ROUND EEPROM 54

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Endurance	Maximum Clock Frequency (fCLK)	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time	Programming Voltage (V)
DS24B33+T&R	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words			3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel	Matte Tin (Sn) - annealed		BOTTOM		O-PBCY-T3		5.25 V	50000 Write/Erase Cycles		Not Qualified		1-WIRE	4096 bit	2.8 V		e3	20	250
DS24B33+	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words			3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel	Matte Tin (Sn) - annealed		BOTTOM		O-PBCY-T3		5.25 V	50000 Write/Erase Cycles		Not Qualified		1-WIRE	4096 bit	2.8 V		e3	20	250
DS28EC20+T	Analog Devices	EEPROM	INDUSTRIAL	3		ROUND	UNSPECIFIED	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.9 mA	20480 words			5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel	Matte Tin (Sn) - annealed		BOTTOM		O-XBCY-W3		5.25 V	200000 Write/Erase Cycles		Not Qualified		1-WIRE	20480 bit	4 V		e3		250
DS28EC20+	Analog Devices	EEPROM	INDUSTRIAL	3		ROUND	UNSPECIFIED	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.9 mA	20480 words			5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel	Matte Tin (Sn) - annealed		BOTTOM		O-XBCY-W3		5.25 V	200000 Write/Erase Cycles		Not Qualified		1-WIRE	20480 bit	4 V		e3		250
DS28E07+	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words				1	CYLINDRICAL			10	2.6 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed		BOTTOM	HARDWARE	O-XBCY-T3		5.25 V	10000 Write/Erase Cycles				1-WIRE	1024 bit	3 V		e3		250			3
DS2430A/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		256 words		5	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel	TIN LEAD		BOTTOM		O-PBCY-T3		6 V	100000 Write/Erase Cycles	.0163 MHz	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS2430A+T&R	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		256 words		5	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel	MATTE TIN		BOTTOM		O-PBCY-T3		6 V	100000 Write/Erase Cycles	.0163 MHz	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3		250
DS2430A	Maxim Integrated	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		256 words		5	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel	TIN LEAD		BOTTOM		O-PBCY-T3		6 V	100000 Write/Erase Cycles	.0163 MHz	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS2430A+	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		256 words		5	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel	MATTE TIN		BOTTOM		O-PBCY-T3		6 V	100000 Write/Erase Cycles	.0163 MHz	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3		250
DS28E07+T	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words				1	CYLINDRICAL			10	2.6 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed		BOTTOM	HARDWARE	O-XBCY-T3		5.25 V	10000 Write/Erase Cycles				1-WIRE	1024 bit	3 V		e3		250			3
DS1990A-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3.3	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			64X1	64	-40 Cel	TIN LEAD		END		O-MEDB-N2	1	6 V			Not Qualified		1-WIRE	64 bit	2.8 V		e0				15000 ns
DS1990A-F5#	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words				1	DISK BUTTON					85 Cel			64X1	64	-40 Cel	MATTE TIN		END		O-MEDB-N2		6 V			Not Qualified		1-WIRE	64 bit	2.8 V		e3
DS1990A-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3.3	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			64X1	64	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		6 V			Not Qualified		1-WIRE	64 bit	2.8 V		e3				15000 ns
DS1961S-F5#	Maxim Integrated	EEPROM	COMMERCIAL EXTENDED	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words		3.3		1	DISK BUTTON					85 Cel			1KX1	1K	-20 Cel	MATTE TIN		END		O-MEDB-N2		5.25 V			Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS1961S-F5	Maxim Integrated	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words			3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs			85 Cel			1KX1	1K	-20 Cel	TIN LEAD		END		O-MEDB-N2	1	5.25 V			Not Qualified		1-WIRE	1024 bit	2.8 V		e0	20	240
DS1961S-F5+	Analog Devices	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	DISK BUTTON					85 Cel			1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		5.25 V			Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS2433+	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words		5	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel	MATTE TIN		BOTTOM		O-PBCY-T3	1	6 V	50000 Write/Erase Cycles	.0163 MHz	Not Qualified		1-WIRE	4096 bit	2.8 V		e3
DS2433	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words		5	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel	TIN LEAD		BOTTOM		O-PBCY-T3	1	6 V	50000 Write/Erase Cycles	.0163 MHz	Not Qualified		1-WIRE	4096 bit	2.8 V		e0		245
DS1977-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		262144 words		3.3		1	DISK BUTTON					85 Cel			256KX1	256K	-40 Cel	TIN LEAD		END		O-MEDB-N2	1	5.25 V			Not Qualified		1-WIRE	262144 bit	2.8 V		e0
DS1977-F5+	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	7 mA	262144 words		3.3	3/5	1	DISK BUTTON	BUTTON,.68IN	EEPROMs	10		85 Cel			256KX1	256K	-40 Cel	MATTE TIN		END		O-MEDB-N2		5.25 V	100000 Write/Erase Cycles		Not Qualified		1-WIRE	262144 bit	2.8 V		e3
DS1977-F5#	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		32768 words		5		1	DISK BUTTON					85 Cel			32KX1	32K	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		5.25 V			Not Qualified		1-WIRE	32768 bit	2.8 V		e3
DS1971-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		32 words		5	3/5	8	DISK BUTTON	BUTTON,.68IN	EEPROMs			85 Cel			32X8	32	-40 Cel	TIN LEAD		END		O-MEDB-N2	1	6 V		.0163 MHz	Not Qualified		1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS1971-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		32 words		5		8	DISK BUTTON					85 Cel			32X8	32	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		6 V		.0163 MHz	Not Qualified		1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3
DS2430AT	Maxim Integrated	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		32 words		5	3/5	8	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			32X8	32	-40 Cel	TIN LEAD		BOTTOM		O-PBCY-T3		6 V	100000 Write/Erase Cycles	.0163 MHz	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS1973-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON					85 Cel			512X8	512	-40 Cel	TIN LEAD		END		O-MEDB-N2	1	6 V		.0163 MHz	Not Qualified		1-WIRE	4096 bit	2.8 V		e0
DS1973-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON					85 Cel			512X8	512	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		6 V		.0163 MHz	Not Qualified		1-WIRE	4096 bit	2.8 V		e3
DS1990R-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3.3		1	DISK BUTTON					85 Cel			64X1	64	-40 Cel	TIN LEAD		END		O-MEDB-N2		6 V			Not Qualified		1-WIRE	64 bit	2.8 V		e0
DS1990R-F5#	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words		5		1	DISK BUTTON					85 Cel			64X1	64	-40 Cel			END		O-MEDB-N2		6 V			Not Qualified		1-WIRE	64 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED
DS2433-Z01	Analog Devices	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words		5		8	CYLINDRICAL					85 Cel			512X8	512	-40 Cel	TIN LEAD		BOTTOM		O-PBCY-T3		6 V			Not Qualified		1-WIRE	4096 bit	2.8 V		e0
DS1973-F3	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON					85 Cel			512X8	512	-40 Cel	TIN LEAD		END		O-MEDB-N2	1	6 V		.0163 MHz	Not Qualified		1-WIRE	4096 bit	2.8 V		e0
DS1973-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON					85 Cel			512X8	512	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		6 V		.0163 MHz	Not Qualified		1-WIRE	4096 bit	2.8 V		e3
DS28E25+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words		3.3		1	CYLINDRICAL					85 Cel			4KX1	4K	-40 Cel	Matte Tin (Sn) - annealed		BOTTOM		O-XBCY-T2		3.63 V					1-WIRE	4096 bit	2.97 V		e3		250
DS1985-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		16384 words	COMMON	5	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			16KX1	16K	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		6 V			Not Qualified		1-WIRE	16384 bit	2.8 V	MICROLAN COMPATIBLE	e3				15000 ns
DS1961S-F3+	Analog Devices	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	DISK BUTTON					85 Cel			1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		5.25 V			Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS1972-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words		5	3/5	1	DISK BUTTON	BUTTON,.68IN	EEPROMs	10		85 Cel			1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		5.25 V	50000 Write/Erase Cycles		Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS1990A-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3.3	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			64X1	64	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		6 V			Not Qualified		1-WIRE	64 bit	2.8 V		e3				15000 ns
DS1972-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words		5	3/5	1	DISK BUTTON	BUTTON,.68IN	EEPROMs	10		85 Cel			1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		5.25 V	50000 Write/Erase Cycles		Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS1985-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		16384 words	COMMON	5	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			16KX1	16K	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		6 V			Not Qualified		1-WIRE	16384 bit	2.8 V	MICROLAN COMPATIBLE	e3				15000 ns
DS1971-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		32 words		5		8	DISK BUTTON					85 Cel			32X8	32	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		6 V		.0163 MHz	Not Qualified		1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3
DS1990R-F3#	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words		5		1	DISK BUTTON					85 Cel			64X1	64	-40 Cel			END		O-MEDB-N2		6 V			Not Qualified		1-WIRE	64 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED
M24C16-FTW20I/90	STMicroelectronics	EEPROM	INDUSTRIAL			ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		1.8		8				200		85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel	NOT APPLICABLE	1010DDDR	UNSPECIFIED		O-XUUC-N		5.5 V	4000000 Write/Erase Cycles	.4 MHz		5 ms	I2C	16384 bit	1.7 V			NOT APPLICABLE	NOT APPLICABLE	.000001 Amp		1.8
M24C16-FTW22I/90	STMicroelectronics	EEPROM	INDUSTRIAL			ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		1.8		8				200		85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR	UNSPECIFIED		O-XUUC-N		5.5 V	4000000 Write/Erase Cycles	.4 MHz		5 ms	I2C	16384 bit	1.7 V					.000001 Amp		1.8
DS1961S-F3#	Maxim Integrated	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	DISK BUTTON					85 Cel			1KX1	1K	-20 Cel	MATTE TIN		END		O-MEDB-N2		5.25 V			Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS1972-F5#	Maxim Integrated	EEPROM	INDUSTRIAL	5		ROUND	METAL	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS		256 words			3/5	4	CYLINDRICAL	BUTTON,.68IN	EEPROMs	10		85 Cel			256X4	256	-40 Cel	MATTE TIN		BOTTOM		O-MBCY-W5		5.25 V	50000 Write/Erase Cycles		Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS2433-Z01/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words		5		8	CYLINDRICAL					85 Cel			512X8	512	-40 Cel	TIN LEAD		BOTTOM		O-PBCY-T3		6 V			Not Qualified		1-WIRE	4096 bit	2.8 V		e0
DS1972-F3#	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	METAL	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS		256 words			3/5	4	CYLINDRICAL	BUTTON,.68IN	EEPROMs	10		85 Cel			256X4	256	-40 Cel	MATTE TIN		BOTTOM		O-MBCY-W3		5.25 V	50000 Write/Erase Cycles		Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS2433/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words		5		1	CYLINDRICAL					85 Cel			4KX1	4K	-40 Cel	TIN LEAD		BOTTOM		O-PBCY-T3		6 V		.0163 MHz	Not Qualified		1-WIRE	4096 bit	2.8 V		e0
DS1961S-F3	Maxim Integrated	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words			3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs			85 Cel			1KX1	1K	-20 Cel	TIN LEAD		END		O-MEDB-N2	1	5.25 V			Not Qualified		1-WIRE	1024 bit	2.8 V		e0

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.