BGA EEPROM 67

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
DS2433X-ZS	Maxim Integrated	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			512 words	5			8	GRID ARRAY					85 Cel	512X8	512	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B6		6 V	.864 mm	1.91 mm	Not Qualified		1-WIRE		4096 bit	2.8 V		e0				2.85 mm
K8P2716UZC-JI4CT	Samsung	EEPROM CARD	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified				134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	65 ns	2.7	YES
K8P2716UZC-JE4ET	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified				134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES
K8P2815UQC-JE4CT	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified			BOTTOM/TOP	134217728 bit		8	e3	260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
K8P2815UQC-JI4DT	Samsung	EEPROM CARD	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified			BOTTOM/TOP	134217728 bit		8	e3	260	NOR TYPE	.00003 Amp		YES	70 ns	2.7	YES
K8P2716UZC-JI4ET	Samsung	EEPROM CARD	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified				134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES
K8P2716UZC-JE4DT	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified				134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	70 ns	2.7	YES
K8P2716UZC-JI4DT	Samsung	EEPROM CARD	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified				134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	70 ns	2.7	YES
K8P2716UZC-JC4DT	Samsung	EEPROM CARD	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified				134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	70 ns	2.7	YES
K8P2716UZC-JE4CT	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified				134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	65 ns	2.7	YES
K8P5516UZB-EE4ET	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-25 Cel	256	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified				268435456 bit		8/16	e3		NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES
K8P2815UQC-JI4BT	Samsung	EEPROM CARD	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified			BOTTOM/TOP	134217728 bit		8	e3	260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
K8P2815UQC-JE4DT	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified			BOTTOM/TOP	134217728 bit		8	e3	260	NOR TYPE	.00003 Amp		YES	70 ns	2.7	YES
K8P2815UQC-JE4BT	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified			BOTTOM/TOP	134217728 bit		8	e3	260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
K8P2716UZC-JC4CT	Samsung	EEPROM CARD	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified				134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	65 ns	2.7	YES
K8P2716UZC-JC4ET	Samsung	EEPROM CARD	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	128	YES	MATTE TIN	YES	BOTTOM	S-PBGA-B64	1				Not Qualified				134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES
K8P2815UQC-JI4CT	Samsung	EEPROM CARD	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64					Not Qualified			BOTTOM/TOP	134217728 bit		8	e1	260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
K8P5516UZB-EI4ET	Samsung	EEPROM CARD	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	55 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64					Not Qualified				268435456 bit		8/16	e1	260	NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES
EPCQL512F24IN	Altera	CONFIGURATION MEMORY	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY					85 Cel	512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B24		2 V				8 ms			536870912 bit	1.7 V		e1

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.