COMMERCIAL EEPROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

CAT25C11L

Onsemi

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

5 mA

128 words

5

3/5

8

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

70 Cel

128X8

128

0 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDIP-T8

6 V

4.57 mm

1000000 Write/Erase Cycles

5 MHz

7.62 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e3

.000001 Amp

9.59 mm

CAT28LV64X-15T

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8 mA

8192 words

3.3

YES

3.3

8

SMALL OUTLINE

SOP28,.4

EEPROMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

Tin (Sn)

DUAL

R-PDSO-G28

3.6 V

2.65 mm

100000 Write/Erase Cycles

7.5 mm

Not Qualified

5 ms

65536 bit

3 V

32

e3

.0001 Amp

17.9 mm

150 ns

3

YES

CAT28C65BT-15TE13

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

18.4 mm

150 ns

5

CAT28C65BN-90T

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

30 mA

8192 words

5

YES

5

8

CHIP CARRIER

LDCC32,.5X.6

EEPROMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

YES

QUAD

R-PQCC-J32

1

5.5 V

3.55 mm

100000 Write/Erase Cycles

11.425 mm

Not Qualified

5 ms

65536 bit

4.5 V

32

.0001 Amp

13.965 mm

90 ns

5

YES

CAT24AC128W

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16384 words

3

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

16KX8

16K

0 Cel

MATTE TIN

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

6 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

131072 bit

2.5 V

e3

.000001 Amp

4.9 mm

CAT28C64BHFT13-15TE7

Onsemi

EEPROM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

2

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

11.8 mm

150 ns

5

CAT28C256FT13-15TE13

Onsemi

EEPROM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

2

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e0

11.8 mm

150 ns

5

CAT28C65BHT13-15TE13

Onsemi

EEPROM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

2

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

11.8 mm

150 ns

5

CAT24WC33W-1.8

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

4096 words

3

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

4KX8

4K

0 Cel

MATTE TIN

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

6 V

2.03 mm

1000000 Write/Erase Cycles

.1 MHz

5.25 mm

Not Qualified

10 ms

I2C

32768 bit

1.8 V

e3

.000001 Amp

5.3 mm

CAT25C32Y14-1.8TE13

Onsemi

EEPROM

COMMERCIAL

14

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4096 words

5

8

SMALL OUTLINE

70 Cel

4KX8

4K

0 Cel

DUAL

R-PDSO-G14

6 V

1 MHz

10 ms

SPI

32768 bit

1.8 V

NOT SPECIFIED

NOT SPECIFIED

CAT28C256HT13-15T

Onsemi

EEPROM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

2

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

100000 PROGRAM/ERASE CYCLES

e0

11.8 mm

150 ns

5

CAT24WC04R-1.8REV-F

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

70 Cel

512X8

512

0 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT28C64BJ-20TE13

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

1

5.5 V

2.65 mm

7.5 mm

Not Qualified

65536 bit

4.5 V

e0

17.9 mm

200 ns

5

CAT24WC01PREV-F

Onsemi

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

SERIAL

3 mA

128 words

3/5

8

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDIP-T8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24WC01GWEREV-C

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT28C512N-12T

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

50 mA

65536 words

5

YES

5

8

CHIP CARRIER

TSSOP32,.8,20

EEPROMs

1.27 mm

70 Cel

64KX8

64K

0 Cel

NO

QUAD

R-PQCC-J32

1

5.5 V

3.55 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

5 ms

524288 bit

4.5 V

128

.0002 Amp

13.97 mm

120 ns

5

YES

CAT25C17S

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

2048 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

2KX8

2K

0 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.75 mm

1000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

5 ms

SPI

16384 bit

2.5 V

e0

4.9 mm

CAT28C512P-12

Onsemi

EEPROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

65536 words

5

YES

5

8

IN-LINE

DIP32,.6

EEPROMs

100

2.54 mm

70 Cel

64KX8

64K

0 Cel

NO

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

5.08 mm

100000 Write/Erase Cycles

15.24 mm

Not Qualified

5 ms

524288 bit

4.5 V

10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS

128

e0

.0002 Amp

42.03 mm

120 ns

5

YES

CAT28C17AK-20TE13

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2048 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

2KX8

2K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

1

5.5 V

2.65 mm

7.5 mm

Not Qualified

16384 bit

4.5 V

e0

17.9 mm

200 ns

5

CAT28C512G-15

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

50 mA

65536 words

5

YES

5

8

CHIP CARRIER

LDCC32,.5X.6

EEPROMs

1.27 mm

70 Cel

64KX8

64K

0 Cel

NO

Tin (Sn)

QUAD

R-PQCC-J32

5.5 V

3.55 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

5 ms

524288 bit

4.5 V

128

e3

.0002 Amp

13.97 mm

150 ns

5

YES

CAT28C256HFN-25TE13

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

5.5 V

3.55 mm

11.43 mm

Not Qualified

262144 bit

4.5 V

e0

13.97 mm

250 ns

5

CAT24WC04GZ-1.8TE13REV-F

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

70 Cel

512X8

512

0 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT24WC03J-1.8TE13

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

256 words

3

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

256X8

256

0 Cel

TIN LEAD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

6 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

10 ms

I2C

2048 bit

1.8 V

1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION; SELF TIMED WRITE

e0

.0000009 Amp

4.9 mm

CAT25C05S

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

512 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

512X8

512

0 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.75 mm

1000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

5 ms

SPI

4096 bit

2.5 V

e0

4.9 mm

CAT24WC257W

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

32768 words

5

8

SMALL OUTLINE

SOP8,.25

100

1.27 mm

70 Cel

32KX8

32K

0 Cel

10100DDR

DUAL

1

HARDWARE

R-PDSO-G8

6 V

1.75 mm

100000 Write/Erase Cycles

.4 MHz

3.9 mm

10 ms

I2C

262144 bit

2.5 V

.000001 Amp

4.9 mm

CAT24WC02J-1.8TE13REV-C

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

256X8

256

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24WC03GY

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

70 Cel

256X8

256

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.0000009 Amp

CAT28LV64N-35TE13

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

CHIP CARRIER

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

3.6 V

3.55 mm

11.43 mm

Not Qualified

65536 bit

3 V

e0

13.97 mm

350 ns

3

CAT24WC02R-1.8

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

70 Cel

256X8

256

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT28LV65T13-30TE13

Onsemi

EEPROM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

2

3.6 V

1.2 mm

8 mm

Not Qualified

65536 bit

3 V

e0

11.8 mm

300 ns

3

CAT28LV64HT14-30TE13

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

3.6 V

1.2 mm

8 mm

Not Qualified

65536 bit

3 V

e0

12.4 mm

300 ns

3

CAT28LV65X-15T

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8 mA

8192 words

3.3

YES

3.3

8

SMALL OUTLINE

SOP28,.45

EEPROMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

MATTE TIN

YES

DUAL

R-PDSO-G28

3.6 V

2.65 mm

100000 Write/Erase Cycles

7.5 mm

Not Qualified

5 ms

65536 bit

3 V

32

e3

.0001 Amp

17.9 mm

150 ns

3

YES

CAT24WC01GYIREV-F

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT28C256G-15T

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

5

YES

5

8

CHIP CARRIER

LDCC32,.5X.6

EEPROMs

1.27 mm

70 Cel

32KX8

32K

0 Cel

NO

TIN

QUAD

R-PQCC-J32

5.5 V

3.55 mm

100000 Write/Erase Cycles

11.425 mm

Not Qualified

5 ms

262144 bit

4.5 V

64

e3

260

.00015 Amp

13.965 mm

150 ns

5

YES

CAT24WC04W-TE13

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

512X8

512

0 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT24WC01WEREV-C

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24WC08PREV-F

Onsemi

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

SERIAL

3 mA

1024 words

3/5

8

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

70 Cel

1KX8

1K

0 Cel

1010DMMR

DUAL

HARDWARE

R-PDIP-T8

1000000 Write/Erase Cycles

Not Qualified

I2C

8192 bit

.000001 Amp

CAT25010GL-1.8REV-C

Onsemi

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

128 words

5

8

IN-LINE

70 Cel

128X8

128

0 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDIP-T8

5.5 V

1 MHz

Not Qualified

5 ms

SPI

1024 bit

1.8 V

e4

CAT28C65BHFT14-20TE7

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

12.4 mm

200 ns

5

CAT28LV64P-30

Onsemi

EEPROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

IN-LINE

2.54 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

3.6 V

5.08 mm

15.24 mm

Not Qualified

5 ms

65536 bit

3 V

e0

36.695 mm

300 ns

3

CAT28C64BG-12TE13

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8192 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

8KX8

8K

0 Cel

MATTE TIN

QUAD

R-PQCC-J32

3

5.5 V

3.55 mm

11.43 mm

Not Qualified

65536 bit

4.5 V

e3

13.97 mm

120 ns

5

CAT25C11V-TE13

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

128 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

128X8

128

0 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.75 mm

1000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e3

.000001 Amp

4.9 mm

CAT28LV64X-25

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8 mA

8192 words

3.3

YES

3.3

8

SMALL OUTLINE

SOP28,.4

EEPROMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

Tin (Sn)

DUAL

R-PDSO-G28

3.6 V

2.65 mm

100000 Write/Erase Cycles

7.5 mm

Not Qualified

5 ms

65536 bit

3 V

32

e3

.0001 Amp

17.9 mm

250 ns

3

YES

CAT24WC01YEREV-F

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24WC01GLAREV-C

Onsemi

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

SERIAL

3 mA

128 words

3/5

8

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDIP-T8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT28C256HN-15TE7

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

5.5 V

3.55 mm

11.43 mm

Not Qualified

262144 bit

4.5 V

e0

13.97 mm

150 ns

5

CAT24WC128J-1.8TE13

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16384 words

5

8

SMALL OUTLINE

SOP8,.25

100

1.27 mm

70 Cel

16KX8

16K

0 Cel

1010XXXR

DUAL

HARDWARE

R-PDSO-G8

6 V

1.75 mm

100000 Write/Erase Cycles

.1 MHz

3.9 mm

10 ms

I2C

131072 bit

1.8 V

.000001 Amp

4.9 mm

5

CAT25C11GY

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

70 Cel

128X8

128

0 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

6 V

1.2 mm

5 MHz

3 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e4

4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.