SON EEPROM 769

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Endurance	Maximum Clock Frequency (fCLK)	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current
CAT24C32ZD2I-G	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	4096 words		2/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	85 Cel	4KX8	4K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	32768 bit		e3	.000001 Amp
CAT24FC65RD2I	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	85 Cel	8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e0	.000001 Amp
CAT24FC17GD4I	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	2048 words		3/5	8	SMALL OUTLINE	SOLCC8,.12,25	EEPROMs	100	.635 mm	85 Cel	2KX8	2K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	16384 bit			.000001 Amp
CAT24FC64ZD2E-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	125 Cel	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e3	.00001 Amp
CAT24FC16ZD4E-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	2/5	8	SMALL OUTLINE	SOLCC8,.12,25	EEPROMs	100	.635 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	S-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	.1 MHz	Not Qualified	5 ms	I2C	16384 bit	1.8 V	e3	.00001 Amp
CAT24FC32RD2E-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	4096 words		3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	125 Cel	4KX8	4K	-40 Cel	Tin/Lead (Sn/Pb)	1010DDDR	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	32768 bit		e0	.00001 Amp
CAT25160HU2E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	2048 words		2/5	8	SMALL OUTLINE	SOLCC8,.08,20	EEPROMs	100	.5 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	16384 bit		e3	.000002 Amp
CAT24FC16RD4E-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	2/5	8	SMALL OUTLINE	SOLCC8,.12,25	EEPROMs	100	.635 mm	125 Cel	2KX8	2K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	S-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	.1 MHz	Not Qualified	5 ms	I2C	16384 bit	1.8 V	e0	.00001 Amp
CAT24FC17GD4E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	2048 words		3/5	8	SMALL OUTLINE	SOLCC8,.12,25	EEPROMs	100	.635 mm	125 Cel	2KX8	2K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	16384 bit			.00001 Amp
CAT24C64VP2E-G	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	8192 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel	8KX8	8K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	65536 bit			.000002 Amp
CAT24FC66RD2I	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	85 Cel	8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e0	.000001 Amp
CAT24FC17RD4E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.12,25	EEPROMs	100	.635 mm	125 Cel	2KX8	2K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	S-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	.1 MHz	Not Qualified	5 ms	I2C	16384 bit	1.8 V	e0	.00001 Amp
CAT24C21ZD4I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	3		8	SMALL OUTLINE					85 Cel	128X8	128	-40 Cel	MATTE TIN		DUAL		S-XDSO-N8	1	5.5 V		.4 MHz	Not Qualified	5 ms	I2C	1024 bit	2.5 V	e3
CAT24FC66ZD2I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	85 Cel	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e3	.000001 Amp
CAT25080HU2I	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	1024 words		2/5	8	SMALL OUTLINE	SOLCC8,.08,20	EEPROMs	100	.5 mm	85 Cel	1KX8	1K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	8192 bit		e3	.000002 Amp
CAT25080HU2I-G	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	1024 words		2/5	8	SMALL OUTLINE	SOLCC8,.08,20	EEPROMs	100	.5 mm	85 Cel	1KX8	1K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	8192 bit		e3	.000002 Amp
CAT24C32ZD2E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	4096 words		2/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	125 Cel	4KX8	4K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	32768 bit			.000002 Amp
CAT24FC66ZD2I	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	85 Cel	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e3	.000001 Amp
CAT25040VP2I-G	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	512 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel	512X8	512	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		SPI	4096 bit			.000002 Amp
CAT24FC17GD4I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	2048 words		3/5	8	SMALL OUTLINE	SOLCC8,.12,25	EEPROMs	100	.635 mm	85 Cel	2KX8	2K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	16384 bit			.000001 Amp
CAT25020VP2I-G	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	256 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel	256X8	256	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		SPI	2048 bit			.000002 Amp
CAT24FC64RD2I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	85 Cel	8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e0	.000001 Amp
CAT25320HU3E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	4096 words		3/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel	4KX8	4K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	32768 bit		e3	.000002 Amp
CAT25320HU3E-G	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	4096 words		3/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel	4KX8	4K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	32768 bit		e3	.000002 Amp
CAT25010VP2E-G	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	128 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel	128X8	128	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		SPI	1024 bit			.000002 Amp
CAT25320HU3I	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	4096 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel	4KX8	4K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	32768 bit		e3	.000001 Amp
CAT25080VP2I-G	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	1024 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel	1KX8	1K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	8192 bit		e3	.000002 Amp
CAT24C21RD4I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	3		8	SMALL OUTLINE					85 Cel	128X8	128	-40 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	5.5 V		.4 MHz	Not Qualified	5 ms	I2C	1024 bit	2.5 V	e0
CAT24FC17ZD4E-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.12,25	EEPROMs	100	.635 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	S-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	.1 MHz	Not Qualified	5 ms	I2C	16384 bit	1.8 V	e3	.00001 Amp
CAT25160VP2E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	2048 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	16384 bit		e3	.000002 Amp
CAT25320VP2E-G	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	4096 words		3/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel	4KX8	4K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	32768 bit		e3	.000002 Amp
CAT24FC64ZD2I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	85 Cel	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e3	.000001 Amp
CAT25160HU2E-G	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	2048 words		2/5	8	SMALL OUTLINE	SOLCC8,.08,20	EEPROMs	100	.5 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	16384 bit		e3	.000002 Amp
CAT24FC32RD2I	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	4096 words		3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	85 Cel	4KX8	4K	-40 Cel	Tin/Lead (Sn/Pb)	1010DDDR	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	32768 bit		e0	.000001 Amp
CAT24C21ZD4I-REVB	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	3		8	SMALL OUTLINE					85 Cel	128X8	128	-40 Cel	MATTE TIN		DUAL		S-XDSO-N8	1	5.5 V		.4 MHz	Not Qualified	5 ms	I2C	1024 bit	2.5 V	e3
CAT24FC32ZD2E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	4096 words		3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	125 Cel	4KX8	4K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	32768 bit			.00001 Amp
CAT24FC65RD2A	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	8192 words		3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	105 Cel	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	1010DDDR	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	65536 bit		e0	.000001 Amp
CAT24FC66ZD2E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	125 Cel	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e3	.00001 Amp
CAT24FC65RD2I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	85 Cel	8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e0	.000001 Amp
CAT24C03VP2I	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		1 mA	256 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	2048 bit			.000001 Amp
CAT24C32VP2I-G	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	4096 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel	4KX8	4K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	32768 bit		e3	.000001 Amp
CAT25040VP2E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	512 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel	512X8	512	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		SPI	4096 bit			.000002 Amp
CAT25010VP2I	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	128 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel	128X8	128	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		SPI	1024 bit			.000002 Amp
CAT24C128HU3I	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	16384 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel	16KX8	16K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	131072 bit		e3	.000001 Amp
CAT24FC65ZD2A-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	8192 words		3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	105 Cel	8KX8	8K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8			1000000 Write/Erase Cycles		Not Qualified		I2C	65536 bit			.000001 Amp
CAT24FC65RD2E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	125 Cel	8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	1 MHz	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e0	.00001 Amp
CAT24FC17RD4I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.12,25	EEPROMs	100	.635 mm	85 Cel	2KX8	2K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	S-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	.1 MHz	Not Qualified	5 ms	I2C	16384 bit	1.8 V	e0	.000001 Amp
CAT24FC17ZD4I	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.12,25	EEPROMs	100	.635 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	S-XDSO-N8		5.5 V	1000000 Write/Erase Cycles	.1 MHz	Not Qualified	5 ms	I2C	16384 bit	1.8 V	e3	.000001 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.