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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
CAT24FC01RE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		3	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	125 Cel		128X8	128	-40 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V		e0			.00001 Amp	3 mm
CAT25040ZA-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		512X8	512	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			S-PDSO-G8	1	5.5 V	1.1 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	4096 bit	1.8 V		e4				3 mm
CAT24FC16RE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words		3	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	125 Cel		2KX8	2K	-40 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V		e0			.00001 Amp	3 mm
CAT24C64ZE-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		100	.65 mm	125 Cel		8KX8	8K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	1	HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V		e4			.000005 Amp	3 mm
CAT25040ZE-GT3D	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V	IT ALSO OPERATES AT 5MHZ AT 1.8MIN	e3			.000002 Amp	3 mm
CAT24C04VP2IT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		32 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		32X16	32	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			S-PDSO-G8		5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	512 bit	1.8 V		e4				3 mm
CAT25040ZI-T3D	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V		e3			.000002 Amp	3 mm
CAT25C11RA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	105 Cel		128X8	128	-40 Cel	TIN LEAD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V		e0			.00001 Amp	3 mm
CAT25010RA-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	105 Cel		128X8	128	-40 Cel	TIN LEAD		DUAL			S-PDSO-G8	1	6 V	1.1 mm		1 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V		e0				3 mm
CAT24WC05ZA-TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	105 Cel		512X8	512	-40 Cel	MATTE TIN	1010DDMR	DUAL		HARDWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V		e3			.0000009 Amp	3 mm
CAT25010Z	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel		128X8	128	0 Cel	MATTE TIN		DUAL			S-PDSO-G8	1	6 V	1.1 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V		e3				3 mm
CAT25040GZI-1.8REV-C	Onsemi	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words		5		8	SMALL OUTLINE					85 Cel		512X8	512	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			S-PDSO-G8	1	5.5 V			1 MHz		Not Qualified	5 ms	SPI	4096 bit	1.8 V		e4
CAT25C11ZI-TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	85 Cel		128X8	128	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V		e3			.000001 Amp	3 mm
CAT25040Z-REV-C	Onsemi	EEPROM	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words		5		8	SMALL OUTLINE					70 Cel		512X8	512	0 Cel	MATTE TIN		DUAL			S-PDSO-G8	1	5.5 V			5 MHz		Not Qualified	5 ms	SPI	4096 bit	2.5 V		e3
CAT24FC16RD4I	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words		3	2/5	8	SMALL OUTLINE	SOLCC8,.12,25	EEPROMs	100	.635 mm	85 Cel		2KX8	2K	-40 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	S-XDSO-N8		5.5 V		1000000 Write/Erase Cycles	.1 MHz		Not Qualified	5 ms	I2C	16384 bit	1.8 V		e0			.000001 Amp
CAT24WC05ZA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		3	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	105 Cel		512X8	512	-40 Cel	MATTE TIN	1010DDMR	DUAL		HARDWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	4096 bit	1.8 V		e3			.0000009 Amp	3 mm
CAT25C11GZ-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel		128X8	128	0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			S-PDSO-G8		6 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V		e4	40	260		3 mm
CAT24C21ZE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	125 Cel		128X8	128	-40 Cel		1010XXXR	DUAL			S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e4	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
CAT24WC164RE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words		3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	125 Cel		2KX8	2K	-40 Cel	TIN LEAD	1DDDMMMR	DUAL		HARDWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V		e0			.00001 Amp	3 mm
CAT24C21ZD4E-REVB	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words		3		8	SMALL OUTLINE					125 Cel		128X8	128	-40 Cel	MATTE TIN		DUAL			S-XDSO-N8	1	5.5 V			.4 MHz		Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3
CAT24C64ZI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words		5	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	85 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V	100 YEAR DATA RETENTION	e4			.000003 Amp	3 mm
CAT25040GZA-REV-C	Onsemi	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words		5		8	SMALL OUTLINE					105 Cel		512X8	512	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			S-PDSO-G8	1	5.5 V			5 MHz		Not Qualified	5 ms	SPI	4096 bit	2.5 V		e4
CAT25020Z-1.8REV-C	Onsemi	EEPROM	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5		8	SMALL OUTLINE					70 Cel		256X8	256	0 Cel	MATTE TIN		DUAL			S-PDSO-G8	1	5.5 V			1 MHz		Not Qualified	5 ms	SPI	2048 bit	1.8 V		e3
CAT24C21ZD4E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words		3	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	EEPROMs	100	.65 mm	125 Cel		128X8	128	-40 Cel	MATTE TIN	1010XXXR	DUAL			S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3			.000001 Amp	3 mm		2.7
CAT24C04ZE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words		3.3	2/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	125 Cel		4KX1	4K	-40 Cel	MATTE TIN	1010DDMR	DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V		e3			.000002 Amp	3 mm
CAT25020ZA-T3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		256X8	256	-40 Cel	MATTE TIN		DUAL			S-PDSO-G8	1	5.5 V	1.1 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V		e3				3 mm
CAT25020GZE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5		8	SMALL OUTLINE					125 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			S-PDSO-G8	1	5.5 V			1 MHz		Not Qualified	5 ms	SPI	2048 bit	1.8 V		e4
CAT25080HU2I-T3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	1024 words		5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.08,20	EEPROMs	100	.5 mm	85 Cel		1KX8	1K	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-N8		5.5 V	.55 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V	100 YEAR DATA RETENTION	e3			.000002 Amp	2 mm
CAT25C11RA	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	105 Cel		128X8	128	-40 Cel	TIN LEAD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V		e0			.00001 Amp	3 mm
CAT25C11RA-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	105 Cel		128X8	128	-40 Cel	TIN LEAD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V		e0			.00001 Amp	3 mm
CAT24C21R-TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD		DUAL			S-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e0				3 mm
CAT25C03RI-TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	85 Cel		256X8	256	-40 Cel	TIN LEAD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V		e0				3 mm
CAT24WC03ZA-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		3	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	105 Cel		256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V		e3			.0000009 Amp	3 mm
CAT25C11R	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	70 Cel		128X8	128	0 Cel	TIN LEAD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V		e0			.000001 Amp	3 mm
CAT24C01BZA	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	105 Cel		128X8	128	-40 Cel	MATTE TIN		DUAL			S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V		e3			.000001 Amp	3 mm
CAT25010ZE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		128X8	128	-40 Cel	MATTE TIN		DUAL			S-PDSO-G8	1	6 V	1.1 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V		e3				3 mm
CAT25040R-REV-C	Onsemi	EEPROM	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words		5		8	SMALL OUTLINE					70 Cel		512X8	512	0 Cel	TIN LEAD		DUAL			S-PDSO-G8	1	5.5 V			5 MHz		Not Qualified	5 ms	SPI	4096 bit	2.5 V		e0
CAT25020ZA-1.8TE13REV-C	Onsemi	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5		8	SMALL OUTLINE					105 Cel		256X8	256	-40 Cel	MATTE TIN		DUAL			S-PDSO-G8	1	5.5 V			1 MHz		Not Qualified	5 ms	SPI	2048 bit	1.8 V		e3
CAT24FC16ZD4E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words		3	2/5	8	SMALL OUTLINE	SOLCC8,.12,25	EEPROMs	100	.635 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	S-XDSO-N8		5.5 V		1000000 Write/Erase Cycles	.1 MHz		Not Qualified	5 ms	I2C	16384 bit	1.8 V		e3			.00001 Amp
CAT24C64ZE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		100	.65 mm	125 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V		e4	30	260	.000005 Amp	3 mm
M27C1024-90XC7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD			S-PQCC-J44										1048576 bit			e3			.0001 Amp		80 ns	2.7
M93S56-RDS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		128KX16	128K	-40 Cel			DUAL			S-PDSO-G8		5.5 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	2097152 bit	1.8 V						3 mm
M27C1024-15C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD			S-PQCC-J44										1048576 bit			e3			.0001 Amp		100 ns	2.7
M27C1024-15C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN		QUAD			S-PQCC-J44										1048576 bit			e3			.0001 Amp		100 ns	2.7
M27C1024-55C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD			S-PQCC-J44										1048576 bit			e3			.0001 Amp		55 ns	2.7
M93S46-RDS3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		64KX16	64K	-40 Cel	MATTE TIN		DUAL			S-PDSO-G8	1	5.5 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1048576 bit	1.8 V		e3				3 mm
M93S66-RDS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5	2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V		e3			.000002 Amp	3 mm
M34C02-WDS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e3			.0000005 Amp	3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.