QCCJ EEPROM 1,527

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT28C257HNA-12T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER			100	1.27 mm	105 Cel		32KX8	32K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		262144 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0				13.97 mm	120 ns	5
CAT28C512NA-12T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES	5	8	CHIP CARRIER	TSSOP32,.8,20	EEPROMs		1.27 mm	105 Cel		64KX8	64K	-40 Cel	NO			QUAD	R-PQCC-J32	1	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	524288 bit	4.5 V		128				.0002 Amp	13.97 mm	120 ns	5	YES
CAT28C64BFNI-12TE7	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V			e0				13.97 mm	120 ns	5
CAT28C65BG-12	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN	YES	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.425 mm	Not Qualified	5 ms	65536 bit	4.5 V		32	e3			.0001 Amp	13.965 mm	120 ns	5	YES
CAT28C65BHFNI-20TE7	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V			e0				13.97 mm	200 ns	5
CAT28C513NA-15	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	105 Cel		64KX8	64K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	128	e0			.0002 Amp	13.97 mm	150 ns	5	YES
CAT28LV256NI-20T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO			QUAD	R-PQCC-J32	1	3.6 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	3 V		64				.00015 Amp	13.97 mm	200 ns	3	YES
CAT28LV256NE-30	Onsemi	EEPROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel		32KX8	32K	-40 Cel	NO			QUAD	R-PQCC-J32	1	3.6 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	3 V		64				.00015 Amp	13.97 mm	300 ns	3	YES
CAT28C65BG-15TE7	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5			8	CHIP CARRIER				1.27 mm	70 Cel		8KX8	8K	0 Cel		MATTE TIN		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V			e3				13.97 mm	150 ns	5
CAT28C256HFNI-25TE7	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		262144 bit	4.5 V			e0				13.97 mm	250 ns	5
CAT28C257HNI-12T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER			100	1.27 mm	85 Cel		32KX8	32K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		262144 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0				13.97 mm	120 ns	5
CAT28LV256GI-30TE13	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		QUAD	R-PQCC-J32	3	3.6 V	3.55 mm		11.43 mm	Not Qualified		262144 bit	3 V			e3				13.97 mm	300 ns	3
CAT28C512GI-15T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		64KX8	64K	-40 Cel	NO	TIN		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	524288 bit	4.5 V		128	e3		260	.0002 Amp	13.97 mm	150 ns	5	YES
CAT28LV65GI20	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8 mA	8192 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN	YES	QUAD	R-PQCC-J32	3	3.6 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	3 V		32	e3			.0001 Amp	13.97 mm	200 ns	3	YES
CAT28C16AGA12	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	35 mA	2048 words		5		5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	105 Cel		2KX8	2K	-40 Cel	NO			QUAD	R-PQCC-J32		5.5 V	3.18 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	16384 bit	4.5 V				NOT SPECIFIED	260	.0001 Amp	13.97 mm	120 ns	5	YES
CAT28C513HNA-15T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5			8	CHIP CARRIER			100	1.27 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0				13.97 mm	150 ns	5
CAT28C256GI-12T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.425 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e3		260	.00015 Amp	13.965 mm	120 ns	5	YES
CAT28C64BHFNI-12TE13	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V			e0				13.97 mm	120 ns	5
CAT28C256HN-15T	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		262144 bit	4.5 V	100000 PROGRAM/ERASE CYCLES		e0				13.97 mm	150 ns	5
CAT28C64BN-90T	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO			QUAD	R-PQCC-J32	1	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.425 mm	Not Qualified	5 ms	65536 bit	4.5 V		32				.0001 Amp	13.965 mm	90 ns	5	YES
CAT28LV65G-25T	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8 mA	8192 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN	YES	QUAD	R-PQCC-J32		3.6 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	3 V		32	e3			.0001 Amp	13.97 mm	250 ns	3	YES
CAT28C64BN-12T	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.425 mm	Not Qualified	5 ms	65536 bit	4.5 V		32	e0		235	.0001 Amp	13.965 mm	120 ns	5	YES
CAT28LV256HN-35TE13	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	3.6 V	3.55 mm		11.43 mm	Not Qualified		262144 bit	3 V			e0				13.97 mm	350 ns	3
CAT28C513NI-15T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel		64KX8	64K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	128	e0			.0002 Amp	13.97 mm	150 ns	5	YES
CAT28C65BHNI-12TE7	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V			e0				13.97 mm	120 ns	5
CAT28C17ANA-20T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	35 mA	2048 words		5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	105 Cel		2KX8	2K	-40 Cel	NO		YES	QUAD	R-PQCC-J32	1	5.5 V	3.55 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	16384 bit	4.5 V						.0001 Amp	13.97 mm	200 ns	5	YES
CAT28C513G-15	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		64KX8	64K	0 Cel	NO	MATTE TIN		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	524288 bit	4.5 V		128	e3			.0002 Amp	13.97 mm	150 ns	5	YES
CAT28C64BNI-20TE13	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V			e0				13.97 mm	200 ns	5
CAT28C65BFN-15TE13	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5			8	CHIP CARRIER				1.27 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V			e0				13.97 mm	150 ns	5
CAT28LV256NI-25T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		3.6 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	262144 bit	3 V		64	e0		235	.00015 Amp	13.97 mm	250 ns	3	YES
CAT28LV65GA-25T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8 mA	8192 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	105 Cel		8KX8	8K	-40 Cel	NO		YES	QUAD	R-PQCC-J32		3.6 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	3 V		32	e3	NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	13.97 mm	250 ns	3	YES
CAT28C512HNA-12T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5			8	CHIP CARRIER			100	1.27 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0				13.97 mm	120 ns	5
CAT28LV64NA-35T	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		3.3			8	CHIP CARRIER			100	1.27 mm	105 Cel		8KX8	8K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	3.6 V	3.55 mm		11.43 mm	Not Qualified	5 ms	65536 bit	3 V	100000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				13.97 mm	350 ns	3
CAT28C256HFNI-20TE13	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		262144 bit	4.5 V			e0				13.97 mm	200 ns	5
CAT28LV64N-30TE13	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		3.3			8	CHIP CARRIER				1.27 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	3.6 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	3 V			e0				13.97 mm	300 ns	3
CAT28LV64NI-30	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		3.3			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	3.6 V	3.55 mm		11.43 mm	Not Qualified	5 ms	65536 bit	3 V			e0				13.97 mm	300 ns	3
CAT28C256HFN-20TE13	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		262144 bit	4.5 V			e0				13.97 mm	200 ns	5
CAT28C256NI-20	Onsemi	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		TIN LEAD		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		262144 bit	4.5 V	AUTOMATIC WRITE; PAGE WRITE		e0				13.97 mm	200 ns	5
CAT28C16AG-20T	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	35 mA	2048 words		5		5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN		QUAD	R-PQCC-J32		5.5 V	3.18 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms	16384 bit	4.5 V			e3		260	.0001 Amp	13.97 mm	200 ns	5	YES
M27C1024-90XC7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN		QUAD	S-PQCC-J44								1048576 bit				e3			.0001 Amp		80 ns	2.7
M28C16B-90K1TR	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	MATTE TIN		QUAD	R-PQCC-J32		5.5 V	3.56 mm		11.455 mm	Not Qualified		16384 bit	4.5 V		64	e3			.0001 Amp	13.995 mm	90 ns	5	YES
M28010-15RKA1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		2			8	CHIP CARRIER			10	1.27 mm	70 Cel		128KX8	128K	0 Cel				QUAD	R-PQCC-J32		2.4 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						13.995 mm	150 ns	3
M27C1024-15C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN		QUAD	S-PQCC-J44								1048576 bit				e3			.0001 Amp		100 ns	2.7
M28010-10WKA1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		128KX8	128K	0 Cel	NO	MATTE TIN		QUAD	R-PQCC-J32		3.6 V	3.56 mm		11.455 mm	Not Qualified	10 ms	1048576 bit	2.7 V		128	e3			.00003 Amp	13.995 mm	100 ns	3	YES
M27C1024-15C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN		QUAD	S-PQCC-J44								1048576 bit				e3			.0001 Amp		100 ns	2.7
M27C1024-55C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN		QUAD	S-PQCC-J44								1048576 bit				e3			.0001 Amp		55 ns	2.7
M27C256B-45C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		MATTE TIN		QUAD	R-PQCC-J32								262144 bit				e3			.0001 Amp		45 ns	2.7
M27C256B-15C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		MATTE TIN		QUAD	R-PQCC-J32								262144 bit				e3			.0001 Amp		150 ns	2.7

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.