QCCJ EEPROM 1,527

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28HC64B-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V		64	e3	40	245	.0001 Amp	13.97 mm	120 ns	5	YES
AT28C64B-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e3		245	.0001 Amp	13.97 mm	150 ns	5	YES
AT28C256-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD		HARDWARE/SOFTWARE	R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e3	40	245	.0002 Amp	13.97 mm	150 ns	5	YES
AT28HC256-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e3	40	245	.0003 Amp	13.97 mm	120 ns	5	YES
AT28C64B-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e3		245	.0001 Amp	13.97 mm	150 ns	5	YES
AT28LV010-20JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3	YES	3.3	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	NO	MATTE TIN		QUAD	1		R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	1048576 bit	3.135 V		128	e3			.00005 Amp	13.97 mm	200 ns	3.3	YES
AT28C256-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm		10 ms	262144 bit	4.5 V			e3	40	245		13.97 mm	150 ns	5
AT17LV010-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3		3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs	90	1.27 mm	85 Cel		1MX1	1M	-40 Cel		MATTE TIN		QUAD		HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm	100000 Write/Erase Cycles	10 MHz	8.9662 mm	Not Qualified		1048576 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e3			.0002 Amp	8.9662 mm
AT28C64B-15JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	400 mA	8192 words		5			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN		QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	65536 bit	4.5 V			e3	40	245	.0001 Amp	13.97 mm	150 ns	5
AT28HC256-90JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e3	40	245	.0003 Amp	13.97 mm	90 ns	5	YES
X28HC256JIZ-12T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	120 ns	5
AT28C256E-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD		HARDWARE/SOFTWARE	R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e3	40	245	.0002 Amp	13.97 mm	150 ns	5	YES
X28HC256JIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	120 ns	5
AT28LV010-20JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN		QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	1048576 bit	3.135 V			e3			.00005 Amp	13.97 mm	200 ns	3
X28HC256JIZ-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
X28HC256JIZ-90T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
AT28LV010-20JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15000 mA	131072 words		3.3	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN		QUAD	1		R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	1048576 bit	3.135 V		128	e3			.00005 Amp	13.97 mm	200 ns	3.3	YES
AT28LV010-20JU-630	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN		QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	1048576 bit	3.135 V			e3			.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20JU-319	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN		QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	1048576 bit	3.135 V			e3	40	245	.00005 Amp	13.97 mm	200 ns	3
AT28C010-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128	e3	40	245	.0002 Amp	13.97 mm	120 ns	5	YES
AT28C256F-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD		HARDWARE/SOFTWARE	R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	3 ms	262144 bit	4.5 V		64	e3	40	245	.0002 Amp	13.97 mm	150 ns	5	YES
AT28C010E-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	NO	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	1048576 bit	4.5 V	AUTOMATIC WRITE	128	e3	40	245	.0002 Amp	13.97 mm	120 ns	5	YES
AT28LV010-20JU-051	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel				QUAD			R-PQCC-J32		3.465 V	3.556 mm			11.43 mm		10 ms	1048576 bit	3.135 V				NOT SPECIFIED	NOT SPECIFIED		13.97 mm	200 ns	3
X28HC256JI-12	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel				QUAD			R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms	262144 bit	4.5 V							13.97 mm	120 ns	5
X28HC256JI-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel				QUAD			R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms	262144 bit	4.5 V							13.97 mm	150 ns	5
AT28BV64B-20JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	8192 words			YES	3.3	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN		QUAD	1		R-PQCC-J32	3	3.6 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	2.7 V		64	e3	40	245	.00005 Amp	13.97 mm	200 ns		YES
AT28HC64BF-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN		QUAD	1		R-PQCC-J32	1	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	2 ms	65536 bit	4.5 V		64	e3	30	245	.0001 Amp	13.97 mm	120 ns	5	YES
AT28C010-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32		5.5 V	3.556 mm			11.43 mm		10 ms	1048576 bit	4.5 V			e3				13.97 mm	120 ns	5
X28HC256J-15	Intersil	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0			.0005 Amp	13.97 mm	150 ns	5	YES
AT28HC256E-90JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e3	40	245	.0003 Amp	13.97 mm	90 ns	5	YES
AT28C010E-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128	e3		245	.0002 Amp	13.97 mm	150 ns	5	YES
AT28HC256E-70JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e3	40	245		13.97 mm	70 ns	5	YES
AT28BV64B-20JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	8192 words		3	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO			QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.6 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm		10 ms	65536 bit	2.7 V		64				.00005 Amp	13.97 mm	200 ns	3	YES
AT17LV010A-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3		3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs	90	1.27 mm	85 Cel		1MX1	1M	-40 Cel		MATTE TIN	YES	QUAD		HARDWARE	S-PQCC-J20		3.6 V	4.572 mm	100000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified		1048576 bit	3 V	ALSO OPERATES AT 5V SUPPLY		e3			.0002 Amp	8.9662 mm
X28HC256JI-90T1	Intersil	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0			.0005 Amp	13.97 mm	90 ns	5	YES
X28C256J-25	Xicor	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	PAGE WRITE	64	e0			.0005 Amp	13.97 mm	250 ns	5	YES
AT28HC256E-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e3	40	245	.0003 Amp	13.97 mm	120 ns	5	YES
X28HC64JI-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel				QUAD			R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms	65536 bit	4.5 V							13.97 mm	90 ns	5
AT28HC64B-90JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V		64	e3	40	245	.0001 Amp	13.97 mm	90 ns	5	YES
AT28C010E-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32		5.5 V	3.556 mm			11.43 mm		10 ms	1048576 bit	4.5 V			e3				13.97 mm	120 ns	5
AT17LV002A-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	2097152 words		3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs	90	1.27 mm	85 Cel		2MX1	2M	-40 Cel		MATTE TIN	YES	QUAD		HARDWARE	S-PQCC-J20		3.6 V	4.572 mm	100000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified		2097152 bit	3 V	ALSO OPERATES AT 5V SUPPLY		e3			.00035 Amp	8.9662 mm
AT28HC256F-90JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	3 ms	262144 bit	4.5 V		64	e3	40	245	.0003 Amp	13.97 mm	90 ns	5	YES
X28HC256J-12T1	Intersil	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0			.0005 Amp	13.97 mm	120 ns	5	YES
AT28C010-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128	e3	40	245	.0002 Amp	13.97 mm	150 ns	5	YES
X28HC256J-90	Intersil	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0			.0005 Amp	13.97 mm	90 ns	5	YES
AT28BV256-20JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	2	3.6 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	2.7 V		64	e3	40	245	.00005 Amp	13.97 mm	200 ns	3	YES
X28HC256JI-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel				QUAD			R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms	262144 bit	4.5 V							13.97 mm	90 ns	5
XC1704LPC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	4194304 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J44	3	3.6 V	4.572 mm		15 MHz	16.5862 mm	Not Qualified		4194304 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	16.5862 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.