AUTOMOTIVE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
DS2431P-A1+T	Analog Devices	EEPROM	AUTOMOTIVE	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	5		5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	10	1.27 mm	125 Cel			1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	4.5 V		e3	30	260			3.94 mm
DS2431P-A1+	Analog Devices	EEPROM	AUTOMOTIVE	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	5		5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	10	1.27 mm	125 Cel			1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	4.5 V		e3	30	260			3.94 mm
24LC16BT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel			2KX8	2K	-40 Cel	MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		e3		260		.000005 Amp	2.95 mm	5
24LC256-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm	4.5
25LC1024-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		3/5	8	SMALL OUTLINE	SOP8,.3		Flash Memories	200	1.27 mm	125 Cel			128KX8	128K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	10 MHz	5.25 mm	Not Qualified	6 ms	SPI	1048576 bit	2.5 V	200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD	e3	40	260	NOR TYPE	.00002 Amp	5.26 mm	5
25LC512-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz	e3	30	260		.00001 Amp	4.9 mm	5
25LC256T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel			32KX8	32K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm	4.5
25LC256-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel			32KX8	32K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm	4.5
24LC64T-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3	40	260		.000005 Amp	2.9 mm	4.5
24LC16BT-E/OTG	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel			2KX8	2K	-40 Cel	MATTE TIN	1010MMMR		DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES	e3		260		.000005 Amp	2.95 mm
24LC256T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm	4.5
24LC16BT-E/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	125 Cel			2KX8	2K	-40 Cel		1010MMMR		DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm		5 ms	I2C	16384 bit	2.5 V						.000005 Amp	2.95 mm	5
M24M02-DWMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	262144 words				8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	125 Cel			256KX8	256K	-40 Cel	NICKEL PALLADIUM GOLD	1010DMMR		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	2097152 bit	2.5 V		e4	30	260		.00004 Amp	4.9 mm
24AA02E48T-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		1.8/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	1.7V TO 2.5V @ 0.1MHz	e3		260		.000005 Amp	2.9 mm	5
M24C16-DRMF3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		2048 words	2.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.8 mm		1 MHz	2 mm		4 ms	I2C	16384 bit	1.8 V		e4		260			3 mm
25LC256-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel			32KX8	32K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	262144 bit	2.5 V		e3				.000005 Amp	4.9 mm	4.5
24AA025E48T-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		1.8/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	10100DDR		DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @0.1MHZ	e3				.000005 Amp	2.9 mm	5
24AA025E48T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @0.1MHZ	e3	30	260		.000005 Amp	4.9 mm	5
24LC64T-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	40	260		.000005 Amp	4.4 mm	4.5
25LC1024-E/SM16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5			8	SMALL OUTLINE	SOP8,.3			200	1.27 mm	125 Cel			128KX8	128K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	20 MHz	5.25 mm		6 ms	SPI	1048576 bit	2.5 V	ALSO OPERATES AT 10MHZ	e3	40	260		.00002 Amp	5.26 mm	5
M95M02-DWMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		262144 words				8	SMALL OUTLINE					1.27 mm	125 Cel			256KX8	256K	-40 Cel				DUAL			R-PDSO-G8		5.5 V	1.75 mm		5 MHz	3.9 mm		5 ms	SPI	2097152 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
M95M01-DWMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel			128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	4 ms	SPI	1048576 bit	2.5 V		e4	30	260		.000002 Amp	4.9 mm
25LC1024-E/MF	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	200	1.27 mm	125 Cel			128KX8	128K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	10 MHz	5 mm	Not Qualified	6 ms	SPI	1048576 bit	2.5 V	200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD	e3	40	260	NOR TYPE	.00002 Amp	6 mm	5
M95256-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	4 ms	SPI	262144 bit	1.8 V		e4	30	260		.000001 Amp	4.9 mm
25LC256T-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel			32KX8	32K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	262144 bit	2.5 V		e3				.000005 Amp	4.9 mm	4.5
24LC256-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3				.000005 Amp	9.271 mm	4.5
25LC1024T-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		3/5	8	SMALL OUTLINE	SOP8,.3		Flash Memories	200	1.27 mm	125 Cel			128KX8	128K	-40 Cel	Matte Tin (Sn) - annealed			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	10 MHz	5.25 mm	Not Qualified	6 ms	SPI	1048576 bit	2.5 V	200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD	e3	40	260	NOR TYPE	.00002 Amp	5.26 mm	5
25LC256T-E/SN16KV18	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel	NO	3-STATE	32KX8	32K	-40 Cel				DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	262144 bit	4.5 V						.000001 Amp	4.9 mm	2.5
25LC640A-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel			8KX8	8K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm	5
25LC256-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel			32KX8	32K	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		e3	40	260		.000005 Amp	4.4 mm	4.5
24LC64-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	30	260		.000005 Amp	4.9 mm	4.5
24LC16BT-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel			2KX8	2K	-40 Cel	MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm	5
24AA64T-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37			200	.95 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm		5 ms	I2C	65536 bit	2.5 V		e3	40	260		.000005 Amp	2.9 mm	4.5
25LC256-H/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	150 Cel		3-STATE	32KX8	32K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	6 ms	SPI	262144 bit	4.5 V	OPERATES WITH 2.5V MIN @ 3MHZ	e3	30	260		.000001 Amp	4.9 mm	5
24LC02BTE/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel			256X8	256	-40 Cel	MATTE TIN	1010XXXR		DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V		e3		260		.000005 Amp	2.9 mm
24AA025E48-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	1.7V TO 2.5V @ 0.1MHz	e3	30	260		.000005 Amp	4.9 mm	5
M95512-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel			64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	4 ms	SPI	524288 bit	1.8 V		e4	30	260		.000001 Amp	4.9 mm
24LC1025-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	3		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel	MATTE TIN	1010MDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm	3
M24512-DRMF3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		65536 words	2.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.08X.12,20			50	.5 mm	125 Cel		TOTEM POLE	64KX8	64K	-40 Cel				DUAL			R-PDSO-N8	1	5.5 V	.8 mm		1 MHz	2 mm		4 ms	I2C	524288 bit	1.8 V							3 mm	5
24AA16T-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel			2KX8	2K	-40 Cel	MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz	e3		260		.000005 Amp	2.95 mm	2.5
93LC56BT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	YES	3/5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	8	EEPROMs	200	.95 mm	125 Cel	NO	TOTEM POLE	128X16	128	-40 Cel	Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.55 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V		e3	40	260		.000005 Amp	2.9 mm
M24M01-DWMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words				8	SMALL OUTLINE					1.27 mm	125 Cel			128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		1 MHz	3.9 mm		4 ms	I2C	1048576 bit	2.5 V		e4	30	260			4.9 mm
25LC040AT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	512 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	125 Cel			512X8	512	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	10 MHz	1.55 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V		e3		260		.000005 Amp	2.9 mm	5
24LC01BTE/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel	NO		128X8	128	-40 Cel	MATTE TIN	1010XXXR		DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3		260		.000005 Amp	2.95 mm
M24512-DRDW3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	125 Cel			64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	4 ms	I2C	524288 bit	1.8 V		e4	30	260		.00001 Amp	4.4 mm	5
M95M01-DWDW3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	125 Cel			128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	4 ms	SPI	1048576 bit	2.5 V		e4	30	260		.000002 Amp	4.4 mm
M24256-DRDW3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	32768 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	125 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	4 ms	I2C	262144 bit	1.8 V		e4	30	260		.00001 Amp	3 mm
24LC16B-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel			2KX8	2K	-40 Cel	Matte Tin (Sn)	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.