67 EEPROM 11

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TH58NVG3S0HBAI6	Toshiba	EEPROM	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	1GX8	1G	-40 Cel					BOTTOM	R-PBGA-B67		3.6 V	1 mm	6.5 mm		8589934592 bit	2.7 V						8 mm		3
TC58DVG02D5BAI6	Toshiba	EEPROM	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B67		3.6 V	1 mm	6.5 mm		1073741824 bit	2.7 V						8 mm		3
TC58NVM9S3EBAI6	Toshiba	EEPROM	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	67108864 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA69,10X12,32	Flash Memories	.8 mm	85 Cel	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B67		3.6 V	1 mm	6.5 mm	Not Qualified	536870912 bit	2.7 V	2K			NAND TYPE	.00005 Amp	8 mm	25 ns	3	NO
TC58DYG02D5BAI6	Toshiba	EEPROM	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B67		1.95 V	1 mm	6.5 mm	Not Qualified	1073741824 bit	1.7 V	2K			NAND TYPE	.00005 Amp	8 mm	25 ns	3	NO
TH58NYG3S0HBAI6	Toshiba	EEPROM	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	1GX8	1G	-40 Cel					BOTTOM	R-PBGA-B67		1.95 V	1 mm	6.5 mm		8589934592 bit	1.7 V						8 mm		3
KFM5616Q1A-DEB6	Samsung	EEPROM CARD	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	40 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B67	1				Not Qualified	262144 bit		512	e3		NAND TYPE	.00005 Amp		11.5 ns	2.7	NO
KFG1216Q2B-SEB6T	Samsung	EEPROM CARD	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES		YES	BOTTOM	R-PBGA-B67	3				Not Qualified	536870912 bit		1K		260	NAND TYPE	.00005 Amp		11 ns	2.7	NO
KFG2816U1M-DIB	Samsung	EEPROM CARD	INDUSTRIAL	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	30 mA	8388608 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	256	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B67	1				Not Qualified	134217728 bit		512	e3		NAND TYPE	.00005 Amp		14.5 ns	2.7	NO
KFG1216Q2B-SEB8T	Samsung	EEPROM CARD	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES		YES	BOTTOM	R-PBGA-B67	3				Not Qualified	536870912 bit		1K		260	NAND TYPE	.00005 Amp		9 ns	2.7	NO
KFM5616Q1A-DEB5	Samsung	EEPROM CARD	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	40 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B67	1				Not Qualified	268435456 bit		512	e3		NAND TYPE	.00005 Amp		14.5 ns	2.7	NO
KFG2816Q1M-DEB	Samsung	EEPROM CARD	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	25 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-30 Cel	256	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B67	1				Not Qualified	134217728 bit		512	e3		NAND TYPE	.00005 Amp		14.5 ns	2.7	NO

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.