DIE EEPROM 168

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
SLE5538M2	Infineon Technologies	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5			8	UNCASED CHIP					100 Cel			1KX8	1K	-40 Cel		UPPER		R-XUUC-N	5.5 V					Not Qualified			8192 bit	4.5 V							5
SLE5528D	Infineon Technologies	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		100 Cel			1KX8	1K	-40 Cel		UPPER	SOFTWARE	R-XUUC-N	5.5 V		100000 Write/Erase Cycles			Not Qualified			8192 bit	4.5 V							5
SLE5532D	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		80 Cel			256X8	256	-40 Cel		UPPER	SOFTWARE	R-XUUC-N	5.5 V		100000 Write/Erase Cycles			Not Qualified	5 ms		2048 bit	4.5 V							5
SLE5532C	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		80 Cel			256X8	256	-40 Cel		UPPER	SOFTWARE	R-XUUC-N	5.5 V		100000 Write/Erase Cycles			Not Qualified	5 ms		2048 bit	4.5 V							5
SLE5542C	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		80 Cel			256X8	256	-40 Cel		UPPER	SOFTWARE	R-XUUC-N	5.5 V		100000 Write/Erase Cycles			Not Qualified	5 ms		2048 bit	4.5 V							5
SLE4432C	Infineon Technologies	EEPROM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	256 words	5		5	8	UNCASED CHIP	WAFER	EEPROMs	10		80 Cel			256X8	256	-35 Cel		UPPER	SOFTWARE	X-XUUC-N	5.5 V		10000 Write/Erase Cycles			Not Qualified		I2C	2048 bit	4.75 V	DATA RETENTION => 10 YEARS; ENDURANCE =>100K WRITE/ERASE CYCLES			.01 Amp
SLE5528M2	Infineon Technologies	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5			8	UNCASED CHIP					100 Cel			1KX8	1K	-40 Cel		UPPER		R-XUUC-N	5.5 V					Not Qualified			8192 bit	4.5 V							5
SLE4406SPEC	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5			1	UNCASED CHIP					80 Cel			512X1	512	-40 Cel		UPPER		R-XUUC-N	5.5 V					Not Qualified			512 bit	4.5 V							5
SLE5518C	Infineon Technologies	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		100 Cel			1KX8	1K	-40 Cel		UPPER	SOFTWARE	R-XUUC-N	5.5 V		100000 Write/Erase Cycles			Not Qualified			8192 bit	4.5 V							5
SLE4418C	Infineon Technologies	EEPROM	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	1024 words	5		5	8	UNCASED CHIP	WAFER	EEPROMs	10		100 Cel			1KX8	1K	-35 Cel		UPPER	SOFTWARE	R-XUUC-N8	5.5 V		10000 Write/Erase Cycles			Not Qualified		3-WIRE	8192 bit	4.5 V	DATA RETENTION => 10 YEARS			.01 Amp
SLE4428M2.2	Infineon Technologies	EEPROM	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	1024 words	5		5	8	UNCASED CHIP	MODULE,8LEAD,.46	EEPROMs	10		100 Cel			1KX8	1K	-35 Cel		UPPER	SOFTWARE	R-XUUC-N8	5.5 V		10000 Write/Erase Cycles			Not Qualified		3-WIRE	8192 bit	4.5 V	DATA RETENTION => 10 YEARS			.01 Amp
SLE4406SPC	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5			1	UNCASED CHIP					80 Cel			512X1	512	-40 Cel		UPPER		R-XUUC-N	5.5 V					Not Qualified			512 bit	4.5 V							5
SLE4442C	Infineon Technologies	EEPROM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	256 words	5		5	8	UNCASED CHIP	WAFER	EEPROMs	10		80 Cel			256X8	256	-35 Cel		UPPER	SOFTWARE	X-XUUC-N	5.5 V		10000 Write/Erase Cycles			Not Qualified		I2C	2048 bit	4.75 V	DATA RETENTION => 10 YEARS; ENDURANCE =>100K WRITE/ERASE CYCLES			.01 Amp
TC58256DC	Toshiba	EEPROM	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		33554432 words	3.3			8	UNCASED CHIP				2.54 mm	55 Cel			32MX8	32M	0 Cel		UPPER		R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			268435456 bit	3 V					45 mm		3
TH58NS100DC	Toshiba	EEPROM	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		134217728 words	3.3			8	UNCASED CHIP				2.54 mm	55 Cel			128MX8	128M	0 Cel		UPPER		R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			1073741824 bit	3 V					45 mm		3
TC58NS128ADC	Toshiba	EEPROM	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		16777216 words	3.3			8	UNCASED CHIP				2.54 mm	55 Cel			16MX8	16M	0 Cel	TIN LEAD	UPPER		R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			134217728 bit	3 V			e0		45 mm		3
TH58NS512DC	Toshiba	EEPROM	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3.3			8	UNCASED CHIP				2.54 mm	55 Cel			64MX8	64M	0 Cel		UPPER		R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			536870912 bit	3 V					45 mm	45 ns	3
TC58V64ADC	Toshiba	EEPROM	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3.3			8	UNCASED CHIP				2.54 mm	55 Cel			8MX8	8M	0 Cel		UPPER		R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			67108864 bit	3 V					45 mm	35 ns	3
TC58128DC	Toshiba	EEPROM	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3.3			8	UNCASED CHIP				2.54 mm	55 Cel			16MX8	16M	0 Cel	Tin/Lead (Sn/Pb)	UPPER		R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			134217728 bit	3 V			e0		45 mm	35 ns	3
X28HT010W	Renesas Electronics	EEPROM			DIE	UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	UNCASED CHIP	DIE OR CHIP		100		175 Cel	NO	3-STATE	128KX8	128K	-40 Cel		UPPER		X-XUUC-N	5.5 V		100000 Write/Erase Cycles				10 ms		1048576 bit	4.5 V	LG_MAX	256		.0005 Amp			5	YES
X28HC64W	Renesas Electronics	EEPROM	COMMERCIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words	5			8	UNCASED CHIP					70 Cel			8KX8	8K	0 Cel	MATTE TIN	UPPER		R-XUUC-N	5.5 V					Not Qualified	5 ms		65536 bit	4.5 V			e3				5
KM28I01	Samsung	EEPROM	COMMERCIAL	8	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			8	UNCASED CHIP					70 Cel		3-STATE	128X8	128	-20 Cel		UPPER		X-XUUC-N8	5.5 V			4.9152 MHz		Not Qualified	10 ms	I2C	1024 bit	4.5 V
KS24L161IB	Samsung	EEPROM	INDUSTRIAL	8	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		16384 words	3.3			1	UNCASED CHIP					85 Cel			16KX1	16K	-40 Cel		UPPER		X-XUUC-N8	5.5 V			.4 MHz		Not Qualified	5 ms	I2C	16384 bit	2 V
KS24L161CB	Samsung	EEPROM	OTHER	8	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		16384 words	3.3			1	UNCASED CHIP					70 Cel			16KX1	16K	-25 Cel		UPPER		X-XUUC-N8	5.5 V			.4 MHz		Not Qualified	5 ms	I2C	16384 bit	2 V

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.