INDUSTRIAL EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
DS28E01Q-100+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words			3/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37		EEPROMs	40	.95 mm	85 Cel		1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed		DUAL		S-PDSO-N6	1	5.25 V	.8 mm	50000 Write/Erase Cycles		3 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260		3 mm
DS1972-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words		5	3/5	1	DISK BUTTON	BUTTON,.68IN		EEPROMs	10		85 Cel		1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS1985-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		16384 words	COMMON	5	3/5	1	DISK BUTTON	BUTTON,.68IN		Other Memory ICs			85 Cel		16KX1	16K	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		6 V					Not Qualified		1-WIRE	16384 bit	2.8 V	MICROLAN COMPATIBLE	e3					15000 ns
DS28CN01U+T	Analog Devices	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	1024 words		5.5	1.8/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		1KX1	1K	-40 Cel			DUAL		S-PDSO-G8		5.5 V	1.1 mm	200000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified			1024 bit	1.62 V			NOT SPECIFIED	NOT SPECIFIED	.0000055 Amp	3 mm		3
DS28E35P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		3.3		1	SMALL OUTLINE					1.27 mm	85 Cel		1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed		DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	1024 bit	2.97 V		e3	30	260		4.29 mm
DS28E01Q-100+U	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel		1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed		DUAL		S-PDSO-N6	1	5.25 V	.8 mm			3 mm			1-WIRE	1024 bit	2.8 V		e3	30	260		3 mm
DS28E05X+T	Analog Devices	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		112 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		112X8	112	-40 Cel			BOTTOM		S-PBGA-B4		3.63 V	.37 mm			.908 mm			1-WIRE	896 bit	1.71 V			NOT SPECIFIED	NOT SPECIFIED		.908 mm
DS28E15G+	Analog Devices	EEPROM	INDUSTRIAL	2	BCC	SQUARE	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		512 words		3.3		1	CHIP CARRIER					3 mm	85 Cel		512X1	512	-40 Cel			BOTTOM		S-XBCC-B2		3.63 V	.8 mm			3.5 mm			1-WIRE	512 bit	2.97 V			NOT SPECIFIED	NOT SPECIFIED		6.5 mm
DS28CN01U+	Analog Devices	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	1024 words		5.5	1.8/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		1KX1	1K	-40 Cel			DUAL		S-PDSO-G8		5.5 V	1.1 mm	200000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified			1024 bit	1.62 V			NOT SPECIFIED	NOT SPECIFIED	.0000055 Amp	3 mm		3
DS28E15G+T	Analog Devices	EEPROM	INDUSTRIAL	2	BCC	SQUARE	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		512 words		3.3		1	CHIP CARRIER					3 mm	85 Cel		512X1	512	-40 Cel	NICKEL GOLD PALLADIUM		BOTTOM		S-XBCC-B2		3.63 V	.8 mm			3.5 mm			1-WIRE	512 bit	2.97 V						6.5 mm
DS1971-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		32 words		5		8	DISK BUTTON						85 Cel		32X8	32	-40 Cel	Matte Tin (Sn) - annealed		END		O-MEDB-N2		6 V			.0163 MHz		Not Qualified		1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3
DS28E25Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		4096 words		3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel		4KX1	4K	-40 Cel	Matte Tin (Sn) - annealed		DUAL		S-PDSO-N6	1	3.63 V	.8 mm			3 mm			1-WIRE	4096 bit	2.97 V		e3	30	260		3 mm
DS28EL15Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		512 words		1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel		512X1	512	-40 Cel	Matte Tin (Sn) - annealed		DUAL		S-PDSO-N6	1	1.89 V	.8 mm			3 mm			1-WIRE	512 bit	1.71 V		e3	30	260		3 mm
DS1990R-F3#	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words		5		1	DISK BUTTON						85 Cel		64X1	64	-40 Cel			END		O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED
DS28E22Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		2048 words		3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel		2KX1	2K	-40 Cel	Matte Tin (Sn) - annealed		DUAL		S-PDSO-N6	1	3.63 V	.8 mm			3 mm			1-WIRE	2048 bit	2.97 V		e3	30	260		3 mm
DS28E05GB+T	Analog Devices	EEPROM	INDUSTRIAL	2	BCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		112 words				8	CHIP CARRIER					2.1 mm	85 Cel		112X8	112	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		R-XBCC-B2		3.63 V	.4 mm			3.5 mm			1-WIRE	896 bit	1.71 V		e4				5 mm
CAT93C46BHU4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		64 words		5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.5 mm	85 Cel		64X16	64	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-N8	1	5.5 V	.55 mm		4 MHz	2 mm			MICROWIRE	1024 bit	1.8 V	ALSO AVAILABLE 1.8-5.5V WITH 2MHZ FOR -40 TO 85 DEG CEL	e4	30	260		3 mm
CAT93C56VI-1.8-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V				.00001 Amp
CAT93C56VI-1.8-GREVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5		16	SMALL OUTLINE		8			1.27 mm	85 Cel		128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e4				4.9 mm
CAT93C57ZD4I-1.8-T2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words		5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	3 mm		2.7
CAT140169SWI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	2048 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		2KX8	2K	-40 Cel		1010MMMR	DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit						.000017 Amp
CAT93C56LA-1.8REVE	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5		16	IN-LINE		8			2.54 mm	105 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDIP-T8		5.5 V	5.33 mm		.25 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3				9.27 mm
CAT93C57VA-GE	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm		2.7
CAT93C76UI-1.8TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		512X16	512	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	1	5.5 V	1.1 mm		3 MHz	3 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V		e0				4.4 mm
CAT93C66AKI-2.5TE7	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words				16	SMALL OUTLINE					1.27 mm	85 Cel		256X16	256	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				5.3 mm
CAT93C86SI-1.8TE7	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words				8	SMALL OUTLINE		16			1.27 mm	85 Cel		2KX8	2K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	1.8 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				4.9 mm
CAT93C86WA-1.8-GT2C	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	1024 words			2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel		1KX16	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit						.00001 Amp
CAT93C57ZD4I-T3REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words		5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	85 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL		S-XDSO-N8		5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3	40	260		3 mm
CAT93C57XI-T2REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5		16	SMALL OUTLINE		8			1.27 mm	85 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	2.03 mm		.5 MHz	5.23 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3				5.255 mm
CAT93C86WA-1.8-T2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel		1KX16	1K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 1.8MIN	e3			.00001 Amp	4.9 mm
CAT130089TWI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		512X16	512	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	8192 bit						.00002 Amp
CAT64LC10JI-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	64 words		3.3	3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V	SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0			.000003 Amp	4.9 mm
CAT150081JWI-G	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words		5	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		8KX1	8K	-40 Cel	MATTE TIN		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		e3			.00002 Amp	4.9 mm		2.7
CAT93C56XA-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5	3/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	105 Cel		128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V				.00001 Amp
CAT93C56RD4A-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words		5		16	SMALL OUTLINE		8				105 Cel		128X16	128	-40 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	2048 bit	2.5 V		e0
CAT93C57XI-1.8REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		3		16	SMALL OUTLINE		8			1.27 mm	85 Cel		128KX16	128K	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	2.03 mm		.25 MHz	5.25 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V		e3				5.3 mm
CAT93C57ZD4A-GT2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words		5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	105 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm		2.7
CAT93C86WA-T3C	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	1024 words			3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel		1KX16	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit						.00001 Amp
CAT93C66LI-1.8-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel		256X16	256	-40 Cel			DUAL	SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit						.00001 Amp
CAT93C56VA-1.8T3REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5		16	SMALL OUTLINE		8			1.27 mm	105 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3				4.9 mm
CAT93C66AKI-2.7TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words				16	SMALL OUTLINE					1.27 mm	85 Cel		256X16	256	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				5.3 mm
CAT150021JWI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5	5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V		e4			.00002 Amp	4.9 mm
CAT93C46RVP2I-GT2	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	64 words		5	2/5	16	SMALL OUTLINE	SOLCC8,.11,20	8	EEPROMs	100	.5 mm	85 Cel		64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	SOFTWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified		MICROWIRE	1024 bit	1.8 V		e4			.00001 Amp	3 mm
CAT93C86VA-T2C	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	1024 words			3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel		1KX16	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit						.00001 Amp
CAT93C57PI-2.7	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words				8	IN-LINE		16			2.54 mm	85 Cel		256X8	256	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				9.27 mm
CAT93C56SA-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5		16	SMALL OUTLINE		8		100	1.27 mm	105 Cel		128X16	128	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0	30	240		4.9 mm
CAT93C56AKI-2.7TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words				16	SMALL OUTLINE					1.27 mm	85 Cel		128X16	128	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				5.3 mm
LE25CB1282M	Onsemi	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16384 words				8	SMALL OUTLINE, LOW PROFILE					1.27 mm	85 Cel		16KX8	16K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.7 mm		5 MHz	4.4 mm	Not Qualified	5 ms	SPI	131072 bit	2.7 V						5 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.