RECTANGULAR EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28HC256E-12SU	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	MATTE TIN			DUAL			R-PDSO-G28	3	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	4.5 V		64	e3	30	260	.0003 Amp	17.9 mm	120 ns	5	YES
AT24C02D-PUM	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	256 words	3		1.8/3.3	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		3.6 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	1.7V TO 3.6V @ 0.4MHz		e3			.0000008 Amp	9.271 mm		3
24AA128-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			e3	40	260	.000005 Amp	4.4 mm		2.5
24AA256UID-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		1.8/5	8	IN-LINE	DIP8,.3		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.1MHZ		e3			.000001 Amp	9.271 mm		4.5
25AA02UIDT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37			200	.95 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	10 MHz	1.55 mm		5 ms	SPI	2048 bit	4.5 V	2.5V TO 4.5V @ 5MHz AND 1.8V TO 2.5V @ 3MHz		e3	40	260		2.9 mm		5
25AA128T-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			16KX8	16K	-40 Cel		Matte Tin (Sn) - annealed			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V			e3	40	260	.000001 Amp	4.4 mm		2.5
AT24CS01-SSHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	2048 words	5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	NO	3-STATE	2048X8	2048	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	16384 bit	1.7 V			e4	40	260	.000006 Amp	4.925 mm		5
AT24MAC602-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3			.000006 Amp	2.9 mm		2.5
AT28LV010-20TU-319	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3			8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20			10	.5 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms		1048576 bit	3.135 V			e3			.00005 Amp	18.4 mm	200 ns	3
CAT24C128YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	1	EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	5MICROAMP STANDBY CURRENT AVAILABLE @ 125 TEMP, AND OPERATES WITH 1.8VMIN SUPPLY @ 0.1MHZ		e4	30	260	.000002 Amp	4.4 mm		3.3
24AA32AT-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel			4KX8	4K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3		260	.000001 Amp	3 mm
24FC256T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3	30	260	.000005 Amp	4.9 mm		2.5
25LC640A-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel			8KX8	8K	-40 Cel					DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	65536 bit	2.5 V						.000005 Amp	4.9 mm		5
AT24MAC602-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	40	260	.000006 Amp	4.925 mm		2.5
AT28HC64BF-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs	10	1.27 mm	85 Cel			8KX8	8K	-40 Cel	NO	MATTE TIN			QUAD	1		R-PQCC-J32	1	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	2 ms		65536 bit	4.5 V		64	e3	30	245	.0001 Amp	13.97 mm	120 ns	5	YES
CAT34C02HU4IGT4A	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	16 words	5		1.8/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel	NO		16X16	16	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	YES	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	256 bit	1.7 V	100 YEAR DATA RETENTION	16	e4	30	260	.000001 Amp	3 mm
M24128-BRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	2.5			8	SMALL OUTLINE					1.27 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			e4		260		4.9 mm
11AA010T-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236		EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G3	1	5.5 V	1.12 mm	1000000 Write/Erase Cycles	1 MHz	1.3 mm	Not Qualified	10 ms	1-WIRE	1024 bit	1.8 V			e3	40	260	.000005 Amp	2.9 mm
24AA02UID-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	2048 bit	2.5 V	1.7V TO 2.5V @ 0.1MHz		e3	30	260	.000001 Amp	4.9 mm		5
AT28C010-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words	5			8	CHIP CARRIER					1.27 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN			QUAD			R-PQCC-J32		5.5 V	3.556 mm			11.43 mm		10 ms		1048576 bit	4.5 V			e3				13.97 mm	120 ns	5
CAT24C16HU4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3		1.8/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			16KX1	16K	-40 Cel		NICKEL PALLADIUM GOLD	1010MMMR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e4	30	260	.000001 Amp	3 mm
LE24L042CS-B-TFM-H	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		512 words	2.5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				20	.4 mm	85 Cel			512X8	512	-40 Cel		TIN SILVER COPPER			BOTTOM			R-PBGA-B4	1	3.6 V	.5 mm		.4 MHz	.79 mm		10 ms	I2C	4096 bit	1.7 V	20 YEAR DATA RETENTION		e1	30	260		1.06 mm
M24128-BFMH6TG	STMicroelectronics	EEPROM	INDUSTRIAL	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	SYNCHRONOUS	2.5 mA	16384 words			1.8/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16		EEPROMs	200	.4 mm	85 Cel			16KX8	16K	-40 Cel			1010DDDR		BOTTOM		HARDWARE	R-XBCC-B5	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	1 MHz	1.4 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V						.000001 Amp	1.7 mm
M24512-DFDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm		5 ms	I2C	524288 bit	1.7 V			e4	30	260		4.4 mm		5
M95080-WMN6TP/S	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel			1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		10 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V			e4				4.9 mm
24AA16T-E/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	125 Cel			2KX8	2K	-40 Cel			1010MMMR		DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm		5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz					.000005 Amp	2.9 mm		2.5
24LC256T-E/SNRVE	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel			1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	262144 bit	2.5 V						.000005 Amp	4.9 mm		4.5
25AA02E64T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37			200	.95 mm	85 Cel		3-STATE	256X8	256	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	10 MHz	1.55 mm		5 ms	SPI	2048 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @5MHZ AND 1.8V TO 2.5V @3MHZ		e3	40	260	.000001 Amp	2.9 mm		5
25LC512-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5		2.5/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	20 MHz	5.25 mm	Not Qualified	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz		e3	40	260	.00001 Amp	5.26 mm		5
AT28LV010-20TU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15000 mA	131072 words	3.3	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20			10	.5 mm	85 Cel			128KX8	128K	-40 Cel	NO	MATTE TIN			DUAL	1		R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms		1048576 bit	3.135 V		128	e3			.00005 Amp	18.4 mm	200 ns	3.3	YES
24FC64T-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ		e3	40	260	.000001 Amp	3 mm		4.5
24LC64-I/PREL	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5			8	IN-LINE				200	2.54 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN			DUAL			R-PDIP-T8		5.5 V	5.334 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3				9.271 mm
93LC56BT-I/SN15KVAO	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	3			16	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel			128X16	128	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm		6 ms	MICROWIRE	2048 bit	2.5 V			e3			.000001 Amp	4.9 mm		3
AT28LV256-25PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	Tin/Lead (Sn/Pb)			DUAL			R-PDIP-T28		3.465 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	3.135 V	AUTOMATIC WRITE	64	e0			.00005 Amp	36.95 mm	250 ns	3	YES
CAT25256XI-T2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	32768 words	5		2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel		Matte Tin (Sn) - annealed			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	2.03 mm	1000000 Write/Erase Cycles	5 MHz	5.23 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V	100 YEAR DATA RETENTION		e3	40	260	.000001 Amp	5.255 mm
CAT25320VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			4KX8	4K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	32768 bit	1.8 V	100 YEAR DATA RETENTION		e4	40	260	.000001 Amp	4.9 mm
DS28E15P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		512 words	3.3			1	SMALL OUTLINE					1.27 mm	85 Cel			512X1	512	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	512 bit	2.97 V			e3	30	260		4.29 mm
M24256-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	32768 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	4 ms	I2C	262144 bit	1.8 V			e4	30	260	.00001 Amp	4.9 mm
24LC02BT-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			256X8	256	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3	40	260	.000001 Amp	4.9 mm
24LC1025-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	3		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		Matte Tin (Sn) - annealed	1010MDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e3	40	260	.000005 Amp	5.26 mm		3
25AA512T-I/SN16KVAO	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel			64KX8	64K	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 0.1MHz					.000001 Amp	4.9 mm		5
24AA32A-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			4KX8	4K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260	.000001 Amp	4.4 mm
24AA64-I/STG	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			e3	40	260	.000001 Amp	4.4 mm
24FC64-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ		e3	30	260	.000001 Amp	4.9 mm		4.5
24LC00T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	16X8	16	-40 Cel		MATTE TIN	1010XXXR		DUAL	1		R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.5 mm	Not Qualified	4 ms	I2C	128 bit	4.5 V			e3		260	.000001 Amp	2.9 mm		5
25LC640AT-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V			e3	30	260	.000005 Amp	4.9 mm		5
93LC56BT-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	85 Cel			128X16	128	-40 Cel		Matte Tin (Sn)			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3	40	260	.000001 Amp	4.9 mm
M24C08-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	1024 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD	1010DMMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e4	30	260	.000001 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.