INDUSTRIAL EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
CAT150161LWI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	5	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	16KX1	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V		e4			.00002 Amp	4.9 mm
CAT93C86PA-REVC	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	5		16	IN-LINE		8			2.54 mm	105 Cel	1KX16	1K	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V		e0				9.36 mm
CAT93C86VA-REVC	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8			1.27 mm	105 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V		e3				4.9 mm
CAT93C57XA-1.8-E	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words		2/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	105 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit						.00001 Amp
CAT93C66YI-T3E	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	85 Cel	256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	4.4 mm
CAT93C66ZD4A-1.8-E	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	105 Cel	256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	3 mm
CAT93C57YA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	105 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	6 V	1.1 mm	1000000 Write/Erase Cycles	.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3			.00001 Amp	4.4 mm
CAT130019TWI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	64 words		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	64X16	64	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit
CAT93C57WI-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8		100	1.27 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3				4.9 mm
CAT130011ZWI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	64 words		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	64X16	64	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit
CAT93C57WI-GE	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm	2.7
CAT150021MWI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	5	5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V		e4			.00002 Amp	4.9 mm
CAT93C86XA-TE13REVC	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8			1.27 mm	105 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	2.03 mm		1 MHz	5.25 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V		e3				5.3 mm
CAT93C66JI-2.7TE7	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words			8	SMALL OUTLINE		16			1.27 mm	85 Cel	512X8	512	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				4.9 mm
CAT93C56WI-1.8T2REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8			1.27 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3				4.9 mm
CAT93C56ZD4I-REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL		S-XDSO-N8		5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3				3 mm
CAT93C66SI-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8		100	1.27 mm	85 Cel	256X16	256	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				4.9 mm
CAT64LC40JATE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	4.5	3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	105 Cel	256X16	256	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	10 ms	SPI	4096 bit	2.5 V		e0			.000003 Amp
CAT140081RWI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words	3	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	8KX1	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DMMR	DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V		e4			.000017 Amp	4.9 mm	3
CAT93C56AKI-2.7TE7	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words			16	SMALL OUTLINE					1.27 mm	85 Cel	128X16	128	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				5.3 mm
CAT93C66WA-1.8-GE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel	256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	4.9 mm
CAT93C56WI-E	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm	2.7
CAT93C56WI-1.8-T3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V				.00001 Amp
CAS24LS128C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel	16KX8	16K	-40 Cel	TIN SILVER COPPER		BOTTOM		S-PBGA-B4		5.5 V	.3 mm		1 MHz	.84 mm		5 ms	I2C	131072 bit	1.6 V		e1				.84 mm
CAT93C66ZD4A-T2E	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	105 Cel	256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm
CAT93C86XA	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8		100	1.27 mm	105 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	2.03 mm		1 MHz	5.25 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3				5.3 mm
CAT93C56JI-1.8TE7	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE		16			1.27 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				4.9 mm
CAT93C56XAE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	105 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles		5.23 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V					.00001 Amp	5.255 mm
CAT93C56WI-T3REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8			1.27 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3				4.9 mm
CAT93C56YA-1.8-GREVE	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	105 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.2 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e4				4.4 mm
CAT93C56API	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5		16	IN-LINE					2.54 mm	85 Cel	128X16	128	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8		5.5 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				9.36 mm
CAT34FC02YI	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	85 Cel	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT93C76RD4I-TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				85 Cel	512X16	512	-40 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	5.5 V			1 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e0
CAT140041JWI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words	5	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	4KX1	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V		e4			.000017 Amp	4.9 mm	5
CAT93C57WI-E	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm	2.7
CAT1026ZD4I-25-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		3 mA	256 words	3	3	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel	256X8	256	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.00005 Amp
CAT130169RWI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	1024 words		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	1KX16	1K	-40 Cel			DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit
CAT93HC46PA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	5	2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	105 Cel	64X16	64	-40 Cel	TIN LEAD		DUAL	SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified		MICROWIRE	1024 bit	1.8 V		e0			.00001 Amp	9.59 mm
CAT93C86WI-T3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm
CAT93C86ASI-2.5TE7	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words			16	SMALL OUTLINE					1.27 mm	85 Cel	1KX16	1K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	2.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				4.9 mm
CAT93C46RXI-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	64 words		2/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	85 Cel	64X16	64	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit						.00001 Amp
CAT1640WI-28-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	8192 words		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit			e4		260	.00004 Amp
CAT93C56PI-2.5	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words			8	IN-LINE		16			2.54 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				9.36 mm
CAT93C76VA-TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8			1.27 mm	105 Cel	512X16	512	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3 MHz	3.9 mm	Not Qualified		MICROWIRE	8192 bit	2.5 V		e3				4.9 mm
CAT93C56VP2I-G	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	128 words	5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	8	EEPROMs	100	.5 mm	85 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	SOFTWARE	R-XDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e4			.000002 Amp	3 mm
CAT150169ZWI-G	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN		DUAL	HARDWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		SPI	16384 bit			e3			.00002 Amp		2.7
CAT93C86YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel	1KX16	1K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		2 MHz	3 mm			MICROWIRE	16384 bit	1.8 V		e4	30	260		4.4 mm
CAT93C66WIT3REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8		100	1.27 mm	85 Cel	256X16	256	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	100 YEAR DATA RETENTION	e3				4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.