TSSOP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
XCF01SVOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel			1MX1	1M	-40 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	6.5024 mm
XCF32PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	33554432 words	1.8	1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	20	.5 mm	85 Cel			32MX1	32M	-40 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles		12 mm	Not Qualified			33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	18.45 mm
XCF02SVOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	2097152 words	3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel			2MX1	2M	-40 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			2097152 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	6.5024 mm
XCF04SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4194304 words	3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories		.65 mm	85 Cel			4MX1	4M	-40 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm		33 MHz	4.4 mm	Not Qualified			4194304 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	240	NOR TYPE	.001 Amp	6.5024 mm
XCF04SVOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			4MX1	4M	-40 Cel	MATTE TIN		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			4194304 bit	3 V		e3					6.5024 mm
24LC64-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3				.000001 Amp	4.4 mm	4.5
XCF02SVOG20CES	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			2MX1	2M	-40 Cel	MATTE TIN		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			2097152 bit	3 V		e3					6.5024 mm
XCF02SVOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			2MX1	2M	-40 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			2097152 bit	3 V		e3	30	260			6.5024 mm
XCF01SVOG20CES	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			1MX1	1M	-40 Cel	MATTE TIN		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			1048576 bit	3 V		e3					6.5024 mm
XCF01SVOG20C0100	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			1MX1	1M	-40 Cel			DUAL			R-PDSO-G20		3.6 V	1.19 mm			4.4 mm				1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		NOT SPECIFIED	NOT SPECIFIED			6.5024 mm
XCF01SVOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			1MX1	1M	-40 Cel	MATTE TIN		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			1048576 bit	3 V		e3					6.5024 mm
AT24CM01-XHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	5	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel	NO	OPEN-DRAIN	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V		e4	40	260		.000001 Amp	4.4 mm
24LC256-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3	40	260		.000005 Amp	4.4 mm	4.5
AT24C256C-XHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	ALSO OPERATES 1.7V TO 5.5V @0.4MHZ	e4				.000006 Amp	4.4 mm	3
AT25256B-XHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	20 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ	e4	40	260		.000005 Amp	4.4 mm	5
AT21CS01-STUM10-T	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	128 words	1.8		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236			100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel	MATTE TIN	1010DDDR	DUAL	1		R-PDSO-G3	1	3.6 V	1.12 mm	1000000 Write/Erase Cycles		1.3 mm		5 ms	I2C	1024 bit	1.7 V		e3	40	260		.0000025 Amp	2.9 mm	1.8
CAT24C256YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			32KX8	32K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	100 YEAR DATA RETENTION	e4	NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	4.4 mm
AT25256B-XHL-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	20 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	4.5 V	2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz	e4				.000005 Amp	4.4 mm	5
AT24C02D-XHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words	3	1.8/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ	e4				.0000008 Amp	4.4 mm	3
XCF02SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	2097152 words	3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel			2MX1	2M	-40 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			2097152 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	225	NOR TYPE	.001 Amp	6.5024 mm
25LC256T-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel	NO	3-STATE	32KX8	32K	-40 Cel	Matte Tin (Sn)		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		e3	40	260		.000001 Amp	4.4 mm	2.5
AT24CM01-XHD-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	5	2.7/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz	e4	40	260		.000001 Amp	4.4 mm	5
25AA256-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			32KX8	32K	-40 Cel	Matte Tin (Sn)		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V		e3	40	260		.000001 Amp	4.4 mm	2.5
24LC256-I/STG	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel	NO		32KX8	32K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3	40	260		.000001 Amp	4.4 mm
XCF16PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	16777216 words	1.8	1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	20	.5 mm	85 Cel			16MX1	16M	-40 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles		12 mm	Not Qualified			16777216 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE		18.45 mm
25LC256-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel	NO	3-STATE	32KX8	32K	-40 Cel	Matte Tin (Sn)		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		e3	40	260		.000001 Amp	4.4 mm	2.5
CAT25256YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	32768 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			32KX8	32K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V	100 YEAR DATA RETENTION	e4	40	260		.000001 Amp	4.4 mm
AT24CM01-XHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	5	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz	e4	40	260		.000001 Amp	4.4 mm	5
CAT24M01YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	1	EEPROMs	100	.65 mm	85 Cel			128KX8	128K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V	IT ALSO OPERATES AT 0.4MHZ	e4	40	260		.000002 Amp	4.4 mm
XCF04SVO20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			4MX1	4M	-40 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			4194304 bit	3 V		e0					6.5024 mm
XCF08PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	8388608 words	1.8	1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			8MX1	8M	-40 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	12 mm	Not Qualified			8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	18.45 mm
XCF04SVO20CES	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			4MX1	4M	-40 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			4194304 bit	3 V		e0					6.5024 mm
24LC64-I/STG	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3	40	260		.000001 Amp	4.4 mm
AT24C256C-XHL-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V		e4	40	260		.000006 Amp	4.4 mm	2.5
AT24C512C-XHD-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	2.5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	1.7 V		e4		260		.000006 Amp	4.4 mm	2.5
CAT24C512YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V	100 YEAR DATA RETENTION	e4	30	260		.000002 Amp	4.4 mm
M24256-BRDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V		e4	30	260		.000001 Amp	4.4 mm
AT24CM01-XHD-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	5	2.7/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz	e4	40	260		.000001 Amp	4.4 mm	5
M24C02-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	256 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e4	30	260		.000001 Amp	4.4 mm
AT24C64D-XHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz	e4	40	260		.000006 Amp	4.4 mm	3
24LC128-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		e3	40	260		.000005 Amp	4.4 mm	4.5
24LC64T-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	40	260		.000005 Amp	4.4 mm	4.5
XCF01SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	3.3	1.8/3.3,3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel			1MX1	1M	-40 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	225	NOR TYPE	.001 Amp	6.5024 mm
M24M01-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm		5 ms	I2C	1048576 bit	1.8 V		e4	30	260			4.4 mm
XCF02SVO20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			2MX1	2M	-40 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			2097152 bit	3 V		e0	30	225			6.5024 mm
M95M01-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	16 MHz	3 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V		e4	30	260		.000001 Amp	4.4 mm
AT25128B-XHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	20 MHz	3 mm	Not Qualified	5 ms	SPI	131072 bit	4.5 V	2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz	e4		260		.000005 Amp	4.4 mm	5
AT24C02C-XHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	2048 bit	1.7 V		e4		260		.000006 Amp	4.4 mm	2.5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.