	STMicroelectronics	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5			8	SMALL OUTLINE				1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel			DUAL	R-PDSO-G24		5.5 V	2.65 mm		7.5 mm	Not Qualified		16384 bit	4.5 V					15.4 mm	90 ns	5
M28LV16-200MS1	STMicroelectronics	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	SMALL OUTLINE	SOP24,.4	EEPROMs		1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDSO-G24		3.6 V	2.65 mm		7.5 mm	Not Qualified		16384 bit	2.7 V		64	e0	.00005 Amp	15.4 mm	200 ns	3	YES
M28C16-150MS1	STMicroelectronics	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	SMALL OUTLINE	SOP24,.4	EEPROMs		1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDSO-G24		5.5 V	2.65 mm		7.5 mm	Not Qualified		16384 bit	4.5 V		64	e0	.0001 Amp	15.4 mm	150 ns	5	YES
M28LV16-250MS6T	STMicroelectronics	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3.3			8	SMALL OUTLINE				1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel			DUAL	R-PDSO-G24		3.6 V	2.65 mm		7.5 mm	Not Qualified		16384 bit	2.7 V					15.4 mm	250 ns	3
M28LV16-250MS1	STMicroelectronics	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	SMALL OUTLINE	SOP24,.4	EEPROMs		1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDSO-G24		3.6 V	2.65 mm		7.5 mm	Not Qualified		16384 bit	2.7 V		64	e0	.00005 Amp	15.4 mm	250 ns	3	YES
M28LV16-250P1	STMicroelectronics	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		3.6 V	5.08 mm		15.24 mm	Not Qualified		16384 bit	2.7 V		64	e0	.00005 Amp	31.75 mm	250 ns	3	YES
M28LV16-200MS6T	STMicroelectronics	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3.3			8	SMALL OUTLINE				1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel			DUAL	R-PDSO-G24		3.6 V	2.65 mm		7.5 mm	Not Qualified		16384 bit	2.7 V					15.4 mm	200 ns	3
5962-01-413-5025	STMicroelectronics	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			125 mA	4096 words	COMMON	5		5	8	IN-LINE	DIP24,.6	EPROMs		2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel			DUAL	R-XDIP-T24	1					Not Qualified		32768 bit							250 ns	2.7
5962-01-168-7581	STMicroelectronics	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			125 mA	4096 words	COMMON	5		5	8	IN-LINE	DIP24,.6	EPROMs		2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel			DUAL	R-XDIP-T24	1					Not Qualified		32768 bit							450 ns	2.7
5962-01-308-7814	STMicroelectronics	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	2048 words	COMMON	5		5	8	IN-LINE	DIP24,.6	EPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel			DUAL	R-XDIP-T24	1					Not Qualified		16384 bit							450 ns	2.7
5962-01-309-3322	STMicroelectronics	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	2048 words	COMMON	5		5	8	IN-LINE	DIP24,.6	EPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel			DUAL	R-XDIP-T24	1					Not Qualified		16384 bit							450 ns	2.7
5962-01-308-7811	STMicroelectronics	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	2048 words	COMMON	5		5	8	IN-LINE	DIP24,.6	EPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel			DUAL	R-XDIP-T24	1					Not Qualified		16384 bit							450 ns	2.7
5962-01-308-7812	STMicroelectronics	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	2048 words	COMMON	5		5	8	IN-LINE	DIP24,.6	EPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel			DUAL	R-XDIP-T24	1					Not Qualified		16384 bit							450 ns	2.7
5962-01-308-7815	STMicroelectronics	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	2048 words	COMMON	5		5	8	IN-LINE	DIP24,.6	EPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel			DUAL	R-XDIP-T24	1					Not Qualified		16384 bit							450 ns	2.7
5962-01-308-7813	STMicroelectronics	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	2048 words	COMMON	5		5	8	IN-LINE	DIP24,.6	EPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel			DUAL	R-XDIP-T24	1					Not Qualified		16384 bit							450 ns	2.7
5962-01-385-8295	STMicroelectronics	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	2048 words	COMMON	5		5	8	IN-LINE	DIP24,.6	EPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel			DUAL	R-XDIP-T24	1					Not Qualified		16384 bit							450 ns	2.7
5962-01-108-4751	STMicroelectronics	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	2048 words	COMMON	5		5	8	IN-LINE	DIP24,.6	EPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel			DUAL	R-XDIP-T24	1					Not Qualified		16384 bit							350 ns	2.7
5962-01-349-6381	STMicroelectronics	EEPROM CARD	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			125 mA	4096 words	COMMON	5		5	8	IN-LINE	DIP24,.6	EPROMs		2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel			DUAL	R-XDIP-T24	1					Not Qualified		32768 bit							250 ns	2.7
5962-01-308-7810	STMicroelectronics	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	2048 words	COMMON	5		5	8	IN-LINE	DIP24,.6	EPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel			DUAL	R-XDIP-T24	1					Not Qualified		16384 bit							450 ns	2.7
UPD28C04C-25	Renesas Electronics	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	512 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel		512X8	512	0 Cel	NO	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24		5.5 V		100000 Write/Erase Cycles		Not Qualified	10 ms	4096 bit	4.5 V			e0	.0001 Amp		250 ns		YES
UPD28C04G-25	Renesas Electronics	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	512 words		5	NO	5	8	SMALL OUTLINE	SOP24,.5	EEPROMs		1.27 mm	70 Cel		512X8	512	0 Cel	NO	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24		5.5 V		100000 Write/Erase Cycles		Not Qualified	10 ms	4096 bit	4.5 V			e0	.0001 Amp		250 ns		YES
UPD28C04G-20	Renesas Electronics	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	512 words		5	NO	5	8	SMALL OUTLINE	SOP24,.5	EEPROMs		1.27 mm	70 Cel		512X8	512	0 Cel	NO	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24		5.5 V		100000 Write/Erase Cycles		Not Qualified	10 ms	4096 bit	4.5 V			e0	.0001 Amp		200 ns		YES
UPD28C05G-25	Renesas Electronics	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	512 words		5	NO	5	8	SMALL OUTLINE	SOP24,.5	EEPROMs		1.27 mm	70 Cel		512X8	512	0 Cel	NO	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24		5.5 V				Not Qualified		4096 bit	4.5 V			e0	.0001 Amp		250 ns		YES
UPD28C05C-25	Renesas Electronics	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	512 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel		512X8	512	0 Cel	NO	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24		5.5 V				Not Qualified		4096 bit	4.5 V			e0	.0001 Amp		250 ns		YES
UPD28C05C-20	Renesas Electronics	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	512 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel		512X8	512	0 Cel	NO	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24		5.5 V				Not Qualified		4096 bit	4.5 V			e0	.0001 Amp		200 ns		YES
UPD28C05G-20	Renesas Electronics	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	512 words		5	NO	5	8	SMALL OUTLINE	SOP24,.5	EEPROMs		1.27 mm	70 Cel		512X8	512	0 Cel	NO	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24		5.5 V				Not Qualified		4096 bit	4.5 V			e0	.0001 Amp		200 ns		YES
UPD454D	Renesas Electronics	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE	PARALLEL			256 words			NO	5,12	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel		256X8	256	-10 Cel	NO	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24						Not Qualified		2048 bit				e0			800 ns		NO
UPD28C04C-20	Renesas Electronics	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	512 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel		512X8	512	0 Cel	NO	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24		5.5 V		100000 Write/Erase Cycles		Not Qualified	10 ms	4096 bit	4.5 V			e0	.0001 Amp		200 ns		YES
KM2816A-25	Samsung	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL		110 mA	2048 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24	3					Not Qualified		16384 bit				e0	.05 Amp		250 ns		NO
KM2816A-45N	Samsung	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL		110 mA	2048 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24	3					Not Qualified		16384 bit				e0	.05 Amp		450 ns		NO
KM28C16-25	Samsung	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs	10	2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		5.5 V	4.44 mm		15.24 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0	.0001 Amp		250 ns	5	YES
KM28C16-20	Samsung	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs	10	2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		5.5 V	4.44 mm		15.24 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0	.0001 Amp		200 ns	5	YES
KM2816A-30	Samsung	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL		110 mA	2048 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24	3					Not Qualified		16384 bit				e0	.05 Amp		300 ns		NO
KM28C16-15	Samsung	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs	10	2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		5.5 V	4.44 mm		15.24 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0	.0001 Amp		150 ns	5	YES
KM2816A-35N	Samsung	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL		110 mA	2048 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24	3					Not Qualified		16384 bit				e0	.05 Amp		350 ns		NO
KM2816A-30N	Samsung	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL		110 mA	2048 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24	3					Not Qualified		16384 bit				e0	.05 Amp		300 ns		NO
KM28C16I-25	Samsung	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs	10	2.54 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24		5.5 V	4.44 mm		15.24 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0	.0001 Amp		250 ns	5	YES
KM2816A-35	Samsung	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T24	3	5.5 V	6.98 mm		15.24 mm	Not Qualified		16384 bit	4.5 V	SEATED HT-CALCULATED		e0	.05 Amp	32 mm	350 ns	5	NO

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.