QCCJ EEPROM 1,527

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28BV256-20JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES		8	CHIP CARRIER	LCC32,.45X.55			1.27 mm	85 Cel		32KX8	32K	-40 Cel				QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.6 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm		10 ms	262144 bit	2.7 V	THE PART EXISTS IN EEPROM3V	64					.00005 Amp	13.97 mm	200 ns	3
AT28HC256E-90JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		Matte Tin (Sn)		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm		10 ms	262144 bit	4.5 V	AUTOMATIC WRITE		e3	40	245			13.97 mm	90 ns	5
AT17LV002-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	2097152 words	3.3		3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs	90	1.27 mm	85 Cel		2MX1	2M	-40 Cel		MATTE TIN		QUAD		HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm	100000 Write/Erase Cycles	10 MHz	8.9662 mm	Not Qualified		2097152 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e3				.00035 Amp	8.9662 mm
AT17LV512-10JC	Atmel	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	524288 words	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs		1.27 mm	70 Cel		512KX1	512K	0 Cel		TIN LEAD		QUAD		HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		524288 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0		225			8.9662 mm
AT28C16-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	1 ms	16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0		225		.0001 Amp	13.97 mm	200 ns	5	YES
AT28C16-20JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	1 ms	16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0		225		.0001 Amp	13.97 mm	200 ns	5	YES
AT28HC256-70JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e3	40	245			13.97 mm	70 ns	5	YES
X28HC256JI-12T1	Intersil	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0				.0005 Amp	13.97 mm	120 ns	5	YES
AT28C64B-15JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	Tin/Lead (Sn/Pb)		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0	30	225		.0001 Amp	13.97 mm	150 ns	5	YES
AT28HC256E-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm			262144 bit	4.5 V			e3	40	245			13.97 mm	120 ns	5
XC18V01PC20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words	3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel		TIN LEAD		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified		1048576 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
AT28C256E-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm			262144 bit	4.5 V			e3	40	245			13.97 mm	150 ns	5
AT28C64B-20JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	Tin/Lead (Sn/Pb)		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0	30	225		.0001 Amp	13.97 mm	200 ns	5	YES
X28HC64JIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms	65536 bit	4.5 V			e3	30	245			13.97 mm	120 ns	5
XC18V01PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words	3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		128KX8	128K	-40 Cel		TIN LEAD		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified		1048576 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
X28HC64JIZ-12T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e3	30	245		.0002 Amp	13.97 mm	120 ns	5	YES
AT28C64B-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225		.0001 Amp	13.97 mm	200 ns	5	YES
AT28LV256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	2	3.465 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	3.135 V	AUTOMATIC WRITE	64	e0		225		.00002 Amp	13.97 mm	200 ns	3	YES
XC18V02PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words	3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel		Matte Tin (Sn)		QUAD			S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified		2097152 bit	3 V			e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
AT17F040-30VJI	Microchip Technology	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	20 mA	4194304 words	3.3		3/3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories		1.27 mm	85 Cel		4MX1	4M	-40 Cel		TIN LEAD		QUAD			S-PQCC-J20	2	3.63 V	4.572 mm		33 MHz	8.9662 mm	Not Qualified	.03 ms	4194304 bit	2.97 V			e0			NOR TYPE	.001 Amp	8.9662 mm
AT28BV64B-25JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	Tin/Lead (Sn/Pb)		QUAD			R-PQCC-J32	2	3.6 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	2.7 V	100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS	64	e0	30	225		.00002 Amp	13.97 mm	250 ns	3	YES
AT28C256-15JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225		.0002 Amp	13.97 mm	150 ns	5	YES
AT28C256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225		.0002 Amp	13.97 mm	200 ns	5	YES
AT28C256E-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225		.0002 Amp	13.97 mm	200 ns	5	YES
AT28C64B-25JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225		.0001 Amp	13.97 mm	250 ns	5	YES
AT28HC256-12JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225		.0003 Amp	13.97 mm	120 ns	5	YES
AT28HC64B-55JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225		.04 Amp	13.97 mm	55 ns	5	YES
AT28LV64B-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD			R-PQCC-J32	2	3.63 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	2.97 V	AUTOMATIC WRITE	64	e0		225		.00002 Amp	13.97 mm	200 ns	3	YES
X28HC256JIZ-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260			13.97 mm	150 ns	5
X28HC64JIZ-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms	65536 bit	4.5 V			e3	30	245			13.97 mm	90 ns	5
XC18V01PC20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words	3.3			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel		TIN LEAD		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified		1048576 bit	3 V			e0					8.9662 mm	15 ns
XC18V04PC44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words	3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		TIN LEAD		QUAD			S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified		4194304 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	16.5862 mm	20 ns
AT17LV256-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs	90	1.27 mm	85 Cel		256KX1	256K	-40 Cel		MATTE TIN		QUAD		HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm	100000 Write/Erase Cycles	10 MHz	8.9662 mm	Not Qualified		262144 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e3				.00015 Amp	8.9662 mm	80 ns
AT17LV512A-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	524288 words	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs	90	1.27 mm	85 Cel		512KX1	512K	-40 Cel		MATTE TIN	YES	QUAD		HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm	100000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified		524288 bit	3 V	ALSO OPERATES AT 5V SUPPLY		e3				.0002 Amp	8.9662 mm
AT28HC64B-70JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	65536 bit	4.5 V		64	e3	40	245		.0001 Amp	13.97 mm	70 ns	5	YES
CAT28LV65NI-25T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO		YES	QUAD			R-PQCC-J32	1	3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms	65536 bit	3 V	100000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	32					.0001 Amp	13.97 mm	250 ns	3	YES
CAT28C65BGI-12TE13	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified		65536 bit	4.5 V			e3					13.97 mm	120 ns	5
CAT28C65BNI-12T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO		YES	QUAD			R-PQCC-J32	1	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.425 mm	Not Qualified	5 ms	65536 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	32					.0001 Amp	13.965 mm	120 ns	5	YES
CAT28C256HNI-20TE13	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified		262144 bit	4.5 V			e0					13.97 mm	200 ns	5
CAT28C256HFN-15TE7	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified		262144 bit	4.5 V			e0					13.97 mm	150 ns	5
CAT28LV256NE-30T	Onsemi	EEPROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel		32KX8	32K	-40 Cel	NO			QUAD			R-PQCC-J32	1	3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	3 V		64					.00015 Amp	13.97 mm	300 ns	3	YES
CAT28C256HFN-25TE7	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified		262144 bit	4.5 V			e0					13.97 mm	250 ns	5
CAT28C17AG-20TE7	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		2KX8	2K	0 Cel		MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified		16384 bit	4.5 V			e3					13.97 mm	200 ns	5
CAT28LV256GE-30	Onsemi	EEPROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel		32KX8	32K	-40 Cel	NO	Tin (Sn)		QUAD			R-PQCC-J32		3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	3 V		64	e3				.00015 Amp	13.97 mm	300 ns	3	YES
CAT28C65BFNI-15TE7	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified		65536 bit	4.5 V			e0					13.97 mm	150 ns	5
CAT28LV256HN-35TE7	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		QUAD			R-PQCC-J32	3	3.6 V	3.55 mm			11.43 mm	Not Qualified		262144 bit	3 V			e0					13.97 mm	350 ns	3
CAT28C16AN-20TE13	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		2KX8	2K	0 Cel		TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified		16384 bit	4.5 V			e0					13.97 mm	200 ns	5
CAT28C256GI-15T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.425 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e3		260		.00015 Amp	13.965 mm	150 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.