AUTOMOTIVE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
24FC256-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3		260	.000005 Amp	4.4 mm	4.5
24LC024-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V		e3	40	260	.000005 Amp	4.4 mm	5
24LC128-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		e3	30	260	.000005 Amp	4.9 mm	4.5
24LC128-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		e3	40	260	.000005 Amp	4.4 mm	4.5
24LC128T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		e3	30	260	.000005 Amp	4.9 mm	4.5
24LC128T-E/ST16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			200	.65 mm	125 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	131072 bit	2.5 V					.000005 Amp	4.4 mm	5
24LC16B-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel			2KX8	2K	-40 Cel	MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		e3	40	260	.000005 Amp	4.4 mm	5
24LC16BT-E/MNY16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			200	.5 mm	125 Cel			2KX8	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	2.5 V		e4			.000005 Amp	3 mm	5
24LC32A-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel			4KX8	4K	-40 Cel	MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	40	260	.000005 Amp	4.4 mm
24LC32AT-E/MNY	Microchip Technology	EEPROM	AUTOMOTIVE	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		3/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	125 Cel			4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e4	40	260	.000005 Amp	3 mm
24LC512-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel			64KX8	64K	-40 Cel	MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e3	40	260	.000005 Amp	4.4 mm
24LC512T-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	125 Cel			64KX8	64K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.23 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e3	40	260	.000005 Amp	5.245 mm
24LC512T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	125 Cel			64KX8	64K	-40 Cel	MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e3	30	260	.000005 Amp	4.9 mm
24LC64T-E/MC	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3	40	260	.000005 Amp	3 mm	4.5
24LC64X-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	40	260	.000005 Amp	4.4 mm	4.5
24LC64XT-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	40	260	.000005 Amp	4.4 mm	4.5
25AA256-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	6 mA	32768 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	125 Cel	NO	3-STATE	32KX8	32K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V		e3			.000001 Amp	9.46 mm	1.8
25AA256-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	125 Cel	NO	3-STATE	32KX8	32K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	10 MHz	5.25 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V		e3	40	260	.000001 Amp	5.28 mm	1.8
25AA256T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel	NO	3-STATE	32KX8	32K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V		e3	30	260	.000001 Amp	4.9 mm	1.8
25LC020AT-E/MC	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	256 words	5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	125 Cel			256X8	256	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V		e3	40	260	.000005 Amp	3 mm	5
25LC128T-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel			16KX8	16K	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	131072 bit	2.5 V		e3	40	260	.000005 Amp	4.4 mm	5
25LC320AT-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel		3-STATE	4KX8	4K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	32768 bit	4.5 V	OPERATES WITH 2.5V MIN @ 5 MHZ	e3	30	260	.000005 Amp	4.9 mm	5
25LC640A-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	125 Cel			8KX8	8K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V		e3			.000005 Amp	9.271 mm	5
25LC640A-H/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	150 Cel		3-STATE	8KX8	8K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	6 ms	SPI	65536 bit	4.5 V	OPERATES WITH 2.5V MIN @ 3MHZ	e3	30	260	.000001 Amp	4.9 mm	5
34AA02T-E/MNY	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e4	40	260	.000005 Amp	3 mm	2.5
93C46C-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	125 Cel	NO	TOTEM POLE	64X16	64	-40 Cel	MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	4.5 V		e3	30	260	.000005 Amp	4.9 mm
93LC46BXT-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	3		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	125 Cel	NO	TOTEM POLE	64X16	64	-40 Cel	MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V		e3	30	260	.000005 Amp	4.9 mm
93LC56B-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	200	.65 mm	125 Cel	NO	TOTEM POLE	128X16	128	-40 Cel	Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V		e3	40	260	.000005 Amp	4.4 mm
93LC56C-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	YES	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	125 Cel	NO	TOTEM POLE	128X16	128	-40 Cel	MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V		e3	30	260	.000005 Amp	4.9 mm
93LC56C-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	200	.65 mm	125 Cel	NO	TOTEM POLE	128X16	128	-40 Cel	Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V		e3	40	260	.000005 Amp	4.4 mm
93LC56CT-E/SN15KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5			16	SMALL OUTLINE	SOP8,.23	8		200	1.27 mm	125 Cel			128X16	128	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm		6 ms	MICROWIRE	2048 bit	4.5 V		e3			.000005 Amp	4.9 mm
93LC86AT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel		TOTEM POLE	2KX8	2K	-40 Cel	Matte Tin (Sn)			DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	3 MHz	1.63 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	2.5 V		e3	40	260	.000005 Amp	2.95 mm
93LC86CT-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3		3/5	16	SMALL OUTLINE	SOP8,.23	8	EEPROMs	200	1.27 mm	125 Cel			1KX16	1K	-40 Cel	MATTE TIN			DUAL	1		R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	2.5 V		e3	30	260	.0001 Amp	4.9 mm	5
AT24C01C-SSPD-T	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	125 Cel		OPEN-DRAIN	128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e4			.000004 Amp	4.925 mm	5
AT24C128C-XPD-T	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		e4			.000006 Amp	4.4 mm	5
AT24C256C-XPD-T	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e4			.000006 Amp	4.4 mm	5
AT25640B-XPDGV-T	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	7 mA	8192 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	125 Cel	NO	3-STATE	8KX8	8K	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm		5 ms	SPI	65536 bit	2.5 V					.000009 Amp	4.4 mm	5
CAT93C57XE-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			3/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	125 Cel			128X16	128	-40 Cel				DUAL		SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit						.00001 Amp
CAT93C57XE-1.8-T2E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	125 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	1 MHz	5.23 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	5.255 mm	2.7
CAT93C76WE-TE13REVA	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			16	SMALL OUTLINE		8			1.27 mm	125 Cel			512X16	512	-40 Cel	MATTE TIN			DUAL			R-PDSO-G8		5.5 V	1.75 mm		3 MHz	3.9 mm	Not Qualified		MICROWIRE	8192 bit	2.5 V		e3				4.9 mm
NV24C04MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	125 Cel		OPEN-DRAIN	4KX1	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm		4 ms	I2C	4096 bit	2.5 V		e4	30	260		3 mm
CAT93C57XE-1.8-E	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			2/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	125 Cel			128X16	128	-40 Cel				DUAL		SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit						.00001 Amp
CAT93C57LE-1.8-GE	Onsemi	EEPROM CARD	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	9.27 mm	2.7
CAT93C56ZD4E-G	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	128 words			3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3			.00001 Amp
CAT93C76PE-REVA	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			16	IN-LINE		8			2.54 mm	125 Cel			512X16	512	-40 Cel	TIN LEAD			DUAL			R-PDIP-T8		5.5 V	4.57 mm		1 MHz	7.62 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V		e0				9.59 mm
CAT93C76VE-T2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			16	SMALL OUTLINE		8			1.27 mm	125 Cel			512X16	512	-40 Cel	MATTE TIN			DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V		e3	40	260		4.9 mm
CAT93C66YE-1.8-GT2E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	125 Cel			256X16	256	-40 Cel	MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	4.4 mm
CAT93C66YE-1.8-T3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words			2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.635 mm	125 Cel			256X16	256	-40 Cel				DUAL		SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit						.00001 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.