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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TC581282AXB	Toshiba	EEPROM	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	30 mA	16777216 words	3.3	NO	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32		Flash Memories	.8 mm	85 Cel	16MX8	16M	-40 Cel	1K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm	7 mm	Not Qualified		134217728 bit	2.7 V	512	e0		NAND TYPE	.0001 Amp	10 mm		35 ns	3	NO
TC58DVM82A1XBJ1	Toshiba	EEPROM	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	16K	30 mA	33554432 words	3.3	NO	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32		Flash Memories	.8 mm	85 Cel	32MX8	32M	-40 Cel	2K	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm	7 mm	Not Qualified		268435456 bit	2.7 V	512	e0		NAND TYPE	.00005 Amp	10 mm		35 ns	3	NO
K8P2716UZC-QI4ET	Samsung	EEPROM CARD	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G56	1				Not Qualified		134217728 bit		8/16	e6	260	NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES
K8P2815UQC-QI4BT	Samsung	EEPROM CARD	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified	BOTTOM/TOP	134217728 bit		8	e3	260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
K8P2716UZC-QC4ET	Samsung	EEPROM CARD	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified		134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES
K8P2716UZC-QI4CT	Samsung	EEPROM CARD	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G56	1				Not Qualified		134217728 bit		8/16	e6	260	NOR TYPE	.00004 Amp		YES	65 ns	2.7	YES
K8P2716UZC-QC4CT	Samsung	EEPROM CARD	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified		134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	65 ns	2.7	YES
K8P2716UZC-QE4CT	Samsung	EEPROM CARD	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified		134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	65 ns	2.7	YES
K8P2716UZC-QC4DT	Samsung	EEPROM CARD	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified		134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	70 ns	2.7	YES
K8P2815UQC-QE4DT	Samsung	EEPROM CARD	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified	BOTTOM/TOP	134217728 bit		8	e3	260	NOR TYPE	.00003 Amp		YES	70 ns	2.7	YES
K8P2815UQC-QE4CT	Samsung	EEPROM CARD	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified	BOTTOM/TOP	134217728 bit		8	e3	260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
K8P2815UQC-QE4BT	Samsung	EEPROM CARD	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified	BOTTOM/TOP	134217728 bit		8	e3	260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
K8P5615UQA-PE4DT	Samsung	EEPROM CARD	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K,128K	50 mA	16777216 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel	16MX16	16M	-25 Cel	8,126	YES		YES	DUAL	R-PDSO-G56	3				Not Qualified	BOTTOM/TOP	268435456 bit				260	NOR TYPE	.00006 Amp		YES	70 ns	2.7	YES
K8P5516UZB-PE4ET	Samsung	EEPROM CARD	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	16777216 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	16MX16	16M	-25 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified	BOTTOM/TOP	268435456 bit		8/16	e3		NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES
K8P2716UZC-QE4DT	Samsung	EEPROM CARD	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified		134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	70 ns	2.7	YES
K8P5615UQA-PI4DT	Samsung	EEPROM CARD	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K,128K	50 mA	16777216 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel	16MX16	16M	-40 Cel	8,126	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G56	3				Not Qualified	BOTTOM/TOP	268435456 bit			e6	260	NOR TYPE	.00006 Amp		YES	70 ns	2.7	YES
K8P2815UQC-QI4DT	Samsung	EEPROM CARD	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified	BOTTOM/TOP	134217728 bit		8	e3	260	NOR TYPE	.00003 Amp		YES	70 ns	2.7	YES
K8P2815UQC-QI4CT	Samsung	EEPROM CARD	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified	BOTTOM/TOP	134217728 bit		8	e3	260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
K8P2716UZC-QI4DT	Samsung	EEPROM CARD	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G56	1				Not Qualified		134217728 bit		8/16	e6	260	NOR TYPE	.00004 Amp		YES	70 ns	2.7	YES
K8P5516UZB-PI4ET	Samsung	EEPROM CARD	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	16777216 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G56	1				Not Qualified	BOTTOM/TOP	268435456 bit		8/16	e6	260	NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES
K8P2716UZC-QE4ET	Samsung	EEPROM CARD	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	1				Not Qualified		134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.