RECTANGULAR EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT64LC40YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE, VERY THIN PROFILE				1.2 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	6 V	.65 mm			3 mm	Not Qualified		SPI	262144 bit	2.5 V			e4	30	260			4.4 mm
CAV24C64YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words		5			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		100	.65 mm	125 Cel	NO		64KX1	64K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	65536 bit	2.5 V			e4	30	260		.000005 Amp	4.4 mm	.0035 ns	5
DS2432P	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words		5		3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD			DUAL			R-PDSO-C6		5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V			e0	20	240			3.94 mm
DS2432P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words		5		3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		MATTE TIN			DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V			e3	30	260			3.94 mm
DS2432P-100-011	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		C BEND	SERIAL			256 words				3/5	4	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			256X4	256	-40 Cel					DUAL			R-PDSO-C6				50000 Write/Erase Cycles			Not Qualified			1024 bit
DS2432P-100-011+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		C BEND	SERIAL			256 words				3/5	4	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			256X4	256	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1			50000 Write/Erase Cycles			Not Qualified			1024 bit				e3	30	260
DS28E05P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		64 words		3.3			1	SMALL OUTLINE				1.27 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	64 bit	2.75 V			e3	30	260			4.29 mm
FM24C04ULM8	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words		3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	70 Cel			512X8	512	0 Cel		Tin/Lead (Sn/Pb)	1010DDMR		DUAL			R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	15 ms	I2C	4096 bit	2.7 V			e0				.00001 Amp	4.9 mm
FM24C04ULMT8	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words		3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	70 Cel			512X8	512	0 Cel		Tin/Lead (Sn/Pb)	1010DDMR		DUAL			R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	15 ms	I2C	4096 bit	2.7 V			e0				.00001 Amp	4.4 mm
M24C16-FMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		1.8		1.8/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-XDSO-N8	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e4	30	260		.000001 Amp	3 mm		1.8
M24C16-FMH6TG	STMicroelectronics	EEPROM	INDUSTRIAL	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		1.8			8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16		200	.4 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel			1010DDDR		BOTTOM			R-XBCC-N5		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	1.4 mm		5 ms	I2C	16384 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	1.7 mm		1.8
M24C16-RMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		2.5		2/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-XDSO-N8	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e4		260		.000001 Amp	3 mm		2.5
M24C16-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e0				.000001 Amp	4.9 mm
M24C32-RMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words		2.5			8	SMALL OUTLINE				1.27 mm	85 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V			e4					4.9 mm
M24C64-DRDW8TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	8192 words		2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	105 Cel			8KX8	8K	-40 Cel					DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm		4 ms	I2C	65536 bit	1.8 V								4.4 mm
M24C64-FCS6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	8192 words				1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA5,3X3,14/8	EEPROMs	40	.2 mm	85 Cel			8KX8	8K	-40 Cel			1010DDDR		BOTTOM		HARDWARE	R-PBGA-B5		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	.959 mm	Not Qualified		I2C	65536 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	1.073 mm
M24C64-WMN6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words		5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel			8KX8	8K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e4	NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	4.9 mm
M24M01-RMW6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	262144 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	40	1.27 mm	85 Cel			256KX8	256K	-40 Cel		Matte Tin (Sn) - annealed	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	.4 MHz		Not Qualified	5 ms	I2C	2097152 bit	1.8 V			e3	30	260		.000001 Amp
M34E04-FMC9TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words		2.2			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	95 Cel			512X8	512	0 Cel					DUAL			R-PDSO-N8	1	3.6 V	.6 mm		1 MHz	2 mm		5 ms		4096 bit	1.7 V								3 mm		3
M93S46-WMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel			64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e4				.00001 Amp	4.9 mm
M95128-DWDW4TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		16384 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	145 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		10 MHz	3 mm		4 ms	SPI	131072 bit	2.5 V			e4		260			4.4 mm
M95320-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e4		260		.000002 Amp	4.4 mm		1.8
M95320-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e4				.000002 Amp	4.9 mm		1.8
M95640-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel			8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e4				.000001 Amp	4.4 mm		1.8
M95M04-DWDW3TP/V	STMicroelectronics	EEPROM		8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	524288 words		3.6			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		10	.65 mm	125 Cel			512KX8	512K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm		4 ms	SPI	4194304 bit	2.9 V				30	260		.00003 Amp	4.4 mm
PCF8582C-2P	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDIP-T8		6 V	4.2 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	DATA RETENTION > 10 YEARS; WIRE I2C INTERFACE		e4				.0000035 Amp	9.5 mm
PCF8582C-2P/03,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e4				.0000035 Amp	9.5 mm
PCF8582C-2T/03,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel			256X8	256	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL			R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e4	30	260		.0000035 Amp	4.9 mm
PCF8582C2D-T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel			256X8	256	-40 Cel			1010DDDR		DUAL			R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V				40	260			4.9 mm
S-24C16DI-I8T1U5	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		FLAT	SERIAL	SYNCHRONOUS		2048 words		5			8	SMALL OUTLINE, VERY THIN PROFILE				.5 mm	85 Cel			2KX8	2K	-40 Cel		TIN			DUAL			R-PDSO-F8		5.5 V	.5 mm		1 MHz	1.97 mm		5 ms	I2C	16384 bit	2.5 V	IT ALSO OPERATES AT 0.4 MHZ AT 1.7 TO 5.5 V SUPPLY VOLTAGE		e3					2.23 mm
S-25C080A0I-I8T1U	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		FLAT	SERIAL	SYNCHRONOUS		1024 words		5			8	SMALL OUTLINE, VERY THIN PROFILE				.5 mm	85 Cel			1KX8	1K	-40 Cel		TIN			DUAL			R-PDSO-F8		5.5 V	.5 mm		5 MHz	1.97 mm		4 ms	SPI	8192 bit	2.5 V	IT ALSO HAVE FREQUENCY OF 2 MHZ OPERATES AT 1.6 TO 2.5 V SUPPLY VOLTAGE		e3					2.23 mm
W27C512-45Z	Winbond Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5			8	IN-LINE				2.54 mm	70 Cel			64KX8	64K	0 Cel					DUAL			R-PDIP-T28		5.25 V	5.33 mm			15.24 mm	Not Qualified			524288 bit	4.75 V				NOT SPECIFIED	NOT SPECIFIED			37.08 mm	45 ns	12
X24C16PM-3	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		3.3			8	IN-LINE				2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3 V								9.585 mm
X24C16PMB-2.7	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		3.3			8	IN-LINE				2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V								9.585 mm
X24C16PMB-3.5	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		5			8	IN-LINE				2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3.5 V								9.585 mm
X25020S	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel		3-STATE	256X8	256	0 Cel		Tin/Lead (Sn/Pb)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS		e0				.00015 Amp	4.9 mm
X25020S-2.7	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel		3-STATE	256X8	256	0 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	2.7 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS		e0				.00015 Amp	4.9 mm
X25020SIT2	Xicor	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE			100	1.27 mm	85 Cel		3-STATE	256X8	256	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS							4.9 mm
X25020ST1	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE			100	1.27 mm	70 Cel		3-STATE	256X8	256	0 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS							4.9 mm
X28HC256JI-12T1	Intersil	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN LEAD			QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0				.0005 Amp	13.97 mm	120 ns	5	YES
X28HC256SI-12T1	Intersil	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDSO-G28	1	5.5 V	2.65 mm	1000000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0				.0005 Amp	17.9 mm	120 ns	5	YES
XC1701LSO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G20	3	3.6 V	2.6416 mm		15 MHz	7.5184 mm	Not Qualified			1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	12.827 mm
XC1736EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel		3-STATE	36288X1	36288	0 Cel		Matte Tin (Sn)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	250		.00005 Amp	9.3599 mm
XC18V01SO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	20	1.27 mm	85 Cel			128KX8	128K	-40 Cel		TIN LEAD			DUAL			R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified			1048576 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	12.827 mm	15 ns
XCF08PFS48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	8388608 words		1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel			8MX1	8M	-40 Cel		TIN LEAD			BOTTOM			R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	8 mm	Not Qualified			8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e0	30	240	NOR TYPE	.001 Amp	9 mm
XCF32PVO48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	33554432 words		1.8		1.5/3.3,1.8	1	SMALL OUTLINE	TSSOP48,.8,20	Flash Memories	20	.5 mm	85 Cel			32MX1	32M	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles		12 mm	Not Qualified			33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e0	30	225	NOR TYPE		18.45 mm
11AA010-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5	NO	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	1-WIRE	1024 bit	1.8 V			e3	30	260		.000005 Amp	4.9 mm
11AA010-I/WF16K	Microchip Technology	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words		5	NO		8	UNCASED CHIP	DIE OR CHIP		200		85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel				NO	UPPER	1	SOFTWARE	R-XUUC-N		5.5 V		1000000 Write/Erase Cycles	.1 MHz			10 ms	1-WIRE	1024 bit	2.5 V							.000005 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.