DFP EEPROM 88

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
5962-3826718V6C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD	DUAL	R-XDFP-F32	5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4			150 ns	5
5962-3826719V6C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD	DUAL	R-XDFP-F32	5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4			120 ns	5
5962-3826719VMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD	DUAL	R-XDFP-F32	5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0		20.825 mm	120 ns	5
5962-3826718V6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD	DUAL	R-XDFP-F32	5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0			150 ns	5
5962-3826717V7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD	DUAL	R-XDFP-F32	5.5 V	3.63 mm		10.415 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0			200 ns	5
5962-3826716V6C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD	DUAL	R-XDFP-F32	5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4			250 ns	5
5962-3826718V7C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD	DUAL	R-XDFP-F32	5.5 V	3.63 mm		10.415 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4			150 ns	5
5962-3826716VMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD	DUAL	R-XDFP-F32	5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0		20.825 mm	250 ns	5
5962-3826716V7C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD	DUAL	R-XDFP-F32	5.5 V	3.63 mm		10.415 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4			250 ns	5
5962-3826719QMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD	DUAL	R-CDFP-F32	5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4		20.825 mm	120 ns	5
5962-3826717VMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD	DUAL	R-XDFP-F32	5.5 V	3.12 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0		20.825 mm	200 ns	5
5962-3826719Q6C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD	DUAL	R-XDFP-F32	5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4			120 ns	5
5962-3826716Q7C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD	DUAL	R-XDFP-F32	5.5 V	3.63 mm		10.414 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4			250 ns	5
X28C512F-12	Renesas Electronics	EEPROM	COMMERCIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	70 Cel			64KX8	64K	0 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		120 ns		YES
X28C512F-20	Renesas Electronics	EEPROM	COMMERCIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	70 Cel			64KX8	64K	0 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		200 ns		YES
X28C010FM	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	FLATPACK	FL32,.4		100	1.27 mm	70 Cel	NO	3-STATE	128KX8	128K	0 Cel			DUAL	R-CDFP-F32	5.5 V	3.05 mm	100000 Write/Erase Cycles	10.93 mm		10 ms	1048576 bit	4.5 V	LG_MAX	256		.0005 Amp	21.08 mm		5	YES
X28C512FI-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		90 ns		YES
X28C512RMB-12	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	FLATPACK	FL32,.4		10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		DUAL	R-CDFP-F32	5.5 V	3.05 mm	100000 Write/Erase Cycles	11.055 mm		10 ms	524288 bit	4.5 V	LG_MAX			.0005 Amp	21.08 mm	120 ns	5	YES
X28C512F-25	Renesas Electronics	EEPROM	COMMERCIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	70 Cel			64KX8	64K	0 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		250 ns		YES
X28C010FI-12	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	FLATPACK	FL32,.4		100	1.27 mm	85 Cel	NO	3-STATE	128KX8	128K	-40 Cel			DUAL	R-CDFP-F32	5.5 V	3.05 mm	100000 Write/Erase Cycles	10.93 mm		10 ms	1048576 bit	4.5 V	LG_MAX	256		.0005 Amp	21.08 mm	120 ns	5	YES
X28C010FI-20	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	FLATPACK	FL32,.4		100	1.27 mm	85 Cel	NO	3-STATE	128KX8	128K	-40 Cel			DUAL	R-CDFP-F32	5.5 V	3.05 mm	100000 Write/Erase Cycles	10.93 mm		10 ms	1048576 bit	4.5 V	LG_MAX	256		.0005 Amp	21.08 mm	200 ns	5	YES
X28C010F-25	Renesas Electronics	EEPROM	COMMERCIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	131072 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO		DUAL	R-XDFP-F32					Not Qualified		1048576 bit			256		.0005 Amp		250 ns		YES
X28C512F-15	Renesas Electronics	EEPROM	COMMERCIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	70 Cel			64KX8	64K	0 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		150 ns		YES
X28C010FI-15	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	FLATPACK	FL32,.4		100	1.27 mm	85 Cel	NO	3-STATE	128KX8	128K	-40 Cel			DUAL	R-CDFP-F32	5.5 V	3.05 mm	100000 Write/Erase Cycles	10.93 mm		10 ms	1048576 bit	4.5 V	LG_MAX	256		.0005 Amp	21.08 mm	150 ns	5	YES
X28C512FI-25	Renesas Electronics	EEPROM	INDUSTRIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO		DUAL	R-XDFP-F32		3.3 mm	100000 Write/Erase Cycles	10.93 mm	Not Qualified	10 ms	524288 bit	4.5 V		128		.0005 Amp	20.84 mm	250 ns		YES
X28C010FM-12	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	FLATPACK	FL32,.4		100	1.27 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel			DUAL	R-CDFP-F32	5.5 V	3.05 mm	100000 Write/Erase Cycles	10.93 mm		10 ms	1048576 bit	4.5 V	LG_MAX	256		.0005 Amp	21.08 mm	120 ns	5	YES
X28C010FMB-12C7729	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel			DUAL	R-CDFP-F32	5.5 V	3.05 mm		10.93 mm		10 ms	1048576 bit	4.5 V	LG_MAX				21.08 mm	120 ns	5
X28C010FMB-12	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	FLATPACK	FL32,.4		100	1.27 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel			DUAL	R-CDFP-F32	5.5 V	3.05 mm	100000 Write/Erase Cycles	10.93 mm		10 ms	1048576 bit	4.5 V	LG_MAX	256		.0005 Amp	21.08 mm	120 ns	5	YES
X28C010FMB-15	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	FLATPACK	FL32,.4		100	1.27 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel			DUAL	R-CDFP-F32	5.5 V	3.05 mm	100000 Write/Erase Cycles	10.93 mm		10 ms	1048576 bit	4.5 V	LG_MAX	256		.0005 Amp	21.08 mm	150 ns	5	YES
X28C512F-90	Renesas Electronics	EEPROM	COMMERCIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	70 Cel			64KX8	64K	0 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		90 ns		YES
X28C512FM-90	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		90 ns		YES
X28C512FMB-12	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	FLATPACK	FL32,.4		10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		DUAL	R-CDFP-F32	5.5 V	3.05 mm	100000 Write/Erase Cycles	11.055 mm		10 ms	524288 bit	4.5 V	LG_MAX			.0005 Amp	21.08 mm	120 ns	5	YES
X28C512FI-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		150 ns		YES
X28C010FM-25	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	131072 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	125 Cel			128KX8	128K	-55 Cel	NO		DUAL	R-XDFP-F32					Not Qualified		1048576 bit			256		.0005 Amp		250 ns		YES
X28C512FI-20	Renesas Electronics	EEPROM	INDUSTRIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		200 ns		YES
X28C010F-12	Renesas Electronics	EEPROM	COMMERCIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	131072 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO		DUAL	R-XDFP-F32					Not Qualified		1048576 bit			256		.0005 Amp		120 ns		YES
X28C512FI-12	Renesas Electronics	EEPROM	INDUSTRIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		120 ns		YES
X28C512FMB-90	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		90 ns		YES
X28C512FM-25	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		250 ns		YES
X28C010F-20	Renesas Electronics	EEPROM	COMMERCIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	131072 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO		DUAL	R-XDFP-F32					Not Qualified		1048576 bit			256		.0005 Amp		200 ns		YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.