ROUND EEPROM 54

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

DS1985-F5

Maxim Integrated

EEPROM

INDUSTRIAL

2

ROUND

METAL

YES

1

MOS

NO LEAD

SERIAL

SYNCHRONOUS

2048 words

COMMON

5

3/5

8

DISK BUTTON

BUTTON,.68IN

Other Memory ICs

85 Cel

2KX8

2K

-40 Cel

TIN LEAD

END

O-MEDB-N2

1

6 V

Not Qualified

16384 bit

2.8 V

MICROLAN COMPATIBLE

e0

20

240

15000 ns

3

DS2433T

Maxim Integrated

EEPROM

INDUSTRIAL

3

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

512 words

3/5

8

CYLINDRICAL

SIP3,.1,50

EEPROMs

1.27 mm

85 Cel

512X8

512

-40 Cel

TIN LEAD

BOTTOM

O-PBCY-T3

6 V

100000 Write/Erase Cycles

.0163 MHz

Not Qualified

1-WIRE

4096 bit

2.8 V

e0

DS1971-F3

Maxim Integrated

EEPROM

INDUSTRIAL

2

ROUND

METAL

YES

1

MOS

NO LEAD

SERIAL

ASYNCHRONOUS

32 words

5

3/5

8

DISK BUTTON

BUTTON,.68IN

EEPROMs

85 Cel

32X8

32

-40 Cel

TIN LEAD

END

O-MEDB-N2

1

6 V

.0163 MHz

Not Qualified

1-WIRE

256 bit

2.8 V

MICROLAN COMPATIBLE

e0

DS1985-F3

Maxim Integrated

EEPROM

INDUSTRIAL

2

ROUND

METAL

YES

1

MOS

NO LEAD

SERIAL

SYNCHRONOUS

2048 words

COMMON

5

3/5

8

DISK BUTTON

BUTTON,.68IN

Other Memory ICs

85 Cel

2KX8

2K

-40 Cel

TIN LEAD

END

O-MEDB-N2

1

6 V

Not Qualified

16384 bit

2.8 V

MICROLAN COMPATIBLE

e0

15000 ns

3

DS1990R-F3

Maxim Integrated

EEPROM

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

64 words

3.3

1

DISK BUTTON

85 Cel

64X1

64

-40 Cel

TIN LEAD

END

O-MEDB-N2

6 V

Not Qualified

1-WIRE

64 bit

2.8 V

e0

DS1990A-F3

Maxim Integrated

EEPROM

INDUSTRIAL

2

ROUND

METAL

YES

1

MOS

NO LEAD

SERIAL

ASYNCHRONOUS

64 words

3.3

3/5

1

DISK BUTTON

BUTTON,.68IN

Other Memory ICs

85 Cel

64X1

64

-40 Cel

TIN LEAD

END

O-MEDB-N2

1

6 V

Not Qualified

1-WIRE

64 bit

2.8 V

e0

15000 ns

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.