SON EEPROM 769

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
DS2431Q+U	Analog Devices	EEPROM	INDUSTRIAL	6	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		256 words	3.3	3/5	4	SMALL OUTLINE	SOLCC6,.11,37		EEPROMs	40	.95 mm	85 Cel	NO	OPEN-DRAIN	256X4	256	-40 Cel	NO	Matte Tin (Sn) - annealed			DUAL		HARDWARE	R-PDSO-N6	1	5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260				NO
AT24CS32-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	5	1.8/5	8	SMALL OUTLINE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		e4	40	260	.000006 Amp	3 mm	5
93AA46CT-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	64 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.11,20	8	EEPROMs	200	.5 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel		NICKEL PALLADIUM GOLD		YES	DUAL	1	SOFTWARE	R-PDSO-N8	1	5.5 V		1000000 Write/Erase Cycles	3 MHz	2 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	1.8 V		e4	40	260	.000001 Amp	3 mm
DS2704G+	Analog Devices	EEPROM	COMMERCIAL EXTENDED	6	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS	.75 mA	128 words		3/5	8	SMALL OUTLINE	SOLCC6,.11,37		EEPROMs	10	.95 mm	85 Cel			128X8	128	-30 Cel		Matte Tin (Sn) - annealed			DUAL		SOFTWARE	S-XDSO-N6	1	5.5 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.5 V		e3	30	260	.000002 Amp
DS2704G+T&R	Analog Devices	EEPROM	COMMERCIAL EXTENDED	6	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS	.75 mA	128 words		3/5	8	SMALL OUTLINE	SOLCC6,.11,37		EEPROMs	10	.95 mm	85 Cel			128X8	128	-30 Cel		Matte Tin (Sn) - annealed			DUAL		SOFTWARE	S-XDSO-N6	1	5.5 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.5 V		e3	30	260	.000002 Amp
CAT93C56RD4A-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				105 Cel			128X16	128	-40 Cel		TIN LEAD			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	2048 bit	2.5 V		e0
CAT93C56ZD4E-G	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	128 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3			.00001 Amp
CAT93C66ZD4-1.8	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8				70 Cel			256X16	256	0 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	4096 bit	1.8 V		e3
CAT93C86RD4E-1.8REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				125 Cel			1KX16	1K	-40 Cel		TIN LEAD			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	16384 bit	1.8 V		e0
CAT1021ZD4I-45-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	256 words	5	5	8	SMALL OUTLINE	SOLCC8,.12,25		EEPROMs	100	.635 mm	85 Cel			256X8	256	-40 Cel			1010000R		DUAL		HARDWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.00006 Amp
CAT93C56ZD4A-1.8	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	S-XDSO-N8	1	6 V		1000000 Write/Erase Cycles	.25 MHz		Not Qualified		MICROWIRE	2048 bit	1.8 V		e3			.00001 Amp
CAT93C57ZD4I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				85 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	2048 bit	2.5 V		e3
CAT93C57ZD4A-1.8-T3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	128 words		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3			.00001 Amp
CAT93C76ZD4E-TE13REVA	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				125 Cel			512X16	512	-40 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	5.5 V			1 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e3
CAT1026ZD4I-28-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	256 words	3.3	3.3	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			256X8	256	-40 Cel			1010000R		DUAL		HARDWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.00005 Amp
CAT93C57ZD4A-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				105 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	2048 bit	1.8 V		e3
CAT93C86ZD4A-1.8REVC	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				105 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	16384 bit	1.8 V		e3
CAT93C66ZD4A-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8				105 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	4096 bit	1.8 V		e3
CAT93C57ZD4A-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	128 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3			.00001 Amp
CAT93C66ZD4A-T3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel			256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit						.00001 Amp
CAT93C57VP2I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	128 words		3/5	16	SMALL OUTLINE	SOLCC8,.11,20	8	EEPROMs	100	.5 mm	85 Cel			128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e4	30	260	.00001 Amp
CAT93C57ZD4A-1.8-T2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	128 words		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3			.00001 Amp
CAT93C66ZD4I-1.8-T3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	256 words		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel			256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit						.00001 Amp
CAT93C57ZD4I-1.8	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	S-XDSO-N8	1	6 V		1000000 Write/Erase Cycles	.25 MHz		Not Qualified		MICROWIRE	2048 bit	1.8 V		e3			.00001 Amp
CAT93C76RD4I-REVA	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				85 Cel			512X16	512	-40 Cel		TIN LEAD			DUAL			S-XDSO-N8	1	5.5 V			1 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e0
CAT93C57VP2I-T2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	128 words		3/5	16	SMALL OUTLINE	SOLCC8,.11,20	8	EEPROMs	100	.5 mm	85 Cel			128X16	128	-40 Cel					DUAL		SOFTWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit						.00001 Amp
CAT93C76RD4-1.8REVA	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				70 Cel			512X16	512	0 Cel		TIN LEAD			DUAL			S-XDSO-N8	1	5.5 V			1 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e0
CAT93C56ZD4E-T3	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	128 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3			.00001 Amp
CAT93C56RD4E-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				125 Cel			128X16	128	-40 Cel		TIN LEAD			DUAL			S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	2048 bit	1.8 V		e0
CAT93C86ZD4E-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				125 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	16384 bit	1.8 V		e3
CAT93C76RD4I-TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				85 Cel			512X16	512	-40 Cel		TIN LEAD			DUAL			S-XDSO-N8	1	5.5 V			1 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e0
CAT1026ZD4I-25-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	256 words	3	3	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			256X8	256	-40 Cel			1010000R		DUAL		HARDWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.00005 Amp
CAT1021ZD4I-30-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	256 words	3.3	3.3	8	SMALL OUTLINE	SOLCC8,.12,25		EEPROMs	100	.635 mm	85 Cel			256X8	256	-40 Cel			1010000R		DUAL		HARDWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.00006 Amp
CAT93C76ZD4-1.8REVA	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				70 Cel			512X16	512	0 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	5.5 V			1 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e3
CAT93C56ZD4I-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				85 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	2048 bit	1.8 V		e3
CAT93C86RD4-1.8REVC	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				70 Cel			1KX16	1K	0 Cel		TIN LEAD			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	16384 bit	1.8 V		e0
CAT93C66ZD4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel			256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit						.00001 Amp
CAT1021ZD4I-42-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	256 words	5	5	8	SMALL OUTLINE	SOLCC8,.12,25		EEPROMs	100	.635 mm	85 Cel			256X8	256	-40 Cel			1010000R		DUAL		HARDWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.00006 Amp
CAT93C86RD4A-1.8TE13REVC	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				105 Cel			1KX16	1K	-40 Cel		TIN LEAD			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	16384 bit	1.8 V		e0
CAT93C86ZD4A-1.8-GT2C	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	1024 words		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel			1KX16	1K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit						.00001 Amp
CAT93C56ZD4A-1.8-T3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel			128X16	128	-40 Cel					DUAL		SOFTWARE	R-PDSO-N8		5.5 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V				.00001 Amp
CAT93C86ZD4E-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL		HARDWARE/SOFTWARE	S-XDSO-N8	1	6 V		1000000 Write/Erase Cycles	.5 MHz		Not Qualified		MICROWIRE	16384 bit	1.8 V		e3			.00001 Amp
CAT93C66ZD4E-T3	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel			256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit						.00001 Amp
CAT93C76RD4I-1.8TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				85 Cel			512X16	512	-40 Cel		TIN LEAD			DUAL			S-XDSO-N8	1	5.5 V			3 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e0
CAT93C57ZD4I-1.8-T2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	128 words		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3			.00001 Amp
CAT93C57ZD4-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				70 Cel			128X16	128	0 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	2048 bit	1.8 V		e3
CAT34C02VP2IT5	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		1 mA	256 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			256X8	256	-40 Cel			1010DDDR		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT93C66ZD4-TE13	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8				70 Cel			256X16	256	0 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	4096 bit	2.5 V		e3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.