COMMERCIAL EEPROM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28C64B-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K		NO	TIN LEAD			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225		.0001 Amp	13.97 mm	200 ns	5	YES
AT28LV256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		15 mA	32768 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K		NO	TIN LEAD			QUAD			R-PQCC-J32	2	3.465 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3.135 V	AUTOMATIC WRITE	64	e0		225		.00002 Amp	13.97 mm	200 ns	3	YES
XC17128EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		10 mA	131072 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel	3-STATE	128KX1	128K			Matte Tin (Sn)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	250		.00005 Amp	9.3599 mm
AT17LV256-10PC	Atmel	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		5 mA	262144 words		3.3		3.3	1	IN-LINE	DIP8,.3		EEPROMs		2.54 mm	70 Cel	3-STATE	256KX1	256K			TIN LEAD			DUAL			R-PDIP-T8	1	3.6 V	5.334 mm		10 MHz	7.62 mm	Not Qualified			262144 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0				.00005 Amp	9.271 mm	75 ns
AT24C04-10SC	Atmel	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	512 words		5		5	8	SMALL OUTLINE	SOP14,.25		EEPROMs	100	1.27 mm	70 Cel	OPEN-DRAIN	512X8	512			TIN LEAD	1010DDMR		DUAL		HARDWARE	R-PDSO-G14		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0				.000018 Amp	8.65 mm
AT24C16-10PC-2.7	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	2048 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel	OPEN-DRAIN	2KX8	2K			TIN LEAD	1010MMMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V	2-WIRE SERIAL INTERFACE		e0				.000004 Amp	9.59 mm
AT24C64-10PC	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	8192 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel	OPEN-DRAIN	8KX8	8K			TIN LEAD	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V	DATA RETENTION: 100 YEARS		e0				.000035 Amp	9.59 mm
AT25010-10PC	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		6 mA	128 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel	3-STATE	128X8	128			TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	4-WIRE SERIAL INTERFACE		e0				.0001 Amp	9.59 mm
AT25128N-10SC-2.7	Atmel	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		5 mA	16384 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	70 Cel		16KX8	16K			TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	131072 bit	2.7 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION > 200 YEARS; 100K ENDURANCE WRITE CYCLES		e0				.000002 Amp	4.9 mm
AT25128W-10SC	Atmel	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		5 mA	16384 words		5		5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	70 Cel		16KX8	16K			TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	100000 Write/Erase Cycles	3 MHz	5.27 mm	Not Qualified	5 ms	SPI	131072 bit	4.5 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION > 200 YEARS; 100K ENDURANCE WRITE CYCLES		e0		240		.000005 Amp	5.31 mm
AT28BV64B-25JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		15 mA	8192 words		3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	70 Cel		8KX8	8K		NO	Tin/Lead (Sn/Pb)			QUAD			R-PQCC-J32	2	3.6 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	2.7 V	100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS	64	e0	30	225		.00002 Amp	13.97 mm	250 ns	3	YES
AT28C16-25TC	Atmel	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	2048 words		5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	10	.55 mm	70 Cel	3-STATE	2KX8	2K		NO	TIN LEAD		YES	DUAL			R-PDSO-G28	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			16384 bit	4.5 V	AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION > 10 YEARS		e0		240		.0001 Amp	11.8 mm	250 ns	5	YES
AT28C256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K		NO	TIN LEAD			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225		.0002 Amp	13.97 mm	200 ns	5	YES
AT28C256-25TC	Atmel	EEPROM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL			50 mA	32768 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel		32KX8	32K		NO	TIN LEAD			DUAL			R-PDSO-G28	3			10000 Write/Erase Cycles			Not Qualified	10 ms		262144 bit			64	e0		240		.0002 Amp		250 ns		YES
AT28C256E-15SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K		NO	TIN LEAD			DUAL			R-PDSO-G28	2	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		240		.0002 Amp	17.9 mm	150 ns	5	YES
AT28C256E-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K		NO	TIN LEAD			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225		.0002 Amp	13.97 mm	200 ns	5	YES
AT28C64B-20SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		40 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K		NO	TIN LEAD			DUAL			R-PDSO-G28	2	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		240		.0001 Amp	17.9 mm	200 ns	5	YES
AT28C64B-25JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K		NO	TIN LEAD			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225		.0001 Amp	13.97 mm	250 ns	5	YES
AT28C64X-25PC	Microchip Technology	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	8192 words		5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs	10	2.54 mm	70 Cel	3-STATE	8KX8	8K		NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	1 ms		65536 bit	4.5 V	10K OR 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; SELF-TIMED BYTE WRITE CYCLE		e0				.0001 Amp	36.95 mm	250 ns	5	YES
AT28HC64B-55JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K		NO	TIN LEAD			QUAD			R-PQCC-J32	2	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225		.04 Amp	13.97 mm	55 ns	5	YES
AT28LV64B-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		15 mA	8192 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	8KX8	8K		NO	TIN LEAD			QUAD			R-PQCC-J32	2	3.63 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	2.97 V	AUTOMATIC WRITE	64	e0		225		.00002 Amp	13.97 mm	200 ns	3	YES
AT28LV64B-20TC	Atmel	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	8192 words		3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel	3-STATE	8KX8	8K		NO	TIN LEAD			DUAL			R-PDSO-G28	3	3.63 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		65536 bit	2.97 V	AUTOMATIC WRITE	64	e0		240		.00002 Amp	11.8 mm	200 ns	3	YES
AT93C56-10PC-2.7	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2 mA	128 words		3.3		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	70 Cel	3-STATE	128X16	128			TIN LEAD			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	3-WIRE SERIAL INTERFACE		e0				.00001 Amp	9.59 mm
EPC1064TC32	Altera	CONFIGURATION MEMORY	COMMERCIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	MOS		GULL WING	SERIAL	SYNCHRONOUS			65536 words	COMMON	5		5	1	FLATPACK, LOW PROFILE	TQFP32,.35SQ,32		OTP ROMs		.8 mm	70 Cel	3-STATE	64KX1	64K			TIN LEAD			QUAD			S-PQFP-G32	3	5.25 V	1.27 mm		4 MHz	7 mm	Not Qualified			65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES		e0		220			7 mm
FM93CS56LN	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1 mA	128 words		3.3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		128X16	128			TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified	15 ms	MICROWIRE	2048 bit	2.7 V			e0				.00001 Amp	9.817 mm
FM93CS66LM8X	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1 mA	256 words		3.3		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel		256X16	256			TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.25 MHz	3.9 mm	Not Qualified	15 ms	MICROWIRE	4096 bit	2.7 V			e0				.00001 Amp	4.9 mm
NM24C02LM8	National Semiconductor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256			Tin/Lead (Sn/Pb)	1010DDDR		DUAL			R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.8 MHz	3.9 mm	Not Qualified	15 ms	I2C	2048 bit	2.7 V	2 WIRE I2C INTERFACE; 16 BYTE PAGE WRITE; AUTOMATIC WRITE; DATA RETENTION > 40 YEARS		e0				.00001 Amp	4.9 mm
NM24C04M8X	National Semiconductor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			512 words		5			8	SMALL OUTLINE				40	1.27 mm	70 Cel	OPEN-DRAIN	512X8	512						DUAL			R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	16 BYTE PAGE WRITE; WRITE PROTECT; DATA RETENTION>40 YEARS							4.9 mm
NM93C66N	National Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1 mA	256 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	3-STATE	256X16	256			Tin/Lead (Sn/Pb)			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles		7.62 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; DATA RETENTION = 40 YEARS		e0				.00005 Amp	9.817 mm
NM93CS46N	National Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1 mA	64 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	3-STATE	64X16	64			Tin/Lead (Sn/Pb)			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V	40 YEARS DATA RETENTION; MICROWIRE BUS INTERFACE		e0				.00005 Amp	9.817 mm
TC58256FT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16K	30 mA	33554432 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		Flash Memories		.5 mm	70 Cel		32MX8	32M	2K	YES			YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			268435456 bit	3 V		512				NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC584000P	Toshiba	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words		5			8	IN-LINE					2.54 mm	70 Cel		512KX8	512K			TIN LEAD			DUAL			R-PDIP-T32		5.25 V	4.8 mm			15.24 mm	Not Qualified			4194304 bit	4.75 V	BULK ERASE; BLOCK ERASE		e0					42 mm	15000 ns	5
TC58DVM72A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	16777216 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		16MX8	16M	1K	YES	Tin/Lead (Sn/Pb)		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V		512	e0			NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
TMM2764AD-15	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			8192 words	COMMON	5		5	8	IN-LINE	DIP28,.6		EPROMs		2.54 mm	70 Cel	3-STATE	8KX8	8K			Tin/Lead (Sn/Pb)			DUAL			R-PDIP-T28		5.25 V	5.2 mm			15.24 mm	Not Qualified			65536 bit	4.75 V	LG-MAX		e0					37.7 mm	150 ns	5
X28HC64PZ-12	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			8192 words		5			8	IN-LINE					2.54 mm	70 Cel		8KX8	8K			MATTE TIN			DUAL			R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		65536 bit	4.5 V			e3					37.4 mm	120 ns	5
XC17256EPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		10 mA	262144 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel	3-STATE	256KX1	256K			Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	9.3599 mm
XC1765ELVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		5 mA	65536 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K			Matte Tin (Sn)			DUAL			R-PDSO-G8	3	3.6 V	1.1938 mm		2.5 MHz	3.937 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	260		.00005 Amp	4.9276 mm
XC17S50AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	559200 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	559200X1	559200			Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			559200 bit	3 V			e0	30	225		.001 Amp	4.9 mm
XC17S50AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	559200 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	559200X1	559200			Matte Tin (Sn)			DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			559200 bit	3 V			e3	30	260		.001 Amp	4.9 mm
24LC08B/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	1024 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel	OPEN-DRAIN	1KX8	1K			MATTE TIN	1010XMMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3					9.46 mm		5
24LC21/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	128 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel	OPEN-DRAIN	128X8	128			MATTE TIN	1010XXXR		DUAL	1		R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V			e3				.0001 Amp	9.46 mm		5
24LC21A/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	128 words		5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel	OPEN-DRAIN	128X8	128			MATTE TIN	1010000R		DUAL	1		R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V	2.5V TO 5.5V @ 0.1MHz		e3	30	260		.0001 Amp	4.9 mm		5
24LC21AT/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	128 words		5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel	OPEN-DRAIN	128X8	128			MATTE TIN	1010000R		DUAL	1		R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V	2.5V TO 5.5V @ 0.1MHz		e3	30	260		.0001 Amp	4.9 mm		5
24LC65T/SM	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		3 mA	8192 words		5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	70 Cel	OPEN-DRAIN	8KX8	8K			Matte Tin (Sn) - annealed	1010DDDR		DUAL	1		R-PDSO-G8	1	6 V	2.03 mm	1000000 Write/Erase Cycles	.1 MHz	5.25 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	40	260		.000005 Amp	5.28 mm		5
25LC080/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		5 mA	1024 words		5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel		1KX8	1K			MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V			e3	30	260		.000005 Amp	4.9 mm		5
93LC46A/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1.5 mA	128 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel		128X8	128			MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V			e3	30	260		.000001 Amp	4.9 mm		4.5
93LC46BT/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1.5 mA	64 words		4.5		3/5	16	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel		64X16	64			MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V			e3	30	260		.000001 Amp	4.9 mm		4.5
93LC66B/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1.5 mA	256 words		3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel		256X16	256			MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.32 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	2.5 V			e3				.000001 Amp	9.46 mm		3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.