DFP EEPROM 88

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28C256-20FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD	DUAL			R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles	10.16 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	200 ns	5	YES
AT28HC256-12FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs	10	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD	DUAL			R-CDFP-F28		5.5 V	3.02 mm	10000 Write/Erase Cycles	10.16 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	120 ns	5	YES
AT28C256-15FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD	DUAL			R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles	10.16 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	150 ns	5	YES
AT28C256E-15FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs	10	1.27 mm	125 Cel		32KX8	32K	-55 Cel	NO	TIN LEAD	DUAL	1		R-CDFP-F28	1	5.5 V	3.02 mm	100000 Write/Erase Cycles	10.16 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	150 ns	5	YES
5962-8852507ZA	Defense Logistics Agency	EEPROM	MILITARY		DFP		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		32768 words	5			8	FLATPACK				1.27 mm	125 Cel		32KX8	32K	-55 Cel		TIN LEAD	DUAL					5.5 V	3.02 mm		10.16 mm	Not Qualified	3 ms	262144 bit	4.5 V	AUTOMATIC WRITE		e0	NOT SPECIFIED	NOT SPECIFIED		18.285 mm	150 ns	5
5962-3826707MZA	Microchip Technology	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	125 Cel		128KX8	128K	-55 Cel	NO		DUAL			R-XDFP-F32		5.5 V	3.048 mm	10000 Write/Erase Cycles	11.6586 mm	Not Qualified	10 ms	1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0	NOT SPECIFIED	NOT SPECIFIED	.00085 Amp	20.85 mm	120 ns	5	YES
X28HC256FI-90	Intersil	EEPROM	INDUSTRIAL	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs	100	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD	DUAL			R-CDFP-F28		5.5 V	2.92 mm	1000000 Write/Erase Cycles	12.445 mm	Not Qualified	5 ms	262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0			.0005 Amp		90 ns	5	YES
AT28C256-25FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD	DUAL			R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles	10.16 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	250 ns	5	YES
AT28C256F-15FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs	10	1.27 mm	125 Cel		32KX8	32K	-55 Cel	NO	TIN LEAD	DUAL	1		R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles	10.16 mm	Not Qualified	3 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	150 ns	5	YES
AT28C010-12FM/883	Microchip Technology	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs	10	1.27 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	NO	TIN LEAD	DUAL			R-CDFP-F32		5.5 V	3.05 mm	10000 Write/Erase Cycles	12.2 mm	Not Qualified	10 ms	1048576 bit	4.5 V	AUTOMATIC WRITE; DATA RETENTION: 10 YEARS	128	e0			.0003 Amp	20.85 mm	120 ns	5	YES
AT28C010E-12FM/883	Microchip Technology	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	5	YES		8	FLATPACK			10	1.27 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	NO		DUAL	1	HARDWARE/SOFTWARE	R-CDFP-F32		5.5 V	3.05 mm	100000 Write/Erase Cycles	12.15 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128				.0003 Amp	20.8 mm	120 ns	5	YES
AT28HC256-90FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs	10	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD	DUAL			R-CDFP-F28		5.5 V	3.02 mm	10000 Write/Erase Cycles	10.16 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	90 ns	5	YES
M38510/26104BZX	Texas Instruments	EEPROM	MILITARY	28	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		32768 words	5			8	FLATPACK					125 Cel		32KX8	32K	-55 Cel			DUAL			R-XDFP-F28		5.5 V				Not Qualified	10 ms	262144 bit	4.5 V								200 ns	5
5962-3826716QMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-CDFP-F32		5.5 V	3.1242 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0				20.828 mm	250 ns	5
5962-3826717V6C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4					200 ns	5
5962-3826717Q7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.63 mm		10.414 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					200 ns	5
5962-3826718QMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-CDFP-F32		5.5 V	3.1242 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0				20.828 mm	150 ns	5
5962-3826718VMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4				20.825 mm	150 ns	5
5962-3826718Q7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.63 mm		10.414 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					150 ns	5
5962-3826718VMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0				20.825 mm	150 ns	5
5962-3826718V7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.63 mm		10.415 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					150 ns	5
5962-3826719Q6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					120 ns	5
5962-3826716Q6C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4					250 ns	5
5962-3826717Q7C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.63 mm		10.414 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4					200 ns	5
5962-3826717Q6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					200 ns	5
5962-3826719V7C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.63 mm		10.415 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4					120 ns	5
5962-3826716VMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4				20.825 mm	250 ns	5
5962-3826717VMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4				20.825 mm	200 ns	5
5962-3826719VMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4				20.825 mm	120 ns	5
5962-3826719V7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.63 mm		10.415 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					120 ns	5
5962-3826719Q7C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.63 mm		10.414 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4					120 ns	5
5962-3826718Q7C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.63 mm		10.414 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4					150 ns	5
5962-3826718Q6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					150 ns	5
5962-3826717QMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-CDFP-F32		5.5 V	3.1242 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0				20.828 mm	200 ns	5
5962-3826717QMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-CDFP-F32		5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4				20.825 mm	200 ns	5
5962-3826717V6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					200 ns	5
5962-3826716V7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.63 mm		10.415 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					250 ns	5
5962-3826719QMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-CDFP-F32		5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0				20.825 mm	120 ns	5
5962-3826719V6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					120 ns	5
5962-3826718Q6C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4					150 ns	5
5962-3826716Q6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					250 ns	5
5962-3826716Q7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.63 mm		10.414 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					250 ns	5
5962-3826717V7C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.63 mm		10.415 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4					200 ns	5
5962-3826716V6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					250 ns	5
5962-3826716QMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-CDFP-F32		5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4				20.825 mm	250 ns	5
5962-3826718QMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-CDFP-F32		5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4				20.825 mm	150 ns	5
5962-3826719Q7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD	DUAL			R-XDFP-F32		5.5 V	3.63 mm		10.414 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0					120 ns	5
5962-3826717Q6C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD	DUAL			R-XDFP-F32		5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4					200 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.