64 EEPROM 191

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL128S11FHIV20	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL128S11FHIV23	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL256S11FHIV23	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		268435456 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL256S11FHIV13	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		268435456 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL01GS12FHIV10	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL128S10FHI013	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL01GS11FHI013	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL512S12FHIV10	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL01GS12FHIV13	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL128S11FHIV10	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL01GS11FHI023	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL256S11FHIV20	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		268435456 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL512S11FHI013	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL512S12FHIV23	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL128S10FHI023	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL128S10FHI010	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL256S11FHIV10	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		268435456 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL128S11FHIV13	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL01GS12FHIV23	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL512S12FHIV13	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL512S11FHI023	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL01GS12FHIV20	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL01GS11FHI020	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL256S10FHI013	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		268435456 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL128S10FHI020	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL256S10FHI020	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		268435456 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL256S10FHI023	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		268435456 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL512S11FHI010	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL512S11FHI020	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL512S12FHIV20	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
K8S1215ETC-FE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1				Not Qualified	TOP	536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1015ETC-DC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1				Not Qualified	TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1215ETC-SC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1				Not Qualified	TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1215ETC-DC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1				Not Qualified	TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1315ETC-SE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1				Not Qualified	TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115EZC-SE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES	MATTE TIN		BOTTOM	R-PBGA-B64	1				Not Qualified		536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1315EBC-DE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1				Not Qualified	BOTTOM	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115ETC-SC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1				Not Qualified	TOP	536870912 bit			e3		260	NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115EZC-FE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES			BOTTOM	R-PBGA-B64	1				Not Qualified		536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115EBC-DE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1				Not Qualified	BOTTOM	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1015EZC-FC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES			BOTTOM	R-PBGA-B64	1				Not Qualified		536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1015EBC-DE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1				Not Qualified	BOTTOM	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1015ETC-SC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1				Not Qualified	TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1315EBC-DC1FT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1				Not Qualified	BOTTOM	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8P2716UZC-JI4CT	Samsung	EEPROM CARD	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified		134217728 bit		8/16	e3		260	NOR TYPE	.00004 Amp		YES	65 ns	2.7	YES
K8S1115EBC-SC1FT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1				Not Qualified	BOTTOM	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115ETC-SE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B64	1				Not Qualified	TOP	536870912 bit			e3		260	NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8P2716UZC-JE4ET	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified		134217728 bit		8/16	e3		260	NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.