QCCN EEPROM 57

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
X28C513EM-12	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		QUAD	R-CQCC-N32	5.5 V	3.05 mm	100000 Write/Erase Cycles	11.425 mm		10 ms	524288 bit	4.5 V			.0005 Amp	13.965 mm	120 ns	5	YES
IDT78C18A75LB	Renesas Electronics	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs		1.27 mm	125 Cel			2KX8	2K	-55 Cel	YES	TIN LEAD	QUAD	R-XQCC-N32					Not Qualified		16384 bit			e0	.0009 Amp		75 ns		YES
IDT78C18A150L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD	QUAD	R-XQCC-N32					Not Qualified		16384 bit			e0	.0009 Amp		150 ns		YES
X28C010N-12	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.7	EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO		QUAD	R-XQCC-N32					Not Qualified		1048576 bit		256		.0005 Amp		120 ns		YES
X28C513EM-15	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		QUAD	R-CQCC-N32	5.5 V	3.05 mm	100000 Write/Erase Cycles	11.425 mm		10 ms	524288 bit	4.5 V			.0005 Amp	13.965 mm	150 ns	5	YES
78C18A200L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD	QUAD	R-XQCC-N32					Not Qualified		16384 bit			e0	.0009 Amp		200 ns		YES
X28C010NM-15	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	CHIP CARRIER	LCC32,.45X.7		100	1.27 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel			QUAD	R-CQCC-N32	5.5 V	3.048 mm	100000 Write/Erase Cycles	11.43 mm		10 ms	1048576 bit	4.5 V	256		.0005 Amp	17.78 mm	150 ns	5	YES
78C18A90L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD	QUAD	R-XQCC-N32					Not Qualified		16384 bit			e0	.0009 Amp		90 ns		YES
X28C010E-20	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO		QUAD	R-XQCC-N32					Not Qualified		1048576 bit		256		.0005 Amp		200 ns		YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.