AUTOMOTIVE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT93C86WE-1.8TE13REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE		8			1.27 mm	125 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V			e3				4.9 mm
CAT93C56RD4E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE		8				125 Cel			128X16	128	-40 Cel		TIN LEAD			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	2048 bit	2.5 V			e0
CAT93C57UE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	125 Cel			128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.4 mm
CAT93C66WE-1.8-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words			2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel			256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit							.00001 Amp
CAT93C86WE-GT2REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE		8			1.27 mm	125 Cel			1KX16	1K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V			e4				4.9 mm
CAT93C66ZD4E-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8				125 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	4096 bit	1.8 V			e3
CAT93C66XE-T2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	125 Cel			256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	2 MHz	5.23 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	100 YEAR DATA RETENTION		e3	NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	5.255 mm
NV24C08MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	125 Cel		OPEN-DRAIN	8KX1	8K	-40 Cel		NICKEL PALLADIUM GOLD	1010DMMR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm		4 ms	I2C	8192 bit	2.5 V			e4	30	260		3 mm
CAT93C56YE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	6 V	1.1 mm	1000000 Write/Erase Cycles	.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e3			.00001 Amp	4.4 mm
CAT93C66JE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8		100	1.27 mm	125 Cel			256X16	256	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.9 mm
CAT93C56WE-GT2E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	4.9 mm		2.7
NV93C46RBMUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	64 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	8		100	.5 mm	125 Cel	NO	3-STATE	64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	2 MHz	2 mm		5 ms	MICROWIRE	1024 bit	2.5 V			e4	30	260	.000003 Amp	3 mm	250 ns	5
CAT93C57VE-T3E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	4.9 mm		2.7
CAT93C56WE-E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	4.9 mm		2.7
CAT93C66JE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8		100	1.27 mm	125 Cel			256X16	256	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.9 mm
CAT93C66ZD4E-1.8T3REVE	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8		100	.65 mm	125 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL			S-XDSO-N8		5.5 V	.8 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	100 YEAR DATA RETENTION		e3				3 mm
CAT93C57VE-GT3REVE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE		8			1.27 mm	125 Cel			128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8		5.5 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V			e4				4.9 mm
NV24C64UVLT2G	Onsemi	EEPROM	AUTOMOTIVE	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1 mA	65536 words		NO		1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	SSOP8,.12,20				.5 mm	125 Cel	NO		64KX1	64K	-40 Cel		Matte Tin (Sn)	1010DDDR	YES	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	.9 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		4 ms	I2C	65536 bit	1.7 V		32	e3	NOT SPECIFIED	260	.002 Amp	2.3 mm			YES
CAT93C66UE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	125 Cel			256X16	256	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.4 mm
CAT93C56XE-1.8-GE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	125 Cel			128X16	128	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V					.00001 Amp
CAT93C66ZD4E-1.8-T2	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	256 words			2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel			256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit							.00001 Amp
CAT93C57LE-1.8-E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN		e3			.00001 Amp	9.27 mm		2.7
CAT93C86YE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	125 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8	1	6 V	1.1 mm		1 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e3				4.4 mm
CAT93C86WE-1.8REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE		8			1.27 mm	125 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V			e3				4.9 mm
CAT93C76VE-T3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	NO	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel	NO		512X16	512	-40 Cel	NO			YES	DUAL	1	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	1 ms	MICROWIRE	8192 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	4.9 mm			YES
CAT93C86VE-TE13REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE		8			1.27 mm	125 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		6 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V			e3				4.9 mm
CAT93C66YE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	125 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e3				4.4 mm
CAT93C57ZD4E-1.8REVE	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL			S-XDSO-N8		5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V			e3	NOT SPECIFIED	260		3 mm
CAT93C57JE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE		8		100	1.27 mm	125 Cel			128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.9 mm
CAT93HC46UE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	125 Cel			64X16	64	-40 Cel		TIN LEAD			DUAL		SOFTWARE	R-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.25 MHz	3 mm	Not Qualified		MICROWIRE	1024 bit	1.8 V			e0			.00001 Amp	4.4 mm
CAT34C04HU4E-GT4	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	2.5			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	3.6 V	.55 mm		1 MHz	2 mm		4 ms	I2C	4096 bit	2.2 V	IT ALSO OPERATES AT 0.4 MHZ FREQUENCY AT 1.7 TO 3.6 V SUPPLY VOLTAGE		e4		260		3 mm
CAT93C66VE-1.8-GT2REVE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8		100	1.27 mm	125 Cel			256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8		5.5 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	100 YEAR DATA RETENTION		e4				4.9 mm
CAT93C66UE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	125 Cel			256X16	256	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.4 mm
CAT93C66WE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8		100	1.27 mm	125 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e3				4.9 mm
CAT93C66VE-1.8-E	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN		e3			.00001 Amp	4.9 mm
CAT93C46YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		64 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	125 Cel			64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		2 MHz	3 mm			MICROWIRE	1024 bit	1.8 V	100 YEAR DATA RETENTION		e4	30	260		4.4 mm
CAT93C86XE-TE13REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE		8			1.27 mm	125 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		6 V	2.03 mm		1 MHz	5.25 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V			e3				5.3 mm
CAT93C56ZD4E-1.8-T2E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN		e3			.00001 Amp	3 mm		2.7
CAT93C57JE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE		8		100	1.27 mm	125 Cel			128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.9 mm
CAT93C66KE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8		100	1.27 mm	125 Cel			256X16	256	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				5.3 mm
NV93C76BMUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.5 mm	125 Cel			512X16	512	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.55 mm		2 MHz	2 mm			MICROWIRE	8192 bit	2.5 V			e4	30	260		3 mm
CAT93C57KE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE		8		100	1.27 mm	125 Cel			128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				5.3 mm
CAT93C57XE-REVE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	3			16	SMALL OUTLINE		8			1.27 mm	125 Cel			128KX16	128K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V			e3				5.3 mm
CAT93C57ZD4E-1.8-G	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	128 words			2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e3			.00001 Amp
CAT93C66KE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8		100	1.27 mm	125 Cel			256X16	256	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8		6 V	2.03 mm		.25 MHz	5.25 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				5.3 mm
CAT93C56XE-1.8E	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	125 Cel			128X16	128	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles		5.23 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V						.00001 Amp	5.255 mm
CAT93C86ZD4E-REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE		8				125 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL			S-XDSO-N8	1	6 V			1 MHz		Not Qualified		MICROWIRE	16384 bit	2.5 V			e3
CAT93C57ZD4E-T2	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	128 words			3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e3			.00001 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.