COMMERCIAL EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT24WC03U-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	70 Cel	256X8	256		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V		e0	.0000009 Amp	4.4 mm
CAT28C64BJ-90T	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel	8KX8	8K	NO				DUAL		R-PDSO-G28	1	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		65536 bit	4.5 V	32		.0001 Amp	17.9 mm	90 ns	5	YES
CAT28C256N-12	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	32KX8	32K	NO	TIN LEAD			QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.425 mm	Not Qualified	5 ms		262144 bit	4.5 V	64	e0	.00015 Amp	13.965 mm	120 ns	5	YES
CAT24WC04P-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	512 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	512X8	512			1010DDMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit				.000001 Amp
CAT28C65BFP-12	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	70 Cel	8KX8	8K		TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	4.5 V		e0		36.703 mm	120 ns	5
CAT24WC256X-3	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words			3.3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	100	1.27 mm	70 Cel	32KX8	32K			10100DDR		DUAL	HARDWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	262144 bit				.000001 Amp
CAT28C17AN-20TE13	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		2048 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	2KX8	2K		TIN LEAD			QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified			16384 bit	4.5 V		e0		13.97 mm	200 ns	5
CAT24WC05GY	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	512X8	512			1010DDMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit				.0000009 Amp
CAT28LV65W-25T	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel	8KX8	8K	NO	MATTE TIN		YES	DUAL		R-PDSO-G28		3.6 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		65536 bit	3 V	32	e3	.0001 Amp	17.9 mm	250 ns	3	YES
CAT28LV256N-20	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	32KX8	32K	NO				QUAD		R-PQCC-J32	1	3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3 V	64		.00015 Amp	13.97 mm	200 ns	3	YES
CAT24WC02Y	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	256X8	256			1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit				.000001 Amp
CAT28C256HT14-20TE13	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	32KX8	32K		TIN LEAD			DUAL		R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V		e0		12.4 mm	200 ns	5
CAT25040Y-TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	512X8	512		MATTE TIN			DUAL		R-PDSO-G8	1	6 V	1.2 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V		e3		4.4 mm
CAT28LV64T14-30TE13	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	8KX8	8K		TIN LEAD			DUAL		R-PDSO-G32	2A	3.6 V	1.2 mm			8 mm	Not Qualified			65536 bit	3 V		e0		12.4 mm	300 ns	3
CAT24WC16GLREV-D	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	2KX8	2K			1010MMMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit				.000001 Amp
CAT24WC256J-3TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words			3.3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	32KX8	32K			10100DDR		DUAL	HARDWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	262144 bit				.000001 Amp
CAT24WC04GW-1.8TE13REV-F	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	512X8	512			1010DDMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit				.000001 Amp
CAT24WC01GWREV-F	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	128X8	128			1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit				.000001 Amp
CAT28C65BFJ-20TE7	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	8KX8	8K		TIN LEAD			DUAL		R-PDSO-G28	1	5.5 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	4.5 V		e0		17.9 mm	200 ns	5
CAT28C256FN-20TE7	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	32KX8	32K		TIN LEAD			QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified			262144 bit	4.5 V		e0		13.97 mm	200 ns	5
CAT25C03GV	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	256X8	256		NICKEL PALLADIUM GOLD			DUAL		R-PDSO-G8		6 V	1.75 mm		5 MHz	3.9 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V		e4		4.9 mm
CAT25C11GV-1.8	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	2.5			8	SMALL OUTLINE				1.27 mm	70 Cel	128X8	128		NICKEL PALLADIUM GOLD			DUAL		R-PDSO-G8		6 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V		e4		4.9 mm
CAT28C65BG-90	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	8KX8	8K	NO	MATTE TIN		YES	QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.425 mm	Not Qualified	5 ms		65536 bit	4.5 V	32	e3	.0001 Amp	13.965 mm	90 ns	5	YES
CAT28LV256G-20T	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	32KX8	32K	NO	Tin (Sn)			QUAD		R-PQCC-J32		3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3 V	64	e3	.00015 Amp	13.97 mm	200 ns	3	YES
CAT24WC04GZ-1.8REV-F	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	70 Cel	512X8	512			1010DDMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit				.000001 Amp
CAT24WC01GWEREV-E	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	128X8	128			1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit				.000001 Amp
CAT24WC16J-1.8TE13REV-D	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	2048 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	2KX8	2K			1010MMMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit				.000001 Amp
CAT24WC16JREV-D	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	2048 words			3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	2KX8	2K			1010MMMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit				.000001 Amp
CAT28C65BX-90	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE	SOP28,.45	EEPROMs		1.27 mm	70 Cel	8KX8	8K	NO	MATTE TIN		YES	DUAL		R-PDSO-G28	1	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		65536 bit	4.5 V	32	e3	.0001 Amp	17.9 mm	90 ns	5	YES
CAT24WC01GY-TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	128X8	128			1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit				.000001 Amp
CAT24WC01J-1.8TE13REV-F	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	128X8	128			1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit				.000001 Amp
CAT28LV64K-25TE7	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE				1.27 mm	70 Cel	8KX8	8K		TIN LEAD			DUAL		R-PDSO-G28	1	3.6 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	3 V		e0		17.9 mm	250 ns	3
CAT24WC16GL-1.8REV-D	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	2KX8	2K			1010MMMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit				.000001 Amp
CAT25010U-1.8	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	128X8	128		TIN LEAD			DUAL		R-PDSO-G8	1	6 V	1.2 mm		1 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V		e0		4.4 mm
CAT28C64BHT13-12TE13	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel	8KX8	8K		TIN LEAD			DUAL		R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V		e0		11.8 mm	120 ns	5
CAT28C16AP-20	Onsemi	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel	2KX8	2K	NO	TIN LEAD			DUAL		R-PDIP-T24		5.5 V	5.08 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		16384 bit	4.5 V		e0	.0001 Amp	31.875 mm	200 ns	5	YES
CAT24WC04Y-1.8	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	512X8	512			1010DDMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit				.000001 Amp
CAT24WC02Z-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	70 Cel	256X8	256			1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit				.000001 Amp
CAT28LV256T13-25	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel	32KX8	32K	NO	TIN LEAD			DUAL		R-PDSO-G28	2	3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	3 V	64	e0	.00015 Amp	11.8 mm	250 ns	3	YES
CAT28C64BHFT14-20TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	8KX8	8K		TIN LEAD			DUAL		R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V		e0		12.4 mm	200 ns	5
CAT28C65BH13-90	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		1.27 mm	70 Cel	8KX8	8K	NO	MATTE TIN		YES	DUAL		R-PDSO-G28	2	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V	32	e3	.0001 Amp	11.8 mm	90 ns	5	YES
CAT28C16AW-20TE13	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	2KX8	2K		MATTE TIN			DUAL		R-PDSO-G24	1	5.5 V	2.65 mm			7.5 mm	Not Qualified			16384 bit	4.5 V		e3		15.4 mm	200 ns	5
CAT28C65BHT14-20TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	8KX8	8K		TIN LEAD			DUAL		R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V		e0		12.4 mm	200 ns	5
CAT28C64BH13-15T	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel	8KX8	8K	NO	Matte Tin (Sn)			DUAL		R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V	32	e3	.0001 Amp	11.8 mm	150 ns	5	YES
CAT24WC01PIREV-C	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	128X8	128			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit				.000001 Amp
CAT24WC01WREV-E	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	128X8	128			1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit				.000001 Amp
CAT25020U-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	256X8	256		TIN LEAD			DUAL		R-PDSO-G8	1	6 V	1.2 mm		1 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V		e0		4.4 mm
CAT28C64BFN-15TE7	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	8KX8	8K		TIN LEAD			QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified			65536 bit	4.5 V		e0		13.97 mm	150 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.