BGA EEPROM 67

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
DS2433X-Z01	Maxim Integrated	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		512 words	5		8	GRID ARRAY						85 Cel			512X8	512	-40 Cel		TIN LEAD		BOTTOM			R-PBGA-B6		6 V	.864 mm			1.91 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e0				2.85 mm
M95M01-RCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		5 mA	131072 words		2/5	8	GRID ARRAY	BGA8,3X3,47/24		EEPROMs	40	.6 mm	85 Cel			128KX8	128K	-40 Cel				BOTTOM		HARDWARE/SOFTWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		SPI	1048576 bit						.000003 Amp
DS2431X+U	Analog Devices	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		256 words	3.3	3/5	4	GRID ARRAY	BGA6,2X3,40/20		EEPROMs	40	.5 mm	85 Cel	NO	OPEN-DRAIN	256X4	256	-40 Cel	NO	TIN SILVER COPPER NICKEL		BOTTOM		HARDWARE	R-PBGA-B6	1	5.25 V	.98 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e2	30	260		1.68 mm		NO
EPCQL1024F24IN	Infineon Technologies	CONFIGURATION MEMORY	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		1073741824 words	1.8		1	GRID ARRAY						85 Cel			1GX1	1G	-40 Cel				BOTTOM			R-PBGA-B24		2 V			100 MHz					1073741824 bit	1.7 V
LE25LA642CS	Onsemi	EEPROM	INDUSTRIAL	8	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		3 mA	8192 words		2/3.3	8	GRID ARRAY	BGA8,2X4(UNSPEC)		EEPROMs	20		85 Cel			8KX8	8K	-40 Cel				BOTTOM		HARDWARE/SOFTWARE					100000 Write/Erase Cycles			Not Qualified		SPI	65536 bit						.000002 Amp
LE25LB642CT	Onsemi	EEPROM	INDUSTRIAL	8	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		3 mA	8192 words		2/3.3	8	GRID ARRAY	BGA8,2X4(UNSPEC)		EEPROMs	20		85 Cel			8KX8	8K	-40 Cel				BOTTOM		HARDWARE/SOFTWARE					100000 Write/Erase Cycles			Not Qualified		SPI	65536 bit						.000002 Amp
LE24LA322CS-TL2	Onsemi	EEPROM	INDUSTRIAL	6	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		3 mA	4096 words		2/3.3	8	GRID ARRAY	BGA6(UNSPEC)		EEPROMs	10		85 Cel			4KX8	4K	-40 Cel			1010000R	BOTTOM		HARDWARE					100000 Write/Erase Cycles			Not Qualified		I2C	32768 bit						.000002 Amp
LE24L042CS-LV	Onsemi	EEPROM	INDUSTRIAL	4	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		3 mA	512 words		1.8/3.3	8	GRID ARRAY	BGA4(UNSPEC)		EEPROMs	20		85 Cel			512X8	512	-40 Cel			1010000R	BOTTOM							100000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000002 Amp
LE24LA162CB	Onsemi	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words	2.5		8	GRID ARRAY						85 Cel			2KX8	2K	-40 Cel				BOTTOM			R-PBGA-B6		3.6 V			.4 MHz			10 ms	I2C	16384 bit	1.7 V
LE24LB642CS	Onsemi	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5	2/3.3	8	GRID ARRAY	BGA6(UNSPEC)		EEPROMs	10		85 Cel			8KX8	8K	-40 Cel			1010000R	BOTTOM		HARDWARE	R-PBGA-B6		3.6 V		100000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	65536 bit	1.7 V					.000002 Amp
LE24LA322CS	Onsemi	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5	2/3.3	8	GRID ARRAY	BGA6(UNSPEC)		EEPROMs	10		85 Cel			4KX8	4K	-40 Cel			1010000R	BOTTOM		HARDWARE	R-PBGA-B6		3.6 V		100000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	32768 bit	1.7 V					.000002 Amp
LE24L322CS	Onsemi	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5	2/3.3	8	GRID ARRAY	BGA8,2X4(UNSPEC)		EEPROMs	10		85 Cel			4KX8	4K	-40 Cel			1010000R	BOTTOM		HARDWARE	R-PBGA-B8		5.5 V		100000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	32768 bit	1.8 V					.000002 Amp
LE24LB642CS-TL	Onsemi	EEPROM	INDUSTRIAL	6	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		3 mA	8192 words		2/3.3	8	GRID ARRAY	BGA6(UNSPEC)		EEPROMs	10		85 Cel			8KX8	8K	-40 Cel			1010000R	BOTTOM		HARDWARE					100000 Write/Erase Cycles			Not Qualified		I2C	65536 bit						.000002 Amp
LE24L042CS	Onsemi	EEPROM	INDUSTRIAL	4	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5	1.8/3.3	8	GRID ARRAY	BGA4(UNSPEC)		EEPROMs	20		85 Cel			512X8	512	-40 Cel			1010000R	BOTTOM			R-PBGA-B4		3.6 V		100000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	4096 bit	1.7 V					.000002 Amp
LE24L043CB	Onsemi	EEPROM	OTHER	5	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5	1.8/3.3	8	GRID ARRAY	BGA5,3X3,17/10		EEPROMs	20	.254 mm	85 Cel			512X8	512	-20 Cel			101000MR	BOTTOM		HARDWARE	R-PBGA-B5		3.6 V		100000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	4096 bit	1.7 V					.000002 Amp
M24128-BFCT6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		1.8/5	8	GRID ARRAY	BGA8,3X5,14/8		EEPROMs	200		85 Cel			16KX8	16K	-40 Cel			1010DDDR	BOTTOM		HARDWARE	R-PBGA-B8		5.5 V		4000000 Write/Erase Cycles	1 MHz		Not Qualified	5 ms	I2C	131072 bit	1.7 V					.000001 Amp
M24128-BWCT6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words			8	GRID ARRAY						85 Cel			16KX8	16K	-40 Cel				BOTTOM			R-PBGA-B8		5.5 V			1 MHz			5 ms	I2C	131072 bit	2.5 V
M95M01-RCS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		5 mA	131072 words		2/5	8	GRID ARRAY	BGA8,3X3,47/24		EEPROMs	40	.6 mm	85 Cel			128KX8	128K	-40 Cel				BOTTOM		HARDWARE/SOFTWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		SPI	1048576 bit						.000003 Amp
M24512-RCS6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words	5	2/5	8	GRID ARRAY	BGA8,3X5,17/10	1	EEPROMs	200	.254 mm	85 Cel			64KX8	64K	-40 Cel			1010DDDR	BOTTOM		HARDWARE	R-PBGA-B8		5.5 V		4000000 Write/Erase Cycles	.4 MHz	1.289 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.955 mm	5
M24128-DFCT6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words			8	GRID ARRAY						85 Cel			16KX8	16K	-40 Cel				BOTTOM			R-PBGA-B8		5.5 V			1 MHz			5 ms	I2C	131072 bit	1.7 V
M24128-BRCT6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words			8	GRID ARRAY						85 Cel			16KX8	16K	-40 Cel				BOTTOM			R-PBGA-B8		5.5 V			1 MHz			5 ms	I2C	131072 bit	1.8 V
M24M01-RCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		5 mA	131072 words		2/5	8	GRID ARRAY	BGA8,3X3,47/24		EEPROMs	40	.6 mm	85 Cel			128KX8	128K	-40 Cel			1010DDMR	BOTTOM		HARDWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		I2C	1048576 bit						.000001 Amp
M95M01-RCS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		5 mA	131072 words		2/5	8	GRID ARRAY	BGA8,3X3,47/24		EEPROMs	40	.6 mm	85 Cel			128KX8	128K	-40 Cel				BOTTOM		HARDWARE/SOFTWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		SPI	1048576 bit						.000003 Amp
M24128-BFCT6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		1.8/5	8	GRID ARRAY	BGA8,3X5,14/8		EEPROMs	200		85 Cel			16KX8	16K	-40 Cel			1010DDDR	BOTTOM		HARDWARE	R-PBGA-B8		5.5 V		4000000 Write/Erase Cycles	1 MHz		Not Qualified	5 ms	I2C	131072 bit	1.7 V					.000001 Amp
M24128-BRCT6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words			8	GRID ARRAY						85 Cel			16KX8	16K	-40 Cel				BOTTOM			R-PBGA-B8		5.5 V			1 MHz			5 ms	I2C	131072 bit	1.8 V
M95M04-DRCS6TP/V	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	524288 words	2.5		8	GRID ARRAY, VERY THIN PROFILE				40		85 Cel			512KX8	512K	-40 Cel				BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B8		5.5 V	.58 mm	1200000 Write/Erase Cycles	10 MHz	1.863 mm		5 ms	SPI	4194304 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	2.809 mm	2.5
M24128-BFCT6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		1.8/5	8	GRID ARRAY	BGA8,3X5,14/8		EEPROMs	200		85 Cel			16KX8	16K	-40 Cel			1010DDDR	BOTTOM		HARDWARE	R-PBGA-B8		5.5 V		4000000 Write/Erase Cycles	1 MHz		Not Qualified	5 ms	I2C	131072 bit	1.7 V					.000001 Amp
M24128-BRCT6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words			8	GRID ARRAY						85 Cel			16KX8	16K	-40 Cel				BOTTOM			R-PBGA-B8		5.5 V			1 MHz			5 ms	I2C	131072 bit	1.8 V
M95M01-RCS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		5 mA	131072 words		2/5	8	GRID ARRAY	BGA8,3X3,47/24		EEPROMs	40	.6 mm	85 Cel			128KX8	128K	-40 Cel				BOTTOM		HARDWARE/SOFTWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		SPI	1048576 bit						.000003 Amp
M24128-DFCT6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words			8	GRID ARRAY						85 Cel			16KX8	16K	-40 Cel				BOTTOM			R-PBGA-B8		5.5 V			1 MHz			5 ms	I2C	131072 bit	1.7 V
M24M01-RCS6G/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		5 mA	131072 words		2/5	8	GRID ARRAY	BGA8,3X3,47/24		EEPROMs	40	.6 mm	85 Cel			128KX8	128K	-40 Cel			1010DDMR	BOTTOM		HARDWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		I2C	1048576 bit						.000001 Amp
M24M01-RCS6TG/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		5 mA	131072 words		2/5	8	GRID ARRAY	BGA8,3X3,47/24		EEPROMs	40	.6 mm	85 Cel			128KX8	128K	-40 Cel			1010DDMR	BOTTOM		HARDWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		I2C	1048576 bit						.000001 Amp
M24512-RCS6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words	5	2/5	8	GRID ARRAY	BGA8,3X5,17/10	1	EEPROMs	200	.254 mm	85 Cel			64KX8	64K	-40 Cel			1010DDDR	BOTTOM		HARDWARE	R-PBGA-B8		5.5 V		4000000 Write/Erase Cycles	.4 MHz	1.289 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.955 mm	5
M24512-RCS6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words	5	2/5	8	GRID ARRAY	BGA8,3X5,17/10	1	EEPROMs	200	.254 mm	85 Cel			64KX8	64K	-40 Cel			1010DDDR	BOTTOM		HARDWARE	R-PBGA-B8		5.5 V		4000000 Write/Erase Cycles	.4 MHz	1.289 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.955 mm	5
M95M04-DRCS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	524288 words	2.5		8	GRID ARRAY, VERY THIN PROFILE				40		85 Cel			512KX8	512K	-40 Cel				BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B8		5.5 V	.58 mm	1200000 Write/Erase Cycles	10 MHz	1.863 mm		5 ms	SPI	4194304 bit	1.8 V					.000002 Amp	2.809 mm	2.5
M24128-BWCT6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words			8	GRID ARRAY						85 Cel			16KX8	16K	-40 Cel				BOTTOM			R-PBGA-B8		5.5 V			1 MHz			5 ms	I2C	131072 bit	2.5 V
M24M01-RCS6P/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		5 mA	131072 words		2/5	8	GRID ARRAY	BGA8,3X3,47/24		EEPROMs	40	.6 mm	85 Cel			128KX8	128K	-40 Cel			1010DDMR	BOTTOM		HARDWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		I2C	1048576 bit						.000001 Amp
M24128-BWCT6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words			8	GRID ARRAY						85 Cel			16KX8	16K	-40 Cel				BOTTOM			R-PBGA-B8		5.5 V			1 MHz			5 ms	I2C	131072 bit	2.5 V
M24128-BFCT6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		1.8/5	8	GRID ARRAY	BGA8,3X5,14/8		EEPROMs	200		85 Cel			16KX8	16K	-40 Cel			1010DDDR	BOTTOM		HARDWARE	R-PBGA-B8		5.5 V		4000000 Write/Erase Cycles	1 MHz		Not Qualified	5 ms	I2C	131072 bit	1.7 V					.000001 Amp
M95M04-DRCS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	524288 words	2.5		8	GRID ARRAY, VERY THIN PROFILE				40		85 Cel			512KX8	512K	-40 Cel				BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B8		5.5 V	.58 mm	1200000 Write/Erase Cycles	10 MHz	1.863 mm		5 ms	SPI	4194304 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	2.809 mm	2.5
M24512-RCS6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words	5	2/5	8	GRID ARRAY	BGA8,3X5,17/10	1	EEPROMs	200	.254 mm	85 Cel			64KX8	64K	-40 Cel			1010DDDR	BOTTOM		HARDWARE	R-PBGA-B8		5.5 V		4000000 Write/Erase Cycles	.4 MHz		Not Qualified	5 ms	I2C	524288 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp		5
M95M04-DRCS6P/V	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	524288 words	2.5		8	GRID ARRAY, VERY THIN PROFILE				40		85 Cel			512KX8	512K	-40 Cel				BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B8		5.5 V	.58 mm	1200000 Write/Erase Cycles	10 MHz	1.863 mm		5 ms	SPI	4194304 bit	1.8 V					.000002 Amp	2.809 mm	2.5
M95M01-RCS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		5 mA	131072 words		2/5	8	GRID ARRAY	BGA8,3X3,47/24		EEPROMs	40	.6 mm	85 Cel			128KX8	128K	-40 Cel				BOTTOM		HARDWARE/SOFTWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		SPI	1048576 bit						.000003 Amp
M24128-BRCT6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words			8	GRID ARRAY						85 Cel			16KX8	16K	-40 Cel				BOTTOM			R-PBGA-B8		5.5 V			1 MHz			5 ms	I2C	131072 bit	1.8 V
M24128-DFCT6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words			8	GRID ARRAY						85 Cel			16KX8	16K	-40 Cel				BOTTOM			R-PBGA-B8		5.5 V			1 MHz			5 ms	I2C	131072 bit	1.7 V
M24128-BWCT6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words			8	GRID ARRAY						85 Cel			16KX8	16K	-40 Cel				BOTTOM			R-PBGA-B8		5.5 V			1 MHz			5 ms	I2C	131072 bit	2.5 V
M24128-DFCT6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		1.8/5	8	GRID ARRAY	BGA8,3X5,14/8		EEPROMs	200		85 Cel			16KX8	16K	-40 Cel			1010DDDR	BOTTOM		HARDWARE	R-PBGA-B8		5.5 V		4000000 Write/Erase Cycles	1 MHz		Not Qualified	5 ms	I2C	131072 bit	1.7 V					.000001 Amp
NXH5104UK/A1	NXP Semiconductors	EEPROM	OTHER	13	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		4194304 words	1.2		1	GRID ARRAY	BGA13,3X6,16			10	.4 mm	85 Cel			4MX1	4M	-20 Cel				BOTTOM	1		R-PBGA-B13		2 V	.42 mm	500000 Write/Erase Cycles		2.74 mm			SPI	4194304 bit	1 V						2.8 mm	1.2

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.