QCCN EEPROM 57

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28C256-15LM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	125 Cel		3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD	QUAD			R-CQCC-N32		5.5 V	2.54 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	13.97 mm	150 ns	5	YES
AT28HC256-12LM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs	10	1.27 mm	125 Cel		3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD	QUAD			R-CQCC-N32	1	5.5 V	2.54 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	13.97 mm	120 ns	5	YES
AT28C010-12EM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs	10	1.27 mm	125 Cel		3-STATE	128KX8	128K	-55 Cel	NO	TIN LEAD	QUAD			R-CQCC-N32		5.5 V	2.54 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE; DATA RETENTION: 10 YEARS	128	e0			.0003 Amp	13.97 mm	120 ns	5	YES
AT28C010E-12EM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	125 Cel		3-STATE	128KX8	128K	-55 Cel	NO	TIN LEAD	QUAD	1	HARDWARE/SOFTWARE	R-CQCC-N32		5.5 V	2.54 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e0			.0003 Amp	13.97 mm	120 ns	5	YES
DS2433G+T&R	Maxim Integrated	EEPROM	INDUSTRIAL	2	QCCN	SQUARE		UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4096 words	5		3/5	1	CHIP CARRIER	SURF MNT 2,.25SQ		EEPROMs			85 Cel			4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD	QUAD			S-XQCC-N2		6 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	4096 bit	2.8 V			e4				6 mm
AT28C040-20LI	Atmel	EEPROM	INDUSTRIAL	44	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	YES	5	8	CHIP CARRIER	LCC44,.65SQ		EEPROMs		1.27 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel	NO	TIN LEAD	QUAD			S-CQCC-N44	1	5.5 V	2.74 mm			16.55 mm	Not Qualified	10 ms		4194304 bit	4.5 V	AUTOMATIC WRITE	256	e0			.003 Amp	16.55 mm	200 ns	5	YES
CAT28LV256GE-25T	Onsemi	EEPROM	AUTOMOTIVE	32	QCCN	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	125 Cel			32KX8	32K	-40 Cel	NO		QUAD			R-PQCC-N32		3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3	NOT SPECIFIED	NOT SPECIFIED	.00015 Amp	13.97 mm	250 ns	3	YES
CAT28LV256GI-30T	Onsemi	EEPROM	INDUSTRIAL	32	QCCN	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO		QUAD			R-PQCC-N32		3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3	NOT SPECIFIED	NOT SPECIFIED	.00015 Amp	13.97 mm	300 ns	3	YES
CAT28LV256GE-30T	Onsemi	EEPROM	AUTOMOTIVE	32	QCCN	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	125 Cel			32KX8	32K	-40 Cel	NO		QUAD			R-PQCC-N32		3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3	NOT SPECIFIED	NOT SPECIFIED	.00015 Amp	13.97 mm	300 ns	3	YES
CAT28LV256GA-30T	Onsemi	EEPROM	INDUSTRIAL	32	QCCN	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	105 Cel			32KX8	32K	-40 Cel	NO		QUAD			R-PQCC-N32		3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3	NOT SPECIFIED	NOT SPECIFIED	.00015 Amp	13.97 mm	300 ns	3	YES
CAT28LV256GA-25T	Onsemi	EEPROM	INDUSTRIAL	32	QCCN	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	105 Cel			32KX8	32K	-40 Cel	NO		QUAD			R-PQCC-N32		3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3	NOT SPECIFIED	NOT SPECIFIED	.00015 Amp	13.97 mm	250 ns	3	YES
CAT28LV256GI-25T	Onsemi	EEPROM	INDUSTRIAL	32	QCCN	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN	QUAD			R-PQCC-N32	3	3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3		260	.00015 Amp	13.97 mm	250 ns	3	YES
CAT28LV256GI-20T	Onsemi	EEPROM	INDUSTRIAL	32	QCCN	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN	QUAD			R-PQCC-N32	3	3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3		260	.00015 Amp	13.97 mm	200 ns	3	YES
XQR17V16CK44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCN	RECTANGULAR	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3.3			1	CHIP CARRIER		1				125 Cel			16MX1	16M	-55 Cel			QUAD			R-CQCC-N44		3.6 V			20 MHz					16777216 bit	3 V
XQR17V16CK44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCN	RECTANGULAR	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3.3			1	CHIP CARRIER		1				125 Cel			16MX1	16M	-55 Cel			QUAD			R-CQCC-N44		3.6 V			20 MHz					16777216 bit	3 V
X28C513EMB-12	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		QUAD			R-CQCC-N32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.425 mm		10 ms		524288 bit	4.5 V						.0005 Amp	13.965 mm	120 ns	5	YES
X28C512E-90	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	70 Cel			64KX8	64K	0 Cel	NO		QUAD			R-XQCC-N32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		90 ns		YES
78C18A150L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD	QUAD			R-XQCC-N32							Not Qualified			16384 bit				e0			.0009 Amp		150 ns		YES
IDT78C18A70L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD	QUAD			R-XQCC-N32							Not Qualified			16384 bit				e0			.0009 Amp		70 ns		YES
X28C513EM-25	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		QUAD			R-CQCC-N32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.425 mm		10 ms		524288 bit	4.5 V						.0005 Amp	13.965 mm	90 ns	5	YES
X28C513EM-20	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		QUAD			R-CQCC-N32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.425 mm		10 ms		524288 bit	4.5 V						.0005 Amp	13.965 mm	200 ns	5	YES
X28C010N-25	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.7		EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO		QUAD			R-XQCC-N32							Not Qualified			1048576 bit			256				.0005 Amp		250 ns		YES
X28C010E-25	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO		QUAD			R-XQCC-N32							Not Qualified			1048576 bit			256				.0005 Amp		250 ns		YES
78C18A100L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD	QUAD			R-XQCC-N32							Not Qualified			16384 bit				e0			.0009 Amp		100 ns		YES
IDT78C18A200L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD	QUAD			R-XQCC-N32							Not Qualified			16384 bit				e0			.0009 Amp		200 ns		YES
X28C513EM	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		QUAD			R-CQCC-N32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.425 mm		10 ms		524288 bit	4.5 V						.0005 Amp	13.965 mm	90 ns	5	YES
X28C512EM-25	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		QUAD			R-CQCC-N32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.425 mm		10 ms		524288 bit	4.5 V						.0005 Amp	13.965 mm	90 ns	5	YES
X28C512EMB-12	Renesas Electronics	EEPROM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO		QUAD			R-XQCC-N32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		120 ns		YES
X28C010NI-12	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.7		EEPROMs		1.27 mm	85 Cel			128KX8	128K	-40 Cel	NO		QUAD			R-XQCC-N32							Not Qualified			1048576 bit			256				.0005 Amp		120 ns		YES
X28C010NMB-15	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	CHIP CARRIER	LCC32,.45X.7			100	1.27 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel			QUAD			R-CQCC-N32		5.5 V	3.048 mm	100000 Write/Erase Cycles		11.43 mm		10 ms		1048576 bit	4.5 V		256				.0005 Amp	17.78 mm	150 ns	5	YES
X28C010NM-12	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	CHIP CARRIER	LCC32,.45X.7			100	1.27 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel			QUAD			R-CQCC-N32		5.5 V	3.048 mm	100000 Write/Erase Cycles		11.43 mm		10 ms		1048576 bit	4.5 V		256				.0005 Amp	17.78 mm	120 ns	5	YES
X28C513EMB-20	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		QUAD			R-CQCC-N32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.425 mm		10 ms		524288 bit	4.5 V						.0005 Amp	13.965 mm	200 ns	5	YES
X28C010NMB-12	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	CHIP CARRIER	LCC32,.45X.7			100	1.27 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel			QUAD			R-CQCC-N32		5.5 V	3.048 mm	100000 Write/Erase Cycles		11.43 mm		10 ms		1048576 bit	4.5 V		256				.0005 Amp	17.78 mm	120 ns	5	YES
X28C512EMB-90	Renesas Electronics	EEPROM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO		QUAD			R-XQCC-N32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		90 ns		YES
X28C010EI-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	85 Cel			128KX8	128K	-40 Cel	NO		QUAD			R-XQCC-N32							Not Qualified			1048576 bit			256				.0005 Amp		150 ns		YES
IDT78C18A90L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD	QUAD			R-XQCC-N32							Not Qualified			16384 bit				e0			.0009 Amp		90 ns		YES
78C18A120L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD	QUAD			R-XQCC-N32							Not Qualified			16384 bit				e0			.0009 Amp		120 ns		YES
X28C513EMB-15	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		QUAD			R-CQCC-N32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.425 mm		10 ms		524288 bit	4.5 V						.0005 Amp	13.965 mm	150 ns	5	YES
IDT78C18A100L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD	QUAD			R-XQCC-N32							Not Qualified			16384 bit				e0			.0009 Amp		100 ns		YES
X28C513EMB-25	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		QUAD			R-CQCC-N32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.425 mm		10 ms		524288 bit	4.5 V						.0005 Amp	13.965 mm	90 ns	5	YES
X28C010N-20	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.7		EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO		QUAD			R-XQCC-N32							Not Qualified			1048576 bit			256				.0005 Amp		200 ns		YES
78C18A70L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD	QUAD			R-XQCC-N32							Not Qualified			16384 bit				e0			.0009 Amp		70 ns		YES
78C18A75LB	Renesas Electronics	EEPROM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	125 Cel			2KX8	2K	-55 Cel	YES	TIN LEAD	QUAD			R-XQCC-N32							Not Qualified			16384 bit				e0			.0009 Amp		75 ns		YES
X28C512EI-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO		QUAD			R-XQCC-N32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		150 ns		YES
X28C010EI-25	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	85 Cel			128KX8	128K	-40 Cel	NO		QUAD			R-XQCC-N32							Not Qualified			1048576 bit			256				.0005 Amp		250 ns		YES
IDT78C18A120L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD	QUAD			R-XQCC-N32							Not Qualified			16384 bit				e0			.0009 Amp		120 ns		YES
X28C010N-15	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.7		EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO		QUAD			R-XQCC-N32							Not Qualified			1048576 bit			256				.0005 Amp		150 ns		YES
X28C513EI-20	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel	NO		QUAD			R-CQCC-N32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.425 mm		10 ms		524288 bit	4.5 V						.0005 Amp	13.965 mm	200 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.