COMMERCIAL EEPROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

CAT25C65U14-TE13

Onsemi

EEPROM

COMMERCIAL

14

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

10 mA

8192 words

5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP14,.25

EEPROMs

100

.65 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G14

6 V

1.2 mm

1000000 Write/Erase Cycles

3 MHz

4.4 mm

Not Qualified

10 ms

SPI

65536 bit

2.5 V

e0

.000001 Amp

5 mm

CAT28C512T-15

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

65536 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

EEPROMs

.5 mm

70 Cel

64KX8

64K

0 Cel

NO

DUAL

R-PDSO-G32

1

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

5 ms

524288 bit

4.5 V

128

.0002 Amp

18.4 mm

150 ns

5

YES

CAT28LV64T13-15T

Onsemi

EEPROM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8 mA

8192 words

3.3

YES

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

EEPROMs

.55 mm

70 Cel

8KX8

8K

0 Cel

NO

TIN LEAD

DUAL

R-PDSO-G28

2

3.6 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

5 ms

65536 bit

3 V

32

e0

.0001 Amp

11.8 mm

150 ns

3

YES

CAT25020U-TE13

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

70 Cel

256X8

256

0 Cel

TIN LEAD

DUAL

R-PDSO-G8

1

6 V

1.2 mm

5 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

2.5 V

e0

4.4 mm

CAT28LV64HT-35TE7

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

3.6 V

1.2 mm

8 mm

Not Qualified

65536 bit

3 V

e0

18.4 mm

350 ns

3

CAT28C512G12

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

50 mA

65536 words

5

YES

5

8

CHIP CARRIER

LDCC32,.5X.6

EEPROMs

1.27 mm

70 Cel

64KX8

64K

0 Cel

NO

TIN

QUAD

R-PQCC-J32

5.5 V

3.55 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

5 ms

524288 bit

4.5 V

128

e3

.0002 Amp

13.97 mm

120 ns

5

YES

CAT28LV64HK-35TE7

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

1

3.6 V

2.65 mm

7.5 mm

Not Qualified

65536 bit

3 V

e0

17.9 mm

350 ns

3

CAT28C65BFK-12TE13

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

1

5.5 V

2.65 mm

7.5 mm

Not Qualified

65536 bit

4.5 V

e0

17.9 mm

120 ns

5

CAT28LV64X-20T

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8 mA

8192 words

3.3

YES

3.3

8

SMALL OUTLINE

SOP28,.4

EEPROMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

Tin (Sn)

DUAL

R-PDSO-G28

3.6 V

2.65 mm

100000 Write/Erase Cycles

7.5 mm

Not Qualified

5 ms

65536 bit

3 V

32

e3

.0001 Amp

17.9 mm

200 ns

3

YES

CAT24WC02R

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

70 Cel

256X8

256

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24WC04U-TE13

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

70 Cel

512X8

512

0 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT28C65BN-15TE13

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8192 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

5.5 V

3.55 mm

11.43 mm

Not Qualified

65536 bit

4.5 V

e0

13.97 mm

150 ns

5

CAT28C65BW-15

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

8192 words

5

YES

5

8

SMALL OUTLINE

SOP28,.4

EEPROMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

MATTE TIN

YES

DUAL

R-PDSO-G28

1

5.5 V

2.65 mm

100000 Write/Erase Cycles

7.5 mm

Not Qualified

5 ms

65536 bit

4.5 V

32

e3

.0001 Amp

17.9 mm

150 ns

5

YES

CAT24WC01WEREV-E

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT25C09V

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

1024 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

1KX8

1K

0 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.75 mm

1000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

5 ms

SPI

8192 bit

2.5 V

e3

4.9 mm

CAT24WC08J-1.8TE13REV-F

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

1024 words

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

1KX8

1K

0 Cel

1010DMMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

8192 bit

.000001 Amp

CAT24WC01PAREV-F

Onsemi

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

SERIAL

3 mA

128 words

3/5

8

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDIP-T8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24WC02Z

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

70 Cel

256X8

256

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24WC256W-3

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

32768 words

3.3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

32KX8

32K

0 Cel

10100DDR

DUAL

HARDWARE

R-PDSO-G8

100000 Write/Erase Cycles

Not Qualified

I2C

262144 bit

.000001 Amp

CAT28C65BHN-15TE13

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8192 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

5.5 V

3.55 mm

11.43 mm

Not Qualified

65536 bit

4.5 V

e0

13.97 mm

150 ns

5

CAT24WC02YREV-E

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

70 Cel

256X8

256

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT28C65BN-15TE7

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8192 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

5.5 V

3.55 mm

11.43 mm

Not Qualified

65536 bit

4.5 V

e0

13.97 mm

150 ns

5

CAT24AC128J-1.8

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16384 words

3

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

16KX8

16K

0 Cel

TIN LEAD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

6 V

1.75 mm

1000000 Write/Erase Cycles

.1 MHz

3.9 mm

Not Qualified

5 ms

I2C

131072 bit

1.8 V

e0

.000001 Amp

4.9 mm

CAT25010L-1.8REV-C

Onsemi

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

128 words

5

8

IN-LINE

70 Cel

128X8

128

0 Cel

MATTE TIN

DUAL

R-PDIP-T8

5.5 V

1 MHz

Not Qualified

5 ms

SPI

1024 bit

1.8 V

e3

CAT28C65BJ-12T

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

8192 words

5

YES

5

8

SMALL OUTLINE

SOP28,.4

EEPROMs

100

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

TIN LEAD

YES

DUAL

R-PDSO-G28

1

5.5 V

2.65 mm

100000 Write/Erase Cycles

7.5 mm

Not Qualified

5 ms

65536 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS

32

e0

235

.0001 Amp

17.9 mm

120 ns

5

YES

CAT28C65BG-15TE13

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8192 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

8KX8

8K

0 Cel

MATTE TIN

QUAD

R-PQCC-J32

3

5.5 V

3.55 mm

11.43 mm

Not Qualified

65536 bit

4.5 V

e3

13.97 mm

150 ns

5

CAT28LV64HP-35

Onsemi

EEPROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

IN-LINE

2.54 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

3.6 V

5.08 mm

15.24 mm

Not Qualified

65536 bit

3 V

e0

36.703 mm

350 ns

3

CAT28C65BJ-90

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

8192 words

5

YES

5

8

SMALL OUTLINE

SOP28,.4

EEPROMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

TIN LEAD

YES

DUAL

R-PDSO-G28

1

5.5 V

2.65 mm

100000 Write/Erase Cycles

7.5 mm

Not Qualified

5 ms

65536 bit

4.5 V

32

e0

.0001 Amp

17.9 mm

90 ns

5

YES

CAT24WC04GL-1.8

Onsemi

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

SERIAL

3 mA

512 words

2/5

8

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

70 Cel

512X8

512

0 Cel

1010DDMR

DUAL

HARDWARE

R-PDIP-T8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT28C65BFJ-20TE13

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

1

5.5 V

2.65 mm

7.5 mm

Not Qualified

65536 bit

4.5 V

e0

17.9 mm

200 ns

5

CAT28C256T14-15TE7

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e0

12.4 mm

150 ns

5

CAT24WC129X-TE13

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16384 words

3

3/5

8

SMALL OUTLINE

SOP8,.3

EEPROMs

100

1.27 mm

70 Cel

16KX8

16K

0 Cel

MATTE TIN

1010XXXR

DUAL

HARDWARE

R-PDSO-G8

6 V

2.03 mm

100000 Write/Erase Cycles

.4 MHz

5.25 mm

Not Qualified

10 ms

I2C

131072 bit

2.5 V

e3

.000001 Amp

5.3 mm

CAT24WC05GW-1.8

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

512X8

512

0 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.0000009 Amp

CAT24WC02Y-TE13REV-C

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

70 Cel

256X8

256

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24WC64K-1.8

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

8192 words

8

SMALL OUTLINE

SOP8,.3

100

1.27 mm

70 Cel

8KX8

8K

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

5.5 V

2.03 mm

1000000 Write/Erase Cycles

.1 MHz

5.25 mm

10 ms

I2C

65536 bit

1.8 V

.000001 Amp

5.3 mm

CAT28LV256HN-25TE13

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

CHIP CARRIER

1.27 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

3.6 V

3.55 mm

11.43 mm

Not Qualified

262144 bit

3 V

e0

13.97 mm

250 ns

3

CAT28LV64J-35T

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE

100

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

1

3.6 V

2.65 mm

7.5 mm

Not Qualified

5 ms

65536 bit

3 V

100000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION

e0

17.9 mm

350 ns

3

CAT28C256HN-25TE13

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

5.5 V

3.55 mm

11.43 mm

Not Qualified

262144 bit

4.5 V

e0

13.97 mm

250 ns

5

CAT24WC04Z-1.8REV-F

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

70 Cel

512X8

512

0 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT25010L

Onsemi

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

128 words

5

8

IN-LINE

2.54 mm

70 Cel

128X8

128

0 Cel

MATTE TIN

DUAL

R-PDIP-T8

6 V

4.57 mm

5 MHz

7.62 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e3

9.36 mm

CAT28C64BHFT-20TE7

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

18.4 mm

200 ns

5

CAT28LV256N-30TE7

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

CHIP CARRIER

1.27 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

3.6 V

3.55 mm

11.43 mm

Not Qualified

262144 bit

3 V

e0

13.97 mm

300 ns

3

CAT24WC128U14-1.8TE13

Onsemi

EEPROM

COMMERCIAL

14

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16384 words

5

8

SMALL OUTLINE

TSSOP14,.25

100

.65 mm

70 Cel

16KX8

16K

0 Cel

1010XXXR

DUAL

HARDWARE

R-PDSO-G14

6 V

1.1 mm

100000 Write/Erase Cycles

.1 MHz

3 mm

10 ms

I2C

131072 bit

1.8 V

.000001 Amp

5 mm

5

CAT25020Z

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

70 Cel

256X8

256

0 Cel

MATTE TIN

DUAL

S-PDSO-G8

1

6 V

1.1 mm

5 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

2.5 V

e3

3 mm

CAT28C65BFT-20TE13

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

18.4 mm

200 ns

5

CAT28C65BT14-15TE13

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

12.4 mm

150 ns

5

CAT28C64BFT14-15TE13

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

12.4 mm

150 ns

5

CAT25C11Z

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

128 words

5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

70 Cel

128X8

128

0 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

S-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e3

.000001 Amp

3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.