COMMERCIAL EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT28C256L-15	Catalyst Semiconductor	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		32KX8	32K		NO	MATTE TIN			DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3				.00015 Amp	36.695 mm	150 ns	5	YES
CAT28C64BH13-12	Rochester Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8192 words		5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel		8KX8	8K			MATTE TIN			DUAL			R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	4.5 V			e3					11.8 mm	120 ns	5
CAT28C64BH13-90	Rochester Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8192 words		5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel		8KX8	8K						DUAL			R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED			11.8 mm	90 ns	5
CAT28C64BH1312	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel		8KX8	8K		NO	Matte Tin (Sn)			DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3				.0001 Amp	11.8 mm	120 ns	5	YES
CAT28C64BH1390	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel		8KX8	8K		NO	Matte Tin (Sn)			DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3				.0001 Amp	11.8 mm	90 ns	5	YES
CAT64LC10J	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	64 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel		64X16	64			TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V	SPI BUS INTERFACE		e0				.000003 Amp	4.9 mm
CAT64LC20S	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	128 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel		128X16	128			TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V	SPI BUS INTERFACE		e0				.000003 Amp	4.9 mm
CAT64LC40J	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			3 mA	256 words				3/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel		256X16	256						DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	4096 bit								.000003 Amp
X28HC64P-12	Intersil	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		40 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	100	2.54 mm	70 Cel		8KX8	8K		NO	TIN LEAD			DUAL			R-PDIP-T28		5.5 V	6.35 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION	64	e0				.0002 Amp	37.4 mm	120 ns	5	YES
24C02CT/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	70 Cel		256X8	256			MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	1 ms	I2C	2048 bit	4.5 V			e3	30	260		.00005 Amp	4.9 mm		5
24C65/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	8192 words		5		5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	70 Cel	OPEN-DRAIN	8KX8	8K			MATTE TIN	1010DDDR		DUAL	1		R-PDIP-T8		6 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	4.5 V			e3				.000005 Amp	9.46 mm		5
24LC04B/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	512 words		5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	70 Cel	OPEN-DRAIN	512X8	512			MATTE TIN	1010XXMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	4096 bit	4.5 V			e3				.0001 Amp	9.46 mm		5
AT17LV512-10JC	Atmel	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		5 mA	524288 words		3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs		1.27 mm	70 Cel		512KX1	512K			TIN LEAD			QUAD		HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			524288 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0		225			8.9662 mm
AT28C16-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		30 mA	2048 words		5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	2KX8	2K		NO	TIN LEAD			QUAD			R-PQCC-J32	2	5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	1 ms		16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0		225		.0001 Amp	13.97 mm	200 ns	5	YES
AT28HC256-90PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		80 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K		NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	37.0205 mm	90 ns	5	YES
AT88SC12816C-MJTG	Microchip Technology	EEPROM	COMMERCIAL	8	DIE	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			131072 words		3.3			1	MICROELECTRONIC ASSEMBLY	DIE OR CHIP				70 Cel		16KX8	128K			MATTE TIN			UNSPECIFIED	1		R-XXMA-X8		5.5 V			5 MHz		Not Qualified	7 ms	I2C	131072 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS OPERATION		e3						35 ns
FM24C04ULM8	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1 mA	512 words		3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	70 Cel		512X8	512			Tin/Lead (Sn/Pb)	1010DDMR		DUAL			R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	15 ms	I2C	4096 bit	2.7 V			e0				.00001 Amp	4.9 mm
FM24C04ULMT8	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1 mA	512 words		3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	70 Cel		512X8	512			Tin/Lead (Sn/Pb)	1010DDMR		DUAL			R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	15 ms	I2C	4096 bit	2.7 V			e0				.00001 Amp	4.4 mm
W27C512-45Z	Winbond Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words		5			8	IN-LINE				2.54 mm	70 Cel		64KX8	64K						DUAL			R-PDIP-T28		5.25 V	5.33 mm			15.24 mm	Not Qualified			524288 bit	4.75 V				NOT SPECIFIED	NOT SPECIFIED			37.08 mm	45 ns	12
X25020S	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	3-STATE	256X8	256			Tin/Lead (Sn/Pb)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS		e0				.00015 Amp	4.9 mm
X25020S-2.7	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	3-STATE	256X8	256			TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	2.7 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS		e0				.00015 Amp	4.9 mm
X25020ST1	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			256 words		5			8	SMALL OUTLINE			100	1.27 mm	70 Cel	3-STATE	256X8	256						DUAL			R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS							4.9 mm
XC1736EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		10 mA	36288 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	36288X1	36288			Matte Tin (Sn)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	250		.00005 Amp	9.3599 mm
24AA02T/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words		5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256			MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3	30	260			4.9 mm		5
24LC00/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2 mA	16 words		4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	70 Cel	OPEN-DRAIN	16X8	16			MATTE TIN	1010XXXR		DUAL	1		R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	4 ms	I2C	128 bit	2.5 V			e3				.000001 Amp	9.46 mm		4.5
24LC32A/SM	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	70 Cel		4KX8	4K			Matte Tin (Sn) - annealed	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	6 V		1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260		.000001 Amp	4.9 mm
25LC320/WF	Microchip Technology	EEPROM	COMMERCIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		5 mA	4096 words	SEPARATE	5			8	UNCASED CHIP	DIE OR CHIP		200		70 Cel	3-STATE	4KX8	4K						UPPER	1	HARDWARE	R-XUUC-N		5.5 V		1000000 Write/Erase Cycles	10 MHz			5 ms	SPI	32768 bit	4.5 V	ALSO OPERATES WITH 2.5V MIN @ 5MHZ AND 1.8VMIN @3MHZ									5
93LC66B/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1.5 mA	256 words		3		3/5	16	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	70 Cel		256X16	256			MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	2.5 V			e3	30	260		.000001 Amp	4.9 mm		3
AT28BV256-25SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel		32KX8	32K		NO	TIN LEAD			DUAL			R-PDSO-G28	2	3.6 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240		.00002 Amp	17.9 mm	250 ns	3	YES
AT28C256-20PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K		NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0002 Amp	37.0205 mm	200 ns	5	YES
AT28C64B-15JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K		NO	Tin/Lead (Sn/Pb)			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0	30	225		.0001 Amp	13.97 mm	150 ns	5	YES
AT28HC256-12PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		80 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K		NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	37.0205 mm	120 ns	5	YES
CAT28C16AW-20T	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		35 mA	2048 words		5		5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	100	1.27 mm	70 Cel		2KX8	2K		NO	TIN			DUAL			R-PDSO-G24	1	5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		16384 bit	4.5 V			e3	30	260		.0001 Amp	15.4 mm	200 ns	5	YES
HT24LC64(8DIP)	Holtek Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL			5 mA	8192 words				2.5/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	70 Cel		8KX8	8K				1010DDDR		DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit								.000004 Amp
TH58NVG5S0FTA20	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words		3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		4GX8	4G						DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				34359738368 bit	2.7 V								18.4 mm		3
X25020P	Xicor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	256 words		5		5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	3-STATE	256X8	256			Tin/Lead (Sn/Pb)			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.32 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS		e0				.00015 Amp	10.03 mm
24AA01/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	128 words		5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	70 Cel	OPEN-DRAIN	128X8	128			MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V			e3	30	260		.0001 Amp	4.9 mm		5
24AA02/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words		5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256			MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V			e3	30	260		.0001 Amp	4.9 mm		5
24AA65/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	8192 words		5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	70 Cel	OPEN-DRAIN	8KX8	8K			MATTE TIN	1010DDDR		DUAL	1		R-PDIP-T8		6 V	4.32 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			e3				.000005 Amp	9.46 mm		5
24LC02BT/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words		5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256			MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V			e3	30	260		.0001 Amp	4.9 mm		5
XC17256ELVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		5 mA	262144 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	256KX1	256K			Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	3.6 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	4.9276 mm
24AA04/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	512 words		5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	70 Cel	OPEN-DRAIN	512X8	512			MATTE TIN	1010XXMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V			e3	30	260		.0001 Amp	4.9 mm		5
24LC08B/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		3 mA	1024 words		5		3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	70 Cel	OPEN-DRAIN	1KX8	1K			MATTE TIN	1010XMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3	30	260			4.9 mm		5
AT24C16N-10SC-2.7	Atmel	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	2048 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	OPEN-DRAIN	2KX8	2K			TIN LEAD	1010MMMR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V	2-WIRE SERIAL INTERFACE		e0				.000004 Amp	4.89 mm
TC58DVG02A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	134217728 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		128MX8	128M	8K	YES			YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			1073741824 bit	2.7 V		512				NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
AT28C1024-15BC	Atmel	EEPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		100 mA	65536 words		5	YES	5	16	IN-LINE	DIP40,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	64KX16	64K		NO	TIN LEAD			DUAL			R-CDIP-T40		5.5 V	4.06 mm			15.24 mm	Not Qualified			1048576 bit	4.5 V	AUTOMATIC WRITE; PAGE WRITE	64	e0				.0004 Amp	50.755 mm	150 ns	5	YES
AT24C02-10SC	Atmel	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words		5		5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	100	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256			TIN LEAD	1010DDDR		DUAL		HARDWARE	R-PDSO-G14		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0				.000018 Amp	8.65 mm
AT28C16-20SC	Atmel	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	2048 words		5	NO	5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	10	1.27 mm	70 Cel	3-STATE	2KX8	2K		NO	TIN LEAD			DUAL			R-PDSO-G24		5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	1 ms		16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0				.0001 Amp	15.4 mm	200 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.