64 EEPROM 191

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Parallel or Serial	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Boot Block	Memory Density	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S1015EZC-DE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES	MATTE TIN		BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8P2716UZC-JE4DT	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1	Not Qualified		134217728 bit	8/16	e3	260	NOR TYPE	.00004 Amp	YES	70 ns	2.7	YES
K8S1315EBC-DC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	BOTTOM	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1115ETC-FE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315EBC-FC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	BOTTOM	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215EZC-FC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES			BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1115ETC-FE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215EBC-FC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	BOTTOM	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315EZC-SC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES	MATTE TIN		BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215EBC-SE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	BOTTOM	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1015ETC-DE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1015ETC-FE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315EZC-FE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES			BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8P2716UZC-JI4DT	Samsung	EEPROM CARD	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1	Not Qualified		134217728 bit	8/16	e3	260	NOR TYPE	.00004 Amp	YES	70 ns	2.7	YES
K8S1315EBC-FC1FT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	BOTTOM	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215EZC-DC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES	MATTE TIN		BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1115EZC-FC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES			BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1015EZC-DC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES	MATTE TIN		BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315ETC-DE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315EZC-FC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES			BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8P2716UZC-JC4DT	Samsung	EEPROM CARD	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1	Not Qualified		134217728 bit	8/16	e3	260	NOR TYPE	.00004 Amp	YES	70 ns	2.7	YES
K8S1215ETC-FC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315ETC-FE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1115EZC-FC1FT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES			BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1115ETC-DE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit		e3	260	NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315EZC-DE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES	MATTE TIN		BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215EZC-FC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES			BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215ETC-DC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8P2716UZC-JE4CT	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1	Not Qualified		134217728 bit	8/16	e3	260	NOR TYPE	.00004 Amp	YES	65 ns	2.7	YES
K8P5516UZB-EE4ET	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	55 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-25 Cel	256	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1	Not Qualified		268435456 bit	8/16	e3		NOR TYPE	.00004 Amp	YES	80 ns	2.7	YES
K8S1215ETC-SE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215ETC-SC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215EBC-FE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	BOTTOM	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315EBC-FE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	BOTTOM	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8P2815UQC-JI4BT	Samsung	EEPROM CARD	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1	Not Qualified	BOTTOM/TOP	134217728 bit	8	e3	260	NOR TYPE	.00003 Amp	YES	65 ns	2.7	YES
K8S1115EBC-SE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	BOTTOM	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8P2815UQC-JE4DT	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1	Not Qualified	BOTTOM/TOP	134217728 bit	8	e3	260	NOR TYPE	.00003 Amp	YES	70 ns	2.7	YES
K8S1115EZC-DC1FT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES	MATTE TIN		BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315ETC-DC1FT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1015ETC-FC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1015EBC-FE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	BOTTOM	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315EZC-FC1FT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES			BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1015EZC-DC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES	MATTE TIN		BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1015ETC-SC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215ETC-DE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1015EZC-SC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES	MATTE TIN		BOTTOM	R-PBGA-B64	1	Not Qualified		536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1115EBC-DE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1	Not Qualified	BOTTOM	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1015ETC-FE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	Not Qualified	TOP	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.