5 EEPROM 629

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M24C64-RCS6G/KF	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM		R-PBGA-B5		5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		1.073 mm
M24C64-WMH6P	STMicroelectronics	EEPROM	INDUSTRIAL	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	SYNCHRONOUS		8192 words				8	CHIP CARRIER, VERY THIN PROFILE					85 Cel	8KX8	8K	-40 Cel			BOTTOM		R-XBCC-B5		5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	65536 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		1.7 mm
M24C64-RCS6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	8192 words			2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA5,3X3,14/8	EEPROMs	40	.2 mm	85 Cel	8KX8	8K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B5		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	.959 mm	Not Qualified		I2C	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.073 mm
DS25LV02R+T&R	Maxim Integrated	EEPROM	OTHER	5	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	2.5	2.5/5	8	SMALL OUTLINE	TSOP5/6,.11,37	Other Memory ICs		.95 mm	85 Cel	128X8	128	-30 Cel	MATTE TIN		DUAL		R-PDSO-G5	1	5.5 V					Not Qualified		1-WIRE	1024 bit	2.2 V	e3					15000 ns
DS1972-F5#	Maxim Integrated	EEPROM	INDUSTRIAL	5		ROUND	METAL	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS		256 words			3/5	4	CYLINDRICAL	BUTTON,.68IN	EEPROMs	10		85 Cel	256X4	256	-40 Cel	MATTE TIN		BOTTOM		O-MBCY-W5		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	e3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.