AUTOMOTIVE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
24LC512-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5	3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	125 Cel			64KX8	64K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.23 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e3	40	260		.000005 Amp	5.245 mm
25LC512T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel	MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz	e3	30	260		.00001 Amp	4.9 mm		5
24LC64T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5	3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	30	260		.000005 Amp	4.9 mm		4.5
24AA02E48T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	1.8/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	1		R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	1.7V TO 2.5V @ 0.1MHz	e3	30	260		.000005 Amp	4.9 mm		5
24LC512-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	125 Cel			64KX8	64K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm
BR93H56RF-2CE2	ROHM	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	4	3/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel			128X16	128	-40 Cel			DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.71 mm	1000000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	4 ms	MICROWIRE	2048 bit	2.5 V	SEATED HT-CALCULATED		NOT SPECIFIED	NOT SPECIFIED		.00001 Amp	5 mm
CAV24C64WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words	5		1	SMALL OUTLINE	SOP8,.25		100	1.27 mm	125 Cel	NO		64KX1	64K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	65536 bit	2.5 V		e4	30	260		.000005 Amp	4.9 mm	.0035 ns	5
24LC32A-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	125 Cel			4KX8	4K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	30	260		.000005 Amp	4.9 mm
CAV24C02WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.6		1	SMALL OUTLINE	SOP8,.25		100	1.27 mm	125 Cel		3-STATE	2KX1	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	100 YEAR DATA RETENTION	e4	NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	4.9 mm		3.6
M24256-DRMF3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		32768 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel			32KX8	32K	-40 Cel			DUAL			R-PDSO-N8	1	5.5 V	.8 mm		1 MHz	2 mm		4 ms	I2C	262144 bit	1.8 V							3 mm
M95512-DRDW3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	125 Cel			64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	4 ms	SPI	524288 bit	1.8 V		e4	30	260		.000001 Amp	4.4 mm
24LC256-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3	40	260		.000005 Amp	4.4 mm		4.5
CAV25256VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		32768 words	5		8	SMALL OUTLINE				1.27 mm	125 Cel			32KX8	32K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		10 MHz	3.9 mm		5 ms	SPI	262144 bit	2.5 V		e4	NOT SPECIFIED	NOT SPECIFIED			4.9 mm
24AA02E48-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	1.8/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @0.1MHZ	e3	30	260		.000005 Amp	4.9 mm		5
24LC1025T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	3	3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel	MATTE TIN	1010MDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm		3
M24M01-DWDW3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel			128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm		4 ms	I2C	1048576 bit	2.5 V		e4	30	260			4.4 mm
M95256-DWDW4TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	4 mA	32768 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	145 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	4 ms	SPI	262144 bit	2.5 V		e4	30	260		.000002 Amp	4.4 mm
25LC640-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5	5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel			8KX8	8K	-40 Cel	MATTE TIN		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	4.5 V		e3	30	260		.000005 Amp	4.9 mm		5
M95256-DRDW3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	125 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	4 ms	SPI	262144 bit	1.8 V		e4	30	260		.000001 Amp	4.4 mm
24LC64FT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3	40	260		.000005 Amp	2.9 mm		5
M95M01-DWDW4TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	4 mA	131072 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	145 Cel			128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	4 ms	SPI	1048576 bit	2.5 V		e4	30	260		.000002 Amp	4.4 mm
24LC128T-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		e3	40	260		.000005 Amp	4.4 mm		4.5
CAV24C16WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.6		1	SMALL OUTLINE	SOP8,.25		100	1.27 mm	125 Cel			16KX1	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	100 YEAR DATA RETENTION	e4	30	260		.000005 Amp	4.9 mm
24LC64-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5	3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	40	260		.000005 Amp	5.245 mm		4.5
25LC1024T-E/MF	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	200	1.27 mm	125 Cel			128KX8	128K	-40 Cel	MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	10 MHz	5 mm	Not Qualified	6 ms	SPI	1048576 bit	2.5 V	200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD	e3	40	260	NOR TYPE	.00002 Amp	6 mm		5
24LC32AF-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5	3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm		5
25AA256-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	125 Cel	NO	3-STATE	32KX8	32K	-40 Cel	MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V		e3	40	260		.000001 Amp	4.4 mm		1.8
M95512-DWDW4TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	65536 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	145 Cel			64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	4 ms	SPI	524288 bit	2.5 V		e4	30	260		.000002 Amp	4.4 mm
24C02C-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	1.5 ms	I2C	2048 bit	4.5 V		e3	30	260		.000005 Amp	4.9 mm		5
M95128-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		16384 words	2.5		8	SMALL OUTLINE				1.27 mm	125 Cel			16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		10 MHz	3.9 mm		4 ms	SPI	131072 bit	1.8 V		e4	30	260			4.9 mm
24LC256T-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	262144 bit	2.5 V						.000005 Amp	4.9 mm		4.5
24LC32AT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5	3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	125 Cel			4KX8	4K	-40 Cel	MATTE TIN	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3		260		.000005 Amp	2.9 mm
24LC08BT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	125 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	MATTE TIN	1010XMMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V		e3		260		.000005 Amp	2.9 mm		5
25LC1024T-E/SM16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		8	SMALL OUTLINE	SOP8,.3		200	1.27 mm	125 Cel			128KX8	128K	-40 Cel	MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	20 MHz	5.25 mm		6 ms	SPI	1048576 bit	2.5 V	ALSO OPERATES AT 10MHZ	e3	40	260		.00002 Amp	5.26 mm		5
25LC640A-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	125 Cel			8KX8	8K	-40 Cel			DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	65536 bit	2.5 V						.000005 Amp	4.9 mm		5
24AA16T-E/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	125 Cel			2KX8	2K	-40 Cel		1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm		5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz					.000005 Amp	2.9 mm		2.5
24LC256T-E/SNRVE	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	125 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	262144 bit	2.5 V						.000005 Amp	4.9 mm		4.5
M24256-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	32768 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	4 ms	I2C	262144 bit	1.8 V		e4	30	260		.00001 Amp	4.9 mm
24LC1025-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	3	3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel	Matte Tin (Sn) - annealed	1010MDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V		e3	40	260		.000005 Amp	5.26 mm		3
24LC16B-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	3/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	125 Cel			2KX8	2K	-40 Cel	MATTE TIN	1010MMMR	DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		e3		260		.000005 Amp	3 mm		5
25LC640AT-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5	3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel			8KX8	8K	-40 Cel	Matte Tin (Sn)		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm		5
24LC01BTE/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.95 mm	125 Cel			128X8	128	-40 Cel	MATTE TIN		DUAL			R-PDSO-G5		5.5 V	1.45 mm		.4 MHz	1.6 mm		5 ms	I2C	1024 bit	2.5 V		e3	30	260			2.9 mm
24LC16BHT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	3/5	8	SMALL OUTLINE	TSOP5/6,.11,37	EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel	Matte Tin (Sn)	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		e3	40	260		.000005 Amp	2.9 mm		5
25LC040AT-E/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	512 words	5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		200	.95 mm	125 Cel			512X8	512	-40 Cel	MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G6		5.5 V	1.45 mm	1000000 Write/Erase Cycles	10 MHz	1.55 mm		5 ms	SPI	4096 bit	2.5 V		e3				.000005 Amp	2.9 mm		5
M95320-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE				1.27 mm	125 Cel			4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		5 MHz	3.9 mm		4 ms	SPI	32768 bit	1.8 V		e4	30	260			4.9 mm
24LC1025T-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	3	3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel	Matte Tin (Sn) - annealed	1010MDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V		e3	40	260		.000005 Amp	5.26 mm		3
24LC256-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5	3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3	40	260		.000005 Amp	5.26 mm		4.5
M24C02-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE				1.27 mm	125 Cel			256X8	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		1 MHz	3.9 mm		4 ms	I2C	2048 bit	1.8 V		e4		260			4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.