TSOP EEPROM 37

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
24FC64FT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		5	2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.55 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V		e3			.000001 Amp	2.9 mm		5
AT24CS32-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words		5	1.8/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		e3			.000006 Amp	2.9 mm		5
AT28HC256E-90TU-T	Microchip Technology	EEPROM	INDUSTRIAL	28	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE, THIN PROFILE				.55 mm	85 Cel			32KX8	32K	-40 Cel				DUAL			R-PDSO-G28		5.5 V	1.2 mm			8 mm		10 ms		262144 bit	4.5 V						11.8 mm	90 ns	5
AT24C01B-TSU-T	Microchip Technology	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words		5		8	SMALL OUTLINE, THIN PROFILE				.95 mm	85 Cel			128X8	128	-40 Cel				DUAL			R-PDSO-G5		5.5 V	1.1 mm		1 MHz	1.6 mm		5 ms	I2C	1024 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		2.9 mm
NV24C16SNVLT3G	Onsemi	EEPROM	AUTOMOTIVE	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	2048 words		3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37		100	.95 mm	125 Cel			2KX8	2K	-40 Cel			1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	1.5 mm		4 ms	I2C	16384 bit	1.7 V			NOT SPECIFIED	260	.000002 Amp	3 mm
NV24C32DTVLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP8,.25			.65 mm	125 Cel	NO		128X32	32K	-40 Cel	NO	NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		4 ms	I2C	32768 bit	1.7 V	32	e4	30	260	.000002 Amp	4.4 mm			YES
NV24C04SNVLT3G	Onsemi	EEPROM	AUTOMOTIVE	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	512 words		3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37		100	.95 mm	125 Cel			512X8	512	-40 Cel			1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	1.5 mm		4 ms	I2C	4096 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
NV24C08SNVLT3G	Onsemi	EEPROM	AUTOMOTIVE	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	1024 words		3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37		100	.95 mm	125 Cel			1KX8	1K	-40 Cel			1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	1.5 mm		4 ms	I2C	8192 bit	1.7 V			NOT SPECIFIED	260	.000002 Amp	3 mm
NV24C02SNVLT3G	Onsemi	EEPROM	AUTOMOTIVE	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	2048 words		3.3		1	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37		100	.95 mm	125 Cel			2KX1	2K	-40 Cel			1010XXXR	DUAL		HARDWARE	R-PDSO-G5		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	1.5 mm		4 ms	I2C	2048 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
CAT24C32BTSI-T3	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words		1.8		8	SMALL OUTLINE, THIN PROFILE				.95 mm	85 Cel			4KX8	4K	-40 Cel				DUAL			R-PDSO-G5		5.5 V	1.1 mm		.4 MHz	1.5 mm		4 ms	I2C	32768 bit	1.55 V						3 mm
CAT24C05TDI-G	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	512 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			512X8	512	-40 Cel			101000MR	DUAL		HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24AA04TDI	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	512 words			1.8/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			512X8	512	-40 Cel			101000MR	DUAL		HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24C00GTBI	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		2 mA	16 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			16X8	16	-40 Cel			1010XXXR	DUAL			R-PDSO-G5				10000000 Write/Erase Cycles			Not Qualified		I2C							.000001 Amp
CAT24AA04TDI-G	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	512 words			1.8/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			512X8	512	-40 Cel			101000MR	DUAL		HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24AA02TDI-G	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	256 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			256X8	256	-40 Cel			1010000R	DUAL		HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT24AA01TDI	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	128 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			128X8	128	-40 Cel			1010000R	DUAL		HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit						.000001 Amp
CAT24AA08TDI-G	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	1024 words			1.8/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			1KX8	1K	-40 Cel			10100MMR	DUAL		HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit						.000001 Amp
CAT24C05TDI	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	512 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			512X8	512	-40 Cel			101000MR	DUAL		HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24C03TDI-G	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	256 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			256X8	256	-40 Cel			1010000R	DUAL		HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT24C00GTBE	Onsemi	EEPROM	AUTOMOTIVE	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		2 mA	16 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel			16X8	16	-40 Cel			1010XXXR	DUAL			R-PDSO-G5				10000000 Write/Erase Cycles			Not Qualified		I2C							.00001 Amp
CAT24C00GTBI-TE13	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		2 mA	16 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			16X8	16	-40 Cel			1010XXXR	DUAL			R-PDSO-G5				10000000 Write/Erase Cycles			Not Qualified		I2C							.000001 Amp
CAT24AA01TDI-G	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	128 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			128X8	128	-40 Cel			1010000R	DUAL		HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit						.000001 Amp
CAT24C03TDI	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	256 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			256X8	256	-40 Cel			1010000R	DUAL		HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT24AA08TDI	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	1024 words			1.8/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			1KX8	1K	-40 Cel			10100MMR	DUAL		HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit						.000001 Amp
CAT24C00GTBE-TE13	Onsemi	EEPROM	AUTOMOTIVE	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		2 mA	16 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel			16X8	16	-40 Cel			1010XXXR	DUAL			R-PDSO-G5				10000000 Write/Erase Cycles			Not Qualified		I2C							.00001 Amp
XC17S40XLVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25,20	OTP ROMs		1.27 mm	70 Cel		3-STATE	330696X1	330696	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified			330696 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC17V01VOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel			1MX1	1M	-40 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			1048576 bit	3 V		e3	30	260		4.9 mm
XC17V01VO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel		3-STATE	1MX1	1M	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm		15 MHz	3.9 mm	Not Qualified			1048576 bit	3 V		e0	30	225	.001 Amp	4.9 mm
XC17S15XLVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		197728 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel			197728X1	197728	-40 Cel		TIN LEAD		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			197728 bit	3 V		e0	30	225		4.9 mm
XC17V01VO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm		15 MHz	3.9 mm	Not Qualified			1048576 bit	3 V		e0	30	225	.001 Amp	4.9 mm
XC17S15XLVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		197728 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			197728X1	197728	0 Cel		TIN LEAD		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			197728 bit	3 V		e0	30	225		4.9 mm
XC17S40XLVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		330696 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			330696X1	330696	0 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			330696 bit	3 V		e3	30	260		4.9 mm
XC17S40XLVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25,20	OTP ROMs		1.27 mm	85 Cel		3-STATE	330696X1	330696	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified			330696 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC17S15XLVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		197728 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			197728X1	197728	0 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			197728 bit	3 V		e3	30	260		4.9 mm
XC17V01VOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			1MX1	1M	0 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			1048576 bit	3 V		e3	30	260		4.9 mm
XC17S15XLVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		197728 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel			197728X1	197728	-40 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			197728 bit	3 V		e3	30	260		4.9 mm
XC17S40XLVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		330696 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel			330696X1	330696	-40 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			330696 bit	3 V		e3	30	260		4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.