32 EEPROM 2,047

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28LV010-20TU-630	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		10	.5 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms	1048576 bit	3.135 V			e3			.00005 Amp	18.4 mm	200 ns	3
AT28LV010-20TUSL319	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs		.5 mm	85 Cel			128KX8	128K	-40 Cel	NO	MATTE TIN	DUAL			R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms	1048576 bit	3.135 V		128	e3			.00005 Amp	18.4 mm	200 ns	3	YES
AT28HC256F-90JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	3 ms	262144 bit	4.5 V		64	e3	40	245	.0003 Amp	13.97 mm	90 ns	5	YES
X28HC256J-12T1	Intersil	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel			32KX8	32K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0			.0005 Amp	13.97 mm	120 ns	5	YES
AT28C010-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel			128KX8	128K	-40 Cel	NO	MATTE TIN	QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128	e3	40	245	.0002 Amp	13.97 mm	150 ns	5	YES
X28HC256J-90	Intersil	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel			32KX8	32K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0			.0005 Amp	13.97 mm	90 ns	5	YES
AT28BV256-20JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	2	3.6 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	2.7 V		64	e3	40	245	.00005 Amp	13.97 mm	200 ns	3	YES
X28HC256JI-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel			QUAD			R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms	262144 bit	4.5 V							13.97 mm	90 ns	5
AT28BV256-20JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES		8	CHIP CARRIER	LCC32,.45X.55			1.27 mm	85 Cel			32KX8	32K	-40 Cel			QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.6 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm		10 ms	262144 bit	2.7 V	THE PART EXISTS IN EEPROM3V	64				.00005 Amp	13.97 mm	200 ns	3
AT28HC256E-90JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		Matte Tin (Sn)	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm		10 ms	262144 bit	4.5 V	AUTOMATIC WRITE		e3	40	245		13.97 mm	90 ns	5
AT28C010E-12JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5			8	SMALL OUTLINE				1.27 mm	85 Cel			128KX8	128K	-40 Cel			DUAL			R-PDSO-G32		5.5 V	3.556 mm			11.43 mm		10 ms	1048576 bit	4.5 V							13.97 mm	120 ns	5
AT28C010-12TU	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs		.5 mm	85 Cel			128KX8	128K	-40 Cel	NO	MATTE TIN	DUAL			R-PDSO-G32	3	5.5 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128	e3			.0002 Amp	18.4 mm	120 ns	5	YES
AT28C16-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	1 ms	16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0		225	.0001 Amp	13.97 mm	200 ns	5	YES
AT28C16-20JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	2048 words		5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel		3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	1 ms	16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0		225	.0001 Amp	13.97 mm	200 ns	5	YES
AT28HC256-70JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e3	40	245		13.97 mm	70 ns	5	YES
X28HC256JI-12T1	Intersil	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0			.0005 Amp	13.97 mm	120 ns	5	YES
AT28C64B-15JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		3-STATE	8KX8	8K	0 Cel	NO	Tin/Lead (Sn/Pb)	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0	30	225	.0001 Amp	13.97 mm	150 ns	5	YES
AT28HC256E-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm			262144 bit	4.5 V			e3	40	245		13.97 mm	120 ns	5
AT28HC64BF-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES		8	SMALL OUTLINE	SOP8,.16		10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN	DUAL	1		R-PDSO-G32	1	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	65536 bit	4.5 V		64	e3	30	245	.0001 Amp	13.97 mm	120 ns	5	YES
AT28C256E-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm			262144 bit	4.5 V			e3	40	245		13.97 mm	150 ns	5
AT28C64B-20JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	Tin/Lead (Sn/Pb)	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0	30	225	.0001 Amp	13.97 mm	200 ns	5	YES
X28HC64JIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5			8	CHIP CARRIER				1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms	65536 bit	4.5 V			e3	30	245		13.97 mm	120 ns	5
X28HC64JIZ-12T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel			8KX8	8K	-40 Cel	NO	MATTE TIN	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e3	30	245	.0002 Amp	13.97 mm	120 ns	5	YES
AT28C010E-15TI	Atmel	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs		.5 mm	85 Cel		3-STATE	128KX8	128K	-40 Cel	NO	TIN LEAD	DUAL			R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms	1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0		240	.0002 Amp	18.4 mm	150 ns	5	YES
AT28C64B-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225	.0001 Amp	13.97 mm	200 ns	5	YES
AT28LV256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	3.465 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	3.135 V	AUTOMATIC WRITE	64	e0		225	.00002 Amp	13.97 mm	200 ns	3	YES
5962-3826707MZA	Microchip Technology	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	131072 words		5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	125 Cel			128KX8	128K	-55 Cel	NO		DUAL			R-XDFP-F32		5.5 V	3.048 mm	10000 Write/Erase Cycles		11.6586 mm	Not Qualified	10 ms	1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0	NOT SPECIFIED	NOT SPECIFIED	.00085 Amp	20.85 mm	120 ns	5	YES
AT28BV64B-25JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	8192 words		3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel			8KX8	8K	0 Cel	NO	Tin/Lead (Sn/Pb)	QUAD			R-PQCC-J32	2	3.6 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	2.7 V	100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS	64	e0	30	225	.00002 Amp	13.97 mm	250 ns	3	YES
AT28C256-15JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0002 Amp	13.97 mm	150 ns	5	YES
AT28C256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0002 Amp	13.97 mm	200 ns	5	YES
AT28C256E-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0002 Amp	13.97 mm	200 ns	5	YES
AT28C64B-25JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225	.0001 Amp	13.97 mm	250 ns	5	YES
AT28HC256-12JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0003 Amp	13.97 mm	120 ns	5	YES
AT28HC64B-55JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225	.04 Amp	13.97 mm	55 ns	5	YES
AT28LV64B-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	8192 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	3.63 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	2.97 V	AUTOMATIC WRITE	64	e0		225	.00002 Amp	13.97 mm	200 ns	3	YES
EPC1064TC32	Altera	CONFIGURATION MEMORY	COMMERCIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	MOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words	COMMON	5		5	1	FLATPACK, LOW PROFILE	TQFP32,.35SQ,32	OTP ROMs		.8 mm	70 Cel		3-STATE	64KX1	64K	0 Cel		TIN LEAD	QUAD			S-PQFP-G32	3	5.25 V	1.27 mm		4 MHz	7 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES		e0		220		7 mm
TC584000P	Toshiba	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5			8	IN-LINE				2.54 mm	70 Cel			512KX8	512K	0 Cel		TIN LEAD	DUAL			R-PDIP-T32		5.25 V	4.8 mm			15.24 mm	Not Qualified		4194304 bit	4.75 V	BULK ERASE; BLOCK ERASE		e0				42 mm	15000 ns	5
X28C010DMB-12	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		5	YES		8	IN-LINE	DIP32,.6		100	2.54 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel			DUAL			R-CDIP-T32		5.5 V	5.92 mm	100000 Write/Erase Cycles		15.24 mm		10 ms	1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	42.95 mm	120 ns	5	YES
X28HC256JIZ-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	150 ns	5
X28HC64JIZ-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5			8	CHIP CARRIER				1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms	65536 bit	4.5 V			e3	30	245		13.97 mm	90 ns	5
AT28C010-12DM/883	Microchip Technology	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5			8	IN-LINE				2.54 mm	125 Cel			128KX8	128K	-55 Cel			DUAL			R-GDIP-T32		5.5 V	5.72 mm			15.24 mm		10 ms	1048576 bit	4.5 V							42.2 mm	120 ns	5
AT28C010-12FM/883	Microchip Technology	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		5	YES	5	8	FLATPACK	FL32,.5	EEPROMs	10	1.27 mm	125 Cel		3-STATE	128KX8	128K	-55 Cel	NO	TIN LEAD	DUAL			R-CDFP-F32		5.5 V	3.05 mm	10000 Write/Erase Cycles		12.2 mm	Not Qualified	10 ms	1048576 bit	4.5 V	AUTOMATIC WRITE; DATA RETENTION: 10 YEARS	128	e0			.0003 Amp	20.85 mm	120 ns	5	YES
AT28C010-15DM/883	Microchip Technology	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		5	YES		8	IN-LINE	DIP32,.6		10	2.54 mm	125 Cel			128KX8	128K	-55 Cel	NO		DUAL		HARDWARE/SOFTWARE	R-GDIP-T32		5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm		10 ms	1048576 bit	4.5 V		128				.0003 Amp	42.2 mm	150 ns	5	YES
AT28C010E-12FM/883	Microchip Technology	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		5	YES		8	FLATPACK			10	1.27 mm	125 Cel		3-STATE	128KX8	128K	-55 Cel	NO		DUAL	1	HARDWARE/SOFTWARE	R-CDFP-F32		5.5 V	3.05 mm	100000 Write/Erase Cycles		12.15 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128				.0003 Amp	20.8 mm	120 ns	5	YES
AT28HC64B-70JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN	QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V		64	e3	40	245	.0001 Amp	13.97 mm	70 ns	5	YES
LE28C1001DT-90	Onsemi	EEPROM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		50 mA	131072 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	EEPROMs		.5 mm	70 Cel			128KX8	128K	0 Cel	NO		DUAL			R-PDSO-G32				10000 Write/Erase Cycles			Not Qualified	10 ms	1048576 bit			128				.003 Amp		90 ns		YES
CAT28C65BFT14I-12TE13	Onsemi	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			8KX8	8K	-40 Cel		TIN LEAD	DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified		65536 bit	4.5 V			e0				12.4 mm	120 ns	5
CAT28C256HT14I-15TE13	Onsemi	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			32KX8	32K	-40 Cel		TIN LEAD	DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified		262144 bit	4.5 V			e0				12.4 mm	150 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.