44 EEPROM 242

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
XC17V16VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3		3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified		16777216 bit	3 V			e0	30	240		.001 Amp	10 mm
XC18V04VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		512KX8	512K	-40 Cel		TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified		4194304 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04VQ44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3			8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		512KX8	512K	-40 Cel		TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified		4194304 bit	3 V			e0					10 mm	20 ns
XC1704LPC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	4194304 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm		15 MHz	16.5862 mm	Not Qualified		4194304 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	16.5862 mm
XC18V01VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		128KX8	128K	-40 Cel		Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified		1048576 bit	3 V			e3	30	260	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V04VQ44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3			8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		512KX8	512K	-40 Cel		TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified		4194304 bit	3 V			e0					10 mm	20 ns
XC18V01VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		128KX8	128K	-40 Cel		TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified		1048576 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V01VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		128KX8	128K	-40 Cel		Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified		1048576 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V04VQ44C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3			8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		512KX8	512K	-40 Cel			QUAD	S-PQFP-G44		3.6 V	1.2 mm			10 mm	Not Qualified		4194304 bit	3 V								10 mm	20 ns
XC18V02VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		256KX8	256K	-40 Cel		TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified		2097152 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V02PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel		Matte Tin (Sn)	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified		2097152 bit	3 V			e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
AT28C040-20LI	Atmel	EEPROM	INDUSTRIAL	44	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		5	YES	5	8	CHIP CARRIER	LCC44,.65SQ	EEPROMs		1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	NO	TIN LEAD	QUAD	S-CQCC-N44	1	5.5 V	2.74 mm			16.55 mm	Not Qualified	10 ms	4194304 bit	4.5 V	AUTOMATIC WRITE	256	e0				.003 Amp	16.55 mm	200 ns	5	YES
XC18V02VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		256KX8	256K	-40 Cel		Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified		2097152 bit	3 V			e3	30	260	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04PC44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		TIN LEAD	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified		4194304 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V04VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		512KX8	512K	-40 Cel		Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified		4194304 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		512KX8	512K	-40 Cel		Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified		4194304 bit	3 V			e3	30	260	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04VQG44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3			8	FLATPACK					85 Cel		512KX8	512K	-40 Cel		MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V			33 MHz				4194304 bit	3 V			e3	30	260
M27C1024-90XC7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		80 ns	2.7
M27C1024-15C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-15C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-55C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		55 ns	2.7
M27C1024-55XC1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		55 ns	2.7
M27C1024-35XC7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		35 ns	2.7
M27C1024-20XC7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-20C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-35C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		35 ns	2.7
M27C1024-35C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		35 ns	2.7
M27C1024-70XC6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		70 ns	2.7
M27C1024-10C7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-15XC1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-15C7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-70XC1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		70 ns	2.7
M27C1024-10XC7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-80C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		80 ns	2.7
M27C1024-20C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-15C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-70C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		70 ns	2.7
M27C1024-10C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-45C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		45 ns	2.7
M27C1024-80XC6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		80 ns	2.7
M27C1024-20XC3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-45XC1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		45 ns	2.7
M27C1024-10C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-55XC3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		55 ns	2.7
M27C1024-80C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		80 ns	2.7
M27C1024-55C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		55 ns	2.7
M27C1024-12XC1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		100 ns	2.7
M27C1024-55XC7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN	QUAD	S-PQCC-J44									1048576 bit				e3				.0001 Amp		55 ns	2.7

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.