SQUARE EEPROM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C1024-20C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		100 ns	2.7
M27C1024-15C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		100 ns	2.7
M34C02-LDS1P	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel		256X8	256	0 Cel	MATTE TIN		DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V	e3				3 mm
M34C02-FDS1G	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		2.5	1.8/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	70 Cel		256X8	256	0 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V	e3			.0000005 Amp	3 mm
M34C02-LDS1TG	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel		256X8	256	0 Cel	MATTE TIN		DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V	e3				3 mm
M27C1024-70C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		70 ns	2.7
M93S46-DS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	125 Cel		64X16	64	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V	e0			.000015 Amp	3 mm
M93S46-WDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		64X16	64	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V	e3			.00001 Amp	3 mm
M34C02-WDS1G	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel		256X8	256	0 Cel	MATTE TIN		DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	e3				3 mm
M34C02-LDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5	2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V	e3			.0000005 Amp	3 mm
M27C1024-10C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		100 ns	2.7
M27C1024-45C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		45 ns	2.7
M27C1024-80XC6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		80 ns	2.7
M27C1024-20XC3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		100 ns	2.7
M27C1024-45XC1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		45 ns	2.7
M27C1024-10C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		100 ns	2.7
M93S56-RDS6	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5	2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		128X16	128	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V	e0			.000001 Amp	3 mm
M34C02-LDS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5	2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V	e3			.0000005 Amp	3 mm
M93S66-DS3TG	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	125 Cel		256X16	256	-40 Cel	Matte Tin (Sn)		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V	e3	30	260	.000015 Amp	3 mm
M27C1024-55XC3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		55 ns	2.7
M34C02-WDS1TG	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel		256X8	256	0 Cel	MATTE TIN		DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	e3				3 mm
M34C02-FDS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		256X8	256	-40 Cel	MATTE TIN		DUAL		S-PDSO-G8	1	3.6 V	1.1 mm		.1 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V	e3				3 mm
M93S56-DS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V	e3			.000015 Amp	3 mm
M93S66-WDS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V	e3			.000005 Amp	3 mm
M93S46-DS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		64X16	64	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V	e3			.000015 Amp	3 mm
M93S66-DS6	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		256X16	256	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V	e0			.000015 Amp	3 mm
M93S66-RDS3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		256KX16	256K	-40 Cel	MATTE TIN		DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	4194304 bit	1.8 V	e3				3 mm
M34C02-LDS1G	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel		256X8	256	0 Cel	MATTE TIN		DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V	e3				3 mm
M27C1024-80C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		80 ns	2.7
M27C1024-55C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		55 ns	2.7
M93S66-WDS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		256X16	256	-40 Cel	TIN LEAD		DUAL		S-PDSO-G8		5.5 V	1.1 mm		2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V	e0				3 mm
M93S46-RDS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5	2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		64X16	64	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V	e3			.000002 Amp	3 mm
M93S66-WDS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V	e3			.000005 Amp	3 mm
M93S66-RDS3P	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		256KX16	256K	-40 Cel	MATTE TIN		DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	4194304 bit	1.8 V	e3				3 mm
M93S66-WDS6	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		256X16	256	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V	e0			.000005 Amp	3 mm
M93S66-WDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V	e3			.000005 Amp	3 mm
M93S46-WDS3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words		5	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	125 Cel		64X16	64	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V	e3			.00001 Amp	3 mm
M93S56-WDS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V	e3			.000005 Amp	3 mm
M93S56-RDS3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		128KX16	128K	-40 Cel	MATTE TIN		DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	2097152 bit	1.8 V	e3				3 mm
M27C1024-12XC1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		100 ns	2.7
M34C02-WDS6	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	e0			.0000005 Amp	3 mm
M27C1024-55XC7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		55 ns	2.7
M93S46-WDS3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words		5	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	125 Cel		64X16	64	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V	e3			.00001 Amp	3 mm
M93S66-WDS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V	e3			.000005 Amp	3 mm
M93S46-RDS3TG	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		64KX16	64K	-40 Cel	MATTE TIN		DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1048576 bit	1.8 V	e3				3 mm
M34C02-RDS1T	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	70 Cel		256X8	256	0 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V	e0			.0000005 Amp	3 mm
M93S66-RDS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		256KX16	256K	-40 Cel			DUAL		S-PDSO-G8		5.5 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	4194304 bit	1.8 V					3 mm
M27C1024-20C7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J44										1048576 bit		e3			.0001 Amp		100 ns	2.7

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.