COMMERCIAL EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT24WC04W-1.8REV-F	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	512X8	512			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT24WC03W	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	256X8	256		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3			.0000009 Amp	4.9 mm
CAT28LV64G-15	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	8KX8	8K	NO	Tin (Sn)		QUAD			R-PQCC-J32		3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		65536 bit	3 V		32	e3			.0001 Amp	13.97 mm	150 ns	3	YES
CAT24WC04Z-TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	70 Cel	512X8	512			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT25040GZ-1.8TE13REV-C	Onsemi	EEPROM	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE					70 Cel	512X8	512		NICKEL PALLADIUM GOLD		DUAL			S-PDSO-G8	1	5.5 V			1 MHz		Not Qualified	5 ms	SPI	4096 bit	1.8 V			e4
CAT25C05S-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	512 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	512X8	512		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	4096 bit	1.8 V			e0				4.9 mm
CAT28C257P-12	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	100	2.54 mm	70 Cel	32KX8	32K	NO	TIN LEAD		DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	128	e0			.00015 Amp	36.695 mm	120 ns	5	YES
CAT24WC01RAREV-E	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	70 Cel	128X8	128			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24AC128K-1.8	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3		2/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	100	1.27 mm	70 Cel	16KX8	16K		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		6 V	2.03 mm	1000000 Write/Erase Cycles	.1 MHz	5.25 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			e0			.000001 Amp	5.3 mm
CAT24WC08GW-1.8TE13REV-F	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	1024 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	1KX8	1K			1010DMMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT25010Z-1.8	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	128X8	128		MATTE TIN		DUAL			S-PDSO-G8	1	6 V	1.1 mm		1 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V			e3				3 mm
CAT28C16AN-20	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel	2KX8	2K	NO			QUAD			R-PQCC-J32		5.5 V	3.18 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		16384 bit	4.5 V				30	240	.0001 Amp	13.97 mm	200 ns	5	YES
CAT28C512T-12	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs		.5 mm	70 Cel	64KX8	64K	NO			DUAL			R-PDSO-G32	1	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		524288 bit	4.5 V		128				.0002 Amp	18.4 mm	120 ns	5	YES
CAT28C64BG-15TE7	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	8KX8	8K		MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified			65536 bit	4.5 V			e3				13.97 mm	150 ns	5
CAT28LV64N-30	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	CHIP CARRIER				1.27 mm	70 Cel	8KX8	8K		TIN LEAD		QUAD			R-PQCC-J32	3	3.6 V	3.55 mm			11.43 mm	Not Qualified	5 ms		65536 bit	3 V			e0				13.97 mm	300 ns	3
CAT24WC04UREV-F	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	512X8	512			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT28LV256N-35T	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	CHIP CARRIER				1.27 mm	70 Cel	32KX8	32K		TIN LEAD		QUAD			R-PQCC-J32	3	3.6 V	3.55 mm			11.43 mm	Not Qualified			262144 bit	3 V			e0				13.97 mm	350 ns	3
CAT24WC64K-TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words				8	SMALL OUTLINE	SOP8,.3		100	1.27 mm	70 Cel	8KX8	8K			1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	.1 MHz	5.25 mm		10 ms	I2C	65536 bit	2.5 V						.000001 Amp	5.3 mm
CAT28LV65K-35T	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE			100	1.27 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G28	1	3.6 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	3 V	100000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				17.9 mm	350 ns	3
CAT28C513HT14-15T	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words	5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	70 Cel	64KX8	64K		TIN LEAD		DUAL			R-PDSO-G40	2A	5.5 V	1.2 mm			10 mm	Not Qualified			524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0				12.4 mm	150 ns	5
CAT24WC01W-TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	128X8	128			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC04R-TE13REV-F	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	70 Cel	512X8	512			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT25C11P-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	128 words	2.5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	128X8	128		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V			e0			.000001 Amp	9.59 mm
CAT28LV64K-30TE7	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE				1.27 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G28	1	3.6 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	3 V			e0				17.9 mm	300 ns	3
CAT28LV256L-25T	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	IN-LINE				2.54 mm	70 Cel	32KX8	32K		MATTE TIN		DUAL			R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		262144 bit	3 V			e3				36.695 mm	250 ns	3
CAT28C512L12	Onsemi	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	70 Cel	64KX8	64K	NO	TIN		DUAL			R-PDIP-T32		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		524288 bit	4.5 V		128	e3		260	.0002 Amp	42.03 mm	120 ns	5	YES
CAT28C65BFT14-20TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0				12.4 mm	200 ns	5
CAT28C64BN-12TE13	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	8KX8	8K		TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified			65536 bit	4.5 V			e0				13.97 mm	120 ns	5
CAT25C64S-1.8	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V			e0			.000001 Amp	4.9 mm
CAT28LV256T14-35TE13	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	32KX8	32K		TIN LEAD		DUAL			R-PDSO-G32	2A	3.6 V	1.2 mm			8 mm	Not Qualified			262144 bit	3 V			e0				12.4 mm	350 ns	3
CAT24WC03Z	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	70 Cel	256X8	256		MATTE TIN	1010DDDR	DUAL		HARDWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3			.0000009 Amp	3 mm
CAT24WC32J-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words				8	SMALL OUTLINE	SOP8,.25		100	1.27 mm	70 Cel	4KX8	4K			1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm		10 ms	I2C	32768 bit	1.8 V						.000001 Amp	4.9 mm
CAT25010R-1.8TE13REV-C	Onsemi	EEPROM	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE					70 Cel	128X8	128		TIN LEAD		DUAL			S-PDSO-G8	1	5.5 V			1 MHz		Not Qualified	5 ms	SPI	1024 bit	1.8 V			e0
CAT24WC02GYREV-C	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	256X8	256			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC04Z-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	70 Cel	512X8	512			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT24WC256P-3	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	32768 words			3.3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	32KX8	32K			10100DDR	DUAL		HARDWARE	R-PDIP-T8				100000 Write/Erase Cycles			Not Qualified		I2C	262144 bit							.000001 Amp
CAT28LV65T14-35TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G32	2A	3.6 V	1.2 mm			8 mm	Not Qualified			65536 bit	3 V			e0				12.4 mm	350 ns	3
CAT24WC257X	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	5			8	SMALL OUTLINE	SOP8,.25		100	1.27 mm	70 Cel	32KX8	32K			10100DDR	DUAL	1	HARDWARE	R-PDSO-G8		6 V	1.75 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm		10 ms	I2C	262144 bit	2.5 V						.000001 Amp	4.9 mm
CAT25C33V	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	4KX8	4K		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	10 ms	SPI	32768 bit	2.5 V			e3				4.9 mm
CAT28C65BHFT14-12TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0				12.4 mm	120 ns	5
CAT28C65BX-15TE13	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	8KX8	8K		MATTE TIN		DUAL			R-PDSO-G28	1	5.5 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	4.5 V			e3				17.9 mm	150 ns	5
CAT24WC256P-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	32768 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	32KX8	32K			10100DDR	DUAL		HARDWARE	R-PDIP-T8				100000 Write/Erase Cycles			Not Qualified		I2C	262144 bit							.000001 Amp
CAT28C65BT14-20TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0				12.4 mm	200 ns	5
CAT24WC05R-TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	70 Cel	512X8	512		TIN LEAD	1010DDMR	DUAL		HARDWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V			e0			.0000009 Amp	3 mm
CAT28C257T13-12T	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE			100	.55 mm	70 Cel	32KX8	32K		TIN LEAD		DUAL			R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0				11.8 mm	120 ns	5
CAT28C64BFT14-20TE13	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0				12.4 mm	200 ns	5
CAT28C64BHFP-20	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	4.5 V			e0				36.703 mm	200 ns	5
CAT28LV65K-25TE7	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE				1.27 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G28	1	3.6 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	3 V			e0				17.9 mm	250 ns	3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.