TSSOP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT24WC01GZI-1.8REV-F	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	85 Cel	128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24C01BUA-TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	105 Cel	128X8	128	-40 Cel		TIN LEAD		DUAL			R-PDSO-G8		6 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V			e0			.000001 Amp	4.4 mm
CAT24WC03Z-1.8	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	70 Cel	256X8	256	0 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e3			.0000009 Amp	3 mm
CAT24WC01YIREV-E	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	128X8	128	0 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC04GY-TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	512X8	512	0 Cel			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT24C64ZE-T3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		100	.65 mm	125 Cel	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			e3			.000005 Amp	3 mm
CAT24FC66UA	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	8192 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	105 Cel	8KX8	8K	-40 Cel		Tin/Lead (Sn/Pb)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit				e0			.000001 Amp
CAT24WC01ZREV-F	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	70 Cel	128X8	128	0 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25C11GZA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	105 Cel	128X8	128	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			S-PDSO-G8		6 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V			e4	40	260		3 mm
CAT25C65U14A-TE13	Onsemi	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	100	.65 mm	105 Cel	8KX8	8K	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G14		6 V	1.2 mm	1000000 Write/Erase Cycles	3 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	2.5 V			e0			.00001 Amp	5 mm
CAT24WC01GYI-TE13REV-C	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel	128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC01ZEREV-F	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	70 Cel	128X8	128	0 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25020YA-T3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	256X8	256	-40 Cel		MATTE TIN		DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V			e3				4.4 mm
CAT24WC04GZE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	125 Cel	512X8	512	-40 Cel			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT25C11GYI-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		6 V	1.2 mm		1 MHz	3 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V			e4				4.4 mm
CAT25C03U-1.8	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	70 Cel	256X8	256	0 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	2048 bit	1.8 V			e0				4.4 mm
CAT24WC04UA-1.8TE13REV-F	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	105 Cel	512X8	512	-40 Cel			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT24WC02UAREV-C	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	105 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC02UEREV-C	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC04UI-TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel	512X8	512	-40 Cel			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT25C03RE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	125 Cel	256X8	256	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e0				3 mm
CAT24WC05RI	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	85 Cel	512X8	512	-40 Cel		TIN LEAD	1010DDMR	DUAL		HARDWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V			e0			.0000009 Amp	3 mm
CAT25C11GYA	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	105 Cel	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		6 V	1.2 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e4				4.4 mm
CAT25C03GZA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	105 Cel	256X8	256	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			S-PDSO-G8		6 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	SPI	2048 bit	1.8 V			e4	40	260		3 mm
CAT24WC01GYE-TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25640YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V	100 YEAR DATA RETENTION		e4	30	260	.000002 Amp	4.4 mm
CAT24C16ZI	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3		2/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	85 Cel	16KX1	16K	-40 Cel		MATTE TIN	1010MMMR	DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e3			.000001 Amp	3 mm
CAT24WC02GZAREV-F	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	105 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC01Y-1.8REV-E	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	128X8	128	0 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC01UI	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel	128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25010YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e4	30	260	.000002 Amp	4.4 mm
CAT25C11GYE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		6 V	1.2 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e4				4.4 mm
CAT24C16YE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3		2/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	16KX1	16K	-40 Cel		MATTE TIN	1010MMMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e3			.000002 Amp	4.4 mm
CAT24WC02U-1.8	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	256X8	256	0 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC01GZE-TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25020RE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	256X8	256	-40 Cel		TIN LEAD		DUAL			S-PDSO-G8	1	6 V	1.1 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e0				3 mm
CAT24WC05GY-1.8	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	512X8	512	0 Cel			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.0000009 Amp
CAT25C11GZ	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	128X8	128	0 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			S-PDSO-G8		6 V	1.1 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e4	40	260		3 mm
CAT25C03GYA-TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	105 Cel	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		6 V	1.2 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e4				4.4 mm
CAT25020R-1.8	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	256X8	256	0 Cel		TIN LEAD		DUAL			S-PDSO-G8	1	6 V	1.1 mm		1 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V			e0				3 mm
CAT25C03R-TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	70 Cel	256X8	256	0 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e0				3 mm
CAT24WC02GYI-TE13REV-C	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25C11U	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	70 Cel	128X8	128	0 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e0			.000001 Amp	4.4 mm
CAT25C64Y14A-1.8	Onsemi	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	100	.65 mm	105 Cel	8KX8	8K	-40 Cel		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G14		6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V			e3			.00001 Amp	5 mm
CAT28C512H-15T	Onsemi	EEPROM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	EEPROMs		.5 mm	70 Cel	64KX8	64K	0 Cel	NO			DUAL			R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		524288 bit	4.5 V		128	e3	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	18.4 mm	150 ns	5	YES
CAT24WC01GZE-1.8TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC01RE-1.8TE13REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC02ZA-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	105 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.