SON EEPROM 769

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Endurance	Maximum Clock Frequency (fCLK)	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current
CAT93C86RD4I-REVC	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				85 Cel	1KX16	1K	-40 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	6 V		1 MHz	Not Qualified		MICROWIRE	16384 bit	2.5 V		e0
CAT1021ZD4I-28-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	256 words	3.3	3.3	8	SMALL OUTLINE	SOLCC8,.12,25		EEPROMs	100	.635 mm	85 Cel	256X8	256	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	2048 bit				.00006 Amp
CAT93C56ZD4I-T3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	128 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	2048 bit			e3	.00001 Amp
CAT1027ZD4I-25-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	256 words	3	3	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel	256X8	256	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	2048 bit				.00006 Amp
CAT34C02VP2I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		1 mA	256 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	2048 bit				.000001 Amp
CAT1026ZD4I-30-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	256 words	3.3	3.3	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel	256X8	256	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	2048 bit				.00005 Amp
CAT93C57ZD4E-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	S-XDSO-N8	1	6 V	1000000 Write/Erase Cycles	.25 MHz	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3	.00001 Amp
CAT93C56ZD4I-1.8-G	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	128 words		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	2048 bit				.00001 Amp
CAT93C56RD4I-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				85 Cel	128X16	128	-40 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	6 V		.25 MHz	Not Qualified		MICROWIRE	2048 bit	1.8 V		e0
CAT93C86ZD4E-1.8T3C	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	1024 words		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel	1KX16	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	16384 bit				.00001 Amp
CAT93C86RD4-1.8TE13REVC	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				70 Cel	1KX16	1K	0 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	6 V		.5 MHz	Not Qualified		MICROWIRE	16384 bit	1.8 V		e0
CAT93C56ZD4A-G	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V		.00001 Amp
CAT93C66ZD4E-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel	256X16	256	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	4096 bit				.00001 Amp
CAT1026ZD4I-30-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	256 words	3.3	3.3	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel	256X8	256	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	2048 bit				.00005 Amp
CAT93C56ZD4E-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				125 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL		S-XDSO-N8	1	6 V		.25 MHz	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3
CAT93C86RD4E-TE13REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				125 Cel	1KX16	1K	-40 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	6 V		1 MHz	Not Qualified		MICROWIRE	16384 bit	2.5 V		e0
CAT93C57ZD4A-1.8	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	S-XDSO-N8	1	6 V	1000000 Write/Erase Cycles	.25 MHz	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3	.00001 Amp
CAT93C66ZD4I-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel	256X16	256	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	4096 bit				.00001 Amp
CAT93C57VP2I-T3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	128 words		3/5	16	SMALL OUTLINE	SOLCC8,.11,20	8	EEPROMs	100	.5 mm	85 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	2048 bit				.00001 Amp
CAT93C86ZD4E-1.8TE13REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				125 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL		S-XDSO-N8	1	6 V		.5 MHz	Not Qualified		MICROWIRE	16384 bit	1.8 V		e3
CAT93C56ZD4A-T3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V		.00001 Amp
CAT93C46RZD4I	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	64 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel	64X16	64	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	1024 bit				.00001 Amp
CAT93C56RD4E-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				125 Cel	128X16	128	-40 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	6 V		.25 MHz	Not Qualified		MICROWIRE	2048 bit	1.8 V		e0
CAT93C56ZD4I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL		S-XDSO-N8	1	6 V		.5 MHz	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3
CAT93C86ZD4E-1.8REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				125 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL		S-XDSO-N8	1	6 V		.5 MHz	Not Qualified		MICROWIRE	16384 bit	1.8 V		e3
CAT93C86ZD4I-1.8	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-XDSO-N8	1	6 V	1000000 Write/Erase Cycles	.5 MHz	Not Qualified		MICROWIRE	16384 bit	1.8 V		e3	.00001 Amp
CAT93C57ZD4E-1.8-T2	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	128 words		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	2048 bit			e3	.00001 Amp
CAT93C57ZD4I	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	S-XDSO-N8	1	6 V	1000000 Write/Erase Cycles	.5 MHz	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3	.00001 Amp
CAT93C66VP2I	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE	SOLCC8,.11,20	8	EEPROMs	100	.5 mm	85 Cel	256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	4096 bit			e3	.00001 Amp
CAT93C56ZD4E-1.8-G	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V		.00001 Amp
CAT93C57ZD4E-1.8-T3	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	128 words		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	2048 bit			e3	.00001 Amp
CAT93C56ZD4A-1.8-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V		.00001 Amp
CAT93C86ZD4A-T3C	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	1024 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel	1KX16	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	16384 bit				.00001 Amp
CAT93C57ZD4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	128 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	2048 bit			e3	.00001 Amp
CAT93C66RD4A-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8				105 Cel	256X16	256	-40 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	6 V		.5 MHz	Not Qualified		MICROWIRE	4096 bit	2.5 V		e0
CAT93C56RD4E-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				125 Cel	128X16	128	-40 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	6 V		.5 MHz	Not Qualified		MICROWIRE	2048 bit	2.5 V		e0
CAT93C76ZD4I-1.8TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				85 Cel	512X16	512	-40 Cel	MATTE TIN		DUAL		S-XDSO-N8	1	5.5 V		3 MHz	Not Qualified		MICROWIRE	8192 bit	1.8 V		e3
CAT93C57ZD4-TE13	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				70 Cel	128X16	128	0 Cel	MATTE TIN		DUAL		S-XDSO-N8	1	6 V		.5 MHz	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3
CAT93C66ZD4A-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel	256X16	256	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	4096 bit				.00001 Amp
CAT93C56ZD4E-1.8-T3	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	128 words		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	2048 bit				.00001 Amp
CAT93C57ZD4E-1.8-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	128 words		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	2048 bit			e3	.00001 Amp
CAT93C57ZD4A	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	S-XDSO-N8	1	6 V	1000000 Write/Erase Cycles	.5 MHz	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3	.00001 Amp
CAT93C66RD4A-1.8	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8				105 Cel	256X16	256	-40 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	6 V		.25 MHz	Not Qualified		MICROWIRE	4096 bit	1.8 V		e0
CAT93C66ZD4I-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8				85 Cel	256X16	256	-40 Cel	MATTE TIN		DUAL		S-XDSO-N8	1	6 V		.25 MHz	Not Qualified		MICROWIRE	4096 bit	1.8 V		e3
CAT34C02VP2I-G	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		1 mA	256 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	2048 bit				.000001 Amp
CAT93C56ZD4I-1.8-T2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V		.00001 Amp
CAT93C56ZD4I-1.8-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V		.00001 Amp
CAT93C66ZD4I-T3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	85 Cel	256X16	256	-40 Cel			DUAL	SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		MICROWIRE	4096 bit				.00001 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.