DIE EEPROM 168

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Endurance	Maximum Clock Frequency (fCLK)	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time	Programming Voltage (V)
ST1335	STMicroelectronics	EEPROM		5	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		34 words	5		8	UNCASED CHIP						34X8	34			UPPER			X-XUUC-N5					Not Qualified			272 bit			NOT SPECIFIED	NOT SPECIFIED			5
M14256-WD22	STMicroelectronics	EEPROM	COMMERCIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	262144 words	3.3	3/5	1	UNCASED CHIP	MODULE,8LEAD,.4		EEPROMs	40	70 Cel	256KX1	256K	0 Cel	1010000R	UPPER		HARDWARE	R-XUUC-N	1	5.5 V	100000 Write/Erase Cycles	.4 MHz	Not Qualified	10 ms	I2C	262144 bit	2.5 V				.000002 Amp
SRI4K-W4/1GE	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		128 words	3		32	UNCASED CHIP					85 Cel	128X32	128	-20 Cel		UPPER			X-XUUC-N		3.5 V				5 ms		4096 bit	2.5 V						3
M14C04-WS44	STMicroelectronics	EEPROM	COMMERCIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	3.3		1	UNCASED CHIP					70 Cel	4KX1	4K	0 Cel		UPPER			X-XUUC-N		5.5 V		.4 MHz	Not Qualified	10 ms	I2C	4096 bit	2.5 V
LRI512-SBN18/22A1S	STMicroelectronics	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16 words			32	UNCASED CHIP					85 Cel	16X32	16	-20 Cel		UPPER			R-XUUC-NX		3 V		13.567 MHz	Not Qualified	5 ms		512 bit	1.5 V						3
ST1333-W2/XXYY	STMicroelectronics	EEPROM		6	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		34 words	5		8	UNCASED CHIP						34X8	34			UPPER			X-XUUC-N6					Not Qualified	5 ms	I2C	272 bit			NOT SPECIFIED	NOT SPECIFIED
SRI2K-W4/1GE	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words	3		32	UNCASED CHIP					85 Cel	64X32	64	-20 Cel		UPPER			X-XUUC-N		3.5 V				5 ms		2048 bit	2.5 V						3
M14C32-WW4	STMicroelectronics	EEPROM	COMMERCIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		32768 words	3.3		1	UNCASED CHIP					70 Cel	32KX1	32K	0 Cel		UPPER			X-XUUC-N		5.5 V		.4 MHz	Not Qualified	10 ms	I2C	32768 bit	2.5 V
ST1331-W4/XXYY	STMicroelectronics	EEPROM		6	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		34 words	5		8	UNCASED CHIP						34X8	34			UPPER			X-XUUC-N6					Not Qualified	5 ms	I2C	272 bit			NOT SPECIFIED	NOT SPECIFIED
SRT512-SBN18/XXX	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16 words	3		32	UNCASED CHIP					85 Cel	16X32	16	-20 Cel		UPPER			X-XUUC-N		3.5 V						512 bit	2.5 V						3
M14C32-S42	STMicroelectronics	EEPROM	COMMERCIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		32768 words	3.3		1	UNCASED CHIP					70 Cel	32KX1	32K	0 Cel		UPPER			X-XUUC-N		5.5 V		.4 MHz	Not Qualified	10 ms	I2C	32768 bit	2.5 V
M14C16-WS44	STMicroelectronics	EEPROM	COMMERCIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16384 words	3.3		1	UNCASED CHIP					70 Cel	16KX1	16K	0 Cel		UPPER			X-XUUC-N		5.5 V		.4 MHz	Not Qualified	10 ms	I2C	16384 bit	2.5 V
M14C16-WD20	STMicroelectronics	EEPROM	COMMERCIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	16384 words	3.3	3/5	1	UNCASED CHIP	MODULE,8LEAD,.4		EEPROMs	40	70 Cel	16KX1	16K	0 Cel	1010MMMR	UPPER		HARDWARE	R-XUUC-N	1	5.5 V	1000000 Write/Erase Cycles	.4 MHz	Not Qualified	10 ms	I2C	16384 bit	2.5 V				.0000005 Amp
SRI4K-SBN18/XXX	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		128 words	3		32	UNCASED CHIP					85 Cel	128X32	128	-20 Cel		UPPER			X-XUUC-N		3.5 V				5 ms		4096 bit	2.5 V						3
LRI1KSBN18/1GE	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		32 words			32	UNCASED CHIP					85 Cel	32X32	32	-20 Cel		UPPER			X-XUUC-N		3 V						1024 bit	1.5 V						3
LRI2K-SBN18/3XX	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words			32	UNCASED CHIP					85 Cel	64X32	64	-20 Cel		UPPER			X-XUUC-N		3 V				5.8 ms		2048 bit	1.5 V						3
SRI4K-SBN18/1GE	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		128 words	3		32	UNCASED CHIP					85 Cel	128X32	128	-20 Cel		UPPER			X-XUUC-N		3.5 V				5 ms		4096 bit	2.5 V						3
ST1336	STMicroelectronics	EEPROM		5	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		34 words	5		8	UNCASED CHIP						34X8	34			UPPER			X-XUUC-N5					Not Qualified			272 bit							5
SRI512-SB12I/XXX	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16 words	3		32	UNCASED CHIP					85 Cel	16X32	16	-20 Cel		UPPER			X-XUUC-N		3.5 V						512 bit	2.5 V						3
M24C64-FTW20I/90	STMicroelectronics	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words			8	UNCASED CHIP					85 Cel	8KX8	8K	-40 Cel		UPPER			X-XUUC-N		5.5 V		1 MHz		5 ms	I2C	65536 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED
M24M01-RAW21/90	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		262144 words			8	UNCASED CHIP					85 Cel	256KX8	256K	-40 Cel		UPPER			X-XUUC-N8		5.5 V		1 MHz	Not Qualified	5 ms	I2C	2097152 bit	1.8 V					900 ns
M24LR64E-RUW20/2	STMicroelectronics	EEPROM			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	.04 mA	2048 words	2.5		32	UNCASED CHIP		8		40		2KX32	2K			UPPER	2		R-XUUC-N		5.5 V		.4 MHz		5 ms	I2C	65536 bit	1.8 V	1000000 ENDURANCE CYCLES	NOT SPECIFIED	NOT SPECIFIED	.00001 Amp		2.5
M24LR64-RS185/2	STMicroelectronics	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2048 words	2.5		32	UNCASED CHIP		8			85 Cel	2KX32	2K	-40 Cel		UPPER			R-XUUC-N		5.5 V		.4 MHz	Not Qualified	5 ms	I2C	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED
M24M01-DFKW20I/90	STMicroelectronics	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	2.5		8	UNCASED CHIP		1			85 Cel	128KX8	128K	-40 Cel		UPPER			R-XUUC-N		5.5 V		1 MHz		5 ms	I2C	1048576 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED
M24LR64-RZ185/2	STMicroelectronics	EEPROM			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2048 words	2.5		32	UNCASED CHIP		8				2KX32	2K			UPPER			X-XUUC-N		5.5 V		.4 MHz		5 ms	I2C	65536 bit	1.8 V
M24LR16E-RUW20/2	STMicroelectronics	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	2.5		32	UNCASED CHIP					85 Cel	512X32	512	-40 Cel		UPPER			X-XUUC-N		5.5 V		.4 MHz		5 ms	I2C	16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED
M24128-BFTW20I/90	STMicroelectronics	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	2.5		8	UNCASED CHIP					85 Cel	16KX8	16K	-40 Cel		UPPER			X-XUUC-N		5.5 V		1 MHz		5 ms	I2C	131072 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED
M24LR64E-SB12I/2	STMicroelectronics	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2048 words	2.5		32	UNCASED CHIP		8			85 Cel	2KX32	2K	-40 Cel		UPPER			X-XUUC-N		5.5 V		.4 MHz		5 ms	I2C	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED
M24128-BFKW20I/90	STMicroelectronics	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	2.5		8	UNCASED CHIP					85 Cel	16KX8	16K	-40 Cel		UPPER			X-XUUC-N		5.5 V		1 MHz		5 ms	I2C	131072 bit	1.7 V
M24LR04E-RUW20/2	STMicroelectronics	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	2.5		32	UNCASED CHIP		8			85 Cel	128X32	128	-40 Cel		UPPER			X-XUUC-N		5.5 V		.4 MHz		5 ms	I2C	4096 bit	1.8 V
M24512-DFKW20I/90	STMicroelectronics	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		65536 words			8	UNCASED CHIP					85 Cel	64KX8	64K	-40 Cel		UPPER			X-XUUC-N		5.5 V		1 MHz		5 ms	I2C	524288 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED
M24C32-FTW20I90	STMicroelectronics	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words			8	UNCASED CHIP					85 Cel	4KX8	4K	-40 Cel		UPPER			X-XUUC-N		5.5 V		1 MHz		5 ms	I2C	32768 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED
M24LR04E-RUW206T/2	STMicroelectronics	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	2.5		32	UNCASED CHIP		8			85 Cel	128X32	128	-40 Cel		UPPER			X-XUUC-N		5.5 V		.4 MHz		5 ms	I2C	4096 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED
PCF2042U	NXP Semiconductors	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		8	UNCASED CHIP				10	85 Cel	256X8	256	-40 Cel		UPPER			X-XUUC-N		5.5 V		.052 MHz	Not Qualified	2.5 ms	I2C	2048 bit	4.5 V	100K ERASE/WRITE CYCLES MIN; DATA RETENTION 10 YEARS MIN
PCF2042W	NXP Semiconductors	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		8	UNCASED CHIP				10	85 Cel	256X8	256	-40 Cel		UPPER			X-XUUC-N		5.5 V		.052 MHz	Not Qualified	2.5 ms	I2C	2048 bit	4.5 V	100K ERASE/WRITE CYCLES MIN; DATA RETENTION 10 YEARS MIN
PCF2042V	NXP Semiconductors	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		8	UNCASED CHIP				10	85 Cel	256X8	256	-40 Cel		UPPER			X-XUUC-N		5.5 V		.052 MHz	Not Qualified	2.5 ms	I2C	2048 bit	4.5 V	100K ERASE/WRITE CYCLES MIN; DATA RETENTION 10 YEARS MIN
SLE4406SPED	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		1	UNCASED CHIP					80 Cel	512X1	512	-40 Cel		UPPER			R-XUUC-N		5.5 V			Not Qualified			512 bit	4.5 V						5
SLE5528C	Infineon Technologies	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5	5	8	UNCASED CHIP	DIE OR CHIP		EEPROMs	10	100 Cel	1KX8	1K	-40 Cel		UPPER		SOFTWARE	R-XUUC-N		5.5 V	100000 Write/Erase Cycles		Not Qualified			8192 bit	4.5 V						5
SLE5518D	Infineon Technologies	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5	5	8	UNCASED CHIP	DIE OR CHIP		EEPROMs	10	100 Cel	1KX8	1K	-40 Cel		UPPER		SOFTWARE	R-XUUC-N		5.5 V	100000 Write/Erase Cycles		Not Qualified			8192 bit	4.5 V						5
SLE4406SPD	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		1	UNCASED CHIP					80 Cel	512X1	512	-40 Cel		UPPER			R-XUUC-N		5.5 V			Not Qualified			512 bit	4.5 V						5
SLE4441C	Infineon Technologies	EEPROM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		8	UNCASED CHIP				10	80 Cel	128X8	128	-35 Cel		UPPER			X-XUUC-N		5.5 V	100000 Write/Erase Cycles		Not Qualified			1024 bit	4.75 V	DATA RETENTION => 10 YEARS; ENDURANCE =>100K WRITE/ERASE CYCLES					5
SLE5542D	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5	5	8	UNCASED CHIP	DIE OR CHIP		EEPROMs	10	80 Cel	256X8	256	-40 Cel		UPPER		SOFTWARE	R-XUUC-N		5.5 V	100000 Write/Erase Cycles		Not Qualified	5 ms		2048 bit	4.5 V						5
SLE4428C	Infineon Technologies	EEPROM	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	1024 words	5	5	8	UNCASED CHIP	WAFER		EEPROMs	10	100 Cel	1KX8	1K	-35 Cel		UPPER		SOFTWARE	R-XUUC-N8		5.5 V	10000 Write/Erase Cycles		Not Qualified		3-WIRE	8192 bit	4.5 V	DATA RETENTION => 10 YEARS			.01 Amp
SLE4440C	Infineon Technologies	EEPROM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		64 words	5		8	UNCASED CHIP				10	80 Cel	64X8	64	-35 Cel		UPPER			X-XUUC-N		5.5 V	100000 Write/Erase Cycles		Not Qualified			512 bit	4.75 V	DATA RETENTION => 10 YEARS; ENDURANCE =>100K WRITE/ERASE CYCLES					5
SLE5538C	Infineon Technologies	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5	5	8	UNCASED CHIP	DIE OR CHIP		EEPROMs	10	100 Cel	1KX8	1K	-40 Cel		UPPER		SOFTWARE	R-XUUC-N		5.5 V	100000 Write/Erase Cycles		Not Qualified			8192 bit	4.5 V						5
SLE4418M2.2	Infineon Technologies	EEPROM	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	1024 words	5	5	8	UNCASED CHIP	MODULE,8LEAD,.46		EEPROMs	10	100 Cel	1KX8	1K	-35 Cel		UPPER		SOFTWARE	R-XUUC-N8		5.5 V	10000 Write/Erase Cycles		Not Qualified		3-WIRE	8192 bit	4.5 V	DATA RETENTION => 10 YEARS			.01 Amp
SLE5538D	Infineon Technologies	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5	5	8	UNCASED CHIP	DIE OR CHIP		EEPROMs	10	100 Cel	1KX8	1K	-40 Cel		UPPER		SOFTWARE	R-XUUC-N		5.5 V	100000 Write/Erase Cycles		Not Qualified			8192 bit	4.5 V						5
SLE5518M2	Infineon Technologies	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		8	UNCASED CHIP					100 Cel	1KX8	1K	-40 Cel		UPPER			R-XUUC-N		5.5 V			Not Qualified			8192 bit	4.5 V						5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.