32 EEPROM 2,047

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28HC64B-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN	QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V		64	e3	40	245	.0001 Amp	13.97 mm	120 ns	5	YES
AT28C64B-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN	QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm		10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e3		245	.0001 Amp	13.97 mm	150 ns	5	YES
AT28C256-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN	QUAD		HARDWARE/SOFTWARE	R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e3	40	245	.0002 Amp	13.97 mm	150 ns	5	YES
AT28HC256-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e3	40	245	.0003 Amp	13.97 mm	120 ns	5	YES
AT28C64B-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN	QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e3		245	.0001 Amp	13.97 mm	150 ns	5	YES
AT28LV010-20JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3	YES	3.3	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	NO	MATTE TIN	QUAD	1		R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	1048576 bit	3.135 V		128	e3			.00005 Amp	13.97 mm	200 ns	3.3	YES
AT28C256-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm		11.43 mm		10 ms	262144 bit	4.5 V			e3	40	245		13.97 mm	150 ns	5
AT28C64B-15JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	400 mA	8192 words	5			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm		10 ms	65536 bit	4.5 V			e3	40	245	.0001 Amp	13.97 mm	150 ns	5
AT28LV010-20TU	Microchip Technology	EEPROM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	EEPROMs	10	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	NO	MATTE TIN	DUAL	1		R-PDSO-G32	3	3.465 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	10 ms	1048576 bit	3.135 V		128	e3			.00005 Amp	18.4 mm	200 ns	3.3	YES
AT28HC256-90JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e3	40	245	.0003 Amp	13.97 mm	90 ns	5	YES
AT28C256-15LM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD	QUAD			R-CQCC-N32		5.5 V	2.54 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	13.97 mm	150 ns	5	YES
X28HC256JIZ-12T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	120 ns	5
AT28C256E-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN	QUAD		HARDWARE/SOFTWARE	R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e3	40	245	.0002 Amp	13.97 mm	150 ns	5	YES
X28HC256JIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	120 ns	5
AT28HC64B-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES		8	SMALL OUTLINE	SOP8,.16		10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO		DUAL	1		R-PDSO-G32		5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm		10 ms	65536 bit	4.5 V		64				.0001 Amp	13.97 mm	120 ns	5	YES
AT28LV010-20JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm		10 ms	1048576 bit	3.135 V			e3			.00005 Amp	13.97 mm	200 ns	3
X28HC256JIZ-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
X28HC256JIZ-90T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
AT28HC256-12LM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD	QUAD			R-CQCC-N32	1	5.5 V	2.54 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	13.97 mm	120 ns	5	YES
AT28LV010-20JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15000 mA	131072 words	3.3	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN	QUAD	1		R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm		10 ms	1048576 bit	3.135 V		128	e3			.00005 Amp	13.97 mm	200 ns	3.3	YES
AT28LV010-20JU-630	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm		10 ms	1048576 bit	3.135 V			e3			.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20JU-319	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	3.465 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm		10 ms	1048576 bit	3.135 V			e3	40	245	.00005 Amp	13.97 mm	200 ns	3
AT28C010-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN	QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128	e3	40	245	.0002 Amp	13.97 mm	120 ns	5	YES
AT28C256F-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN	QUAD		HARDWARE/SOFTWARE	R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	3 ms	262144 bit	4.5 V		64	e3	40	245	.0002 Amp	13.97 mm	150 ns	5	YES
AT28C010E-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	NO	MATTE TIN	QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	1048576 bit	4.5 V	AUTOMATIC WRITE	128	e3	40	245	.0002 Amp	13.97 mm	120 ns	5	YES
AT28LV010-20JU-051	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words	3.3			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel			QUAD			R-PQCC-J32		3.465 V	3.556 mm		11.43 mm		10 ms	1048576 bit	3.135 V				NOT SPECIFIED	NOT SPECIFIED		13.97 mm	200 ns	3
X28HC256JI-12	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel			QUAD			R-PQCC-J32		5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V							13.97 mm	120 ns	5
X28HC256JI-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel			QUAD			R-PQCC-J32		5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V							13.97 mm	150 ns	5
AT28BV64B-20JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	8192 words		YES	3.3	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN	QUAD	1		R-PQCC-J32	3	3.6 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	65536 bit	2.7 V		64	e3	40	245	.00005 Amp	13.97 mm	200 ns		YES
AT28LV010-20TU-319	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3			8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		10	.5 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles	8 mm		10 ms	1048576 bit	3.135 V			e3			.00005 Amp	18.4 mm	200 ns	3
AT28HC64BF-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN	QUAD	1		R-PQCC-J32	1	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	2 ms	65536 bit	4.5 V		64	e3	30	245	.0001 Amp	13.97 mm	120 ns	5	YES
AT28C010-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32		5.5 V	3.556 mm		11.43 mm		10 ms	1048576 bit	4.5 V			e3				13.97 mm	120 ns	5
AT28LV010-20TU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15000 mA	131072 words	3.3	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		10	.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN	DUAL	1		R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles	8 mm		10 ms	1048576 bit	3.135 V		128	e3			.00005 Amp	18.4 mm	200 ns	3.3	YES
X28HC256J-15	Intersil	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0			.0005 Amp	13.97 mm	150 ns	5	YES
AT28HC256E-90JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e3	40	245	.0003 Amp	13.97 mm	90 ns	5	YES
AT28C010E-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN	QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128	e3		245	.0002 Amp	13.97 mm	150 ns	5	YES
AT28HC256E-70JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e3	40	245		13.97 mm	70 ns	5	YES
AT28LV010-20TU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3			8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		10	.5 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles	8 mm		10 ms	1048576 bit	3.135 V			e3			.00005 Amp	18.4 mm	200 ns	3
AT28BV64B-20JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	3	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO		QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.6 V	3.556 mm	10000 Write/Erase Cycles	11.43 mm		10 ms	65536 bit	2.7 V		64				.00005 Amp	13.97 mm	200 ns	3	YES
X28HC256JI-90T1	Intersil	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0			.0005 Amp	13.97 mm	90 ns	5	YES
X28C256J-25	Xicor	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	PAGE WRITE	64	e0			.0005 Amp	13.97 mm	250 ns	5	YES
AT28HC256E-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e3	40	245	.0003 Amp	13.97 mm	120 ns	5	YES
X28HC64JI-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel			QUAD			R-PQCC-J32		5.5 V	3.55 mm		11.43 mm		5 ms	65536 bit	4.5 V							13.97 mm	90 ns	5
AT28C010-12EM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	NO	TIN LEAD	QUAD			R-CQCC-N32		5.5 V	2.54 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	1048576 bit	4.5 V	AUTOMATIC WRITE; DATA RETENTION: 10 YEARS	128	e0			.0003 Amp	13.97 mm	120 ns	5	YES
AT28HC64B-90JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN	QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V		64	e3	40	245	.0001 Amp	13.97 mm	90 ns	5	YES
AT28C010-12JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel			DUAL			R-PDSO-G32		5.5 V	3.556 mm		11.43 mm		10 ms	1048576 bit	4.5 V							13.97 mm	120 ns	5
AT28C010E-12EM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	NO	TIN LEAD	QUAD	1	HARDWARE/SOFTWARE	R-CQCC-N32		5.5 V	2.54 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128	e0			.0003 Amp	13.97 mm	120 ns	5	YES
AT28C010E-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32		5.5 V	3.556 mm		11.43 mm		10 ms	1048576 bit	4.5 V			e3				13.97 mm	120 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.