SOC EEPROM 39

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Programming Voltage (V)	Data Polling
DS2431P/TR	Dallas Semiconductor	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn)	DUAL	HARDWARE	R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260	3.94 mm		NO
DS2431P/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e0	20	240	3.94 mm
DS2431P+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed	DUAL	HARDWARE	R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260	3.94 mm		NO
DS2431P-A1+T	Analog Devices	EEPROM	AUTOMOTIVE	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	5	5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	125 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	4.5 V		e3	30	260	3.94 mm
DS2431P-A1+	Analog Devices	EEPROM	AUTOMOTIVE	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	5	5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	125 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	4.5 V		e3	30	260	3.94 mm
DS2431P	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		Tin/Lead (Sn/Pb)	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e0	20	240	3.94 mm
DS2431P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed	DUAL	HARDWARE	R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260	3.94 mm		NO
DS2430AP/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	SERIAL	ASYNCHRONOUS		256 words	5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		TIN LEAD	DUAL		R-PDSO-C6	1	6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0			3.94 mm
DS2430AP+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	SERIAL	ASYNCHRONOUS		256 words	5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3	30	260	3.94 mm
DS28EC20P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS	.9 mA	20480 words		5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	200000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	20480 bit	4 V		e3	30	260	3.94 mm
DS28EC20P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS	.9 mA	20480 words		5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	200000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	20480 bit	4 V		e3	30	260	3.94 mm
DS28E07P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words			1	SMALL OUTLINE			10	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL	HARDWARE	R-PDSO-C6	1	5.25 V	1.5 mm	10000 Write/Erase Cycles		3.94 mm			1-WIRE	1024 bit	3 V		e3	30	260	4.29 mm	3
DS2430AP	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	SERIAL	ASYNCHRONOUS		256 words	5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		Tin/Lead (Sn/Pb)	DUAL		R-PDSO-C6	1	6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0	20	245	3.94 mm
DS2430AP+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	SERIAL	ASYNCHRONOUS		256 words	5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3	30	260	3.94 mm
DS28E07P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words			1	SMALL OUTLINE			10	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL	HARDWARE	R-PDSO-C6	1	5.25 V	1.5 mm	10000 Write/Erase Cycles		3.94 mm			1-WIRE	1024 bit	3 V		e3	30	260	4.29 mm	3
DS28E01P-100+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-XDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260	3.94 mm
DS28E22P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		2048 words	3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			2KX1	2K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	2048 bit	2.97 V		e3	30	260	4.29 mm
DS28E15P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		512 words	3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			512X1	512	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	512 bit	2.97 V		e3	30	260	4.29 mm
DS28E22P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		2048 words	3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			2KX1	2K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	2048 bit	2.97 V		e3	30	260	4.29 mm
DS2432P/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e0			3.94 mm
DS2432P+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		MATTE TIN	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e3	30	260	3.94 mm
DS28E01P-100	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD	DUAL		R-XDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.937 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e0			4.2926 mm
DS28E01P-100+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-XDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260	3.94 mm
DS28E25P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		4096 words	3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	4096 bit	2.97 V		e3	30	260	4.29 mm
DS28E15P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		512 words	3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			512X1	512	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	512 bit	2.97 V		e3	30	260	4.29 mm
DS2432P	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD	DUAL		R-PDSO-C6		5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e0	20	240	3.94 mm
DS2432P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		MATTE TIN	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e3	30	260	3.94 mm
DS2432P-100-011	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	C BEND	SERIAL			256 words		3/5	4	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			256X4	256	-40 Cel			DUAL		R-PDSO-C6				50000 Write/Erase Cycles			Not Qualified			1024 bit
DS2432P-100-011+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	C BEND	SERIAL			256 words		3/5	4	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			256X4	256	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1			50000 Write/Erase Cycles			Not Qualified			1024 bit			e3	30	260
DS28E05P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		64 words	3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	64 bit	2.75 V		e3	30	260	4.29 mm
DS28E05P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		64 words	3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	64 bit	2.75 V		e3	30	260	4.29 mm
DS28E35P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	1024 bit	2.97 V		e3	30	260	4.29 mm
DS28E25P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		4096 words	3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	4096 bit	2.97 V		e3	30	260	4.29 mm
DS28E02P+	Analog Devices	EEPROM	OTHER	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	1.8	1.8/3.3	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.65 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	1.75 V		e3	30	260	3.94 mm
DS28E35P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	1024 bit	2.97 V		e3	30	260	4.29 mm
DS28E02P+T&R	Analog Devices	EEPROM	OTHER	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	1.8	1.8/3.3	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.65 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	1.75 V		e3	30	260	3.94 mm
DS28E01P-100+T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-40 Cel			DUAL		R-XDSO-C6		5.25 V	1.5 mm	50000 Write/Erase Cycles		3.93 mm	Not Qualified		1-WIRE	1024 bit	2.8 V			30	260	4.62 mm
DS2432P-W07+3	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	5		1	SMALL OUTLINE				1.27 mm	85 Cel			1KX1	1K	-40 Cel			DUAL		R-PDSO-C6		5.25 V	1.5 mm			3.76 mm			1-WIRE	1024 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED	3.94 mm
DS28E01P-100/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD	DUAL		R-XDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.937 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e0			4.2926 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.