Infineon Technologies EEPROM 294

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL01GS12FHIV23	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			1073741824 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL512S12FHIV13	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			536870912 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL512S11FHI023	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			536870912 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL01GS12FHIV20	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			1073741824 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL01GS11FHI020	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			1073741824 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL256S10FHI013	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			268435456 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL128S10FHI020	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			134217728 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL256S10FHI020	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			268435456 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL256S10FHI023	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			268435456 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
SLA25C160-D	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			2048 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	2KX8	2K	-40 Cel			TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.7 mm	1000000000 Write/Erase Cycles	2.1 MHz	7.62 mm	Not Qualified	8 ms	SPI	16384 bit	2.7 V	SPI BUS INTERFACE; 32 BYTE PAGE MODE; 40 YEARS DATA RETENTION		e0					9.4 mm
SLA25C010-S	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			128 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	128X8	128	-40 Cel			TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified		SPI	1024 bit	2.7 V			e0					4.9 mm
SLA25C040-S	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			512 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	512X8	512	-40 Cel			TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified	8 ms	SPI	4096 bit	2.7 V	SPI BUS SERIAL INTERFACE; 40 YEARS DATA RETENTION; 8 BYTE PAGE MODE		e0					4.9 mm
SLE4406SPED	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			512 words	5			1	UNCASED CHIP					80 Cel	512X1	512	-40 Cel						UPPER		R-XUUC-N		5.5 V					Not Qualified			512 bit	4.5 V											5
SDA3526-5	Infineon Technologies	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	SERIAL			20 mA	256 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	70 Cel	256X8	256	0 Cel			Tin/Lead (Sn/Pb)	1010DDDR		DUAL	HARDWARE	R-PDIP-T8				100000 Write/Erase Cycles			Not Qualified		I2C	2048 bit				e0				.02 Amp
SLA25C010-S/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			128 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	128X8	128	-40 Cel			TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified		SPI	1024 bit	2.7 V			e0					4.9 mm
SLE5528M3	Infineon Technologies	EEPROM	INDUSTRIAL		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			1024 words	5			8	MICROELECTRONIC ASSEMBLY					100 Cel	1KX8	1K	-40 Cel						DUAL		R-XDMA-N		5.5 V					Not Qualified			8192 bit	4.5 V											5
SLE5532M3	Infineon Technologies	EEPROM	OTHER		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			256 words	5			8	MICROELECTRONIC ASSEMBLY					80 Cel	256X8	256	-40 Cel						DUAL		R-XDMA-N		5.5 V					Not Qualified	5 ms		2048 bit	4.5 V											5
SDA3546-5	Infineon Technologies	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	SERIAL			20 mA	512 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	70 Cel	512X8	512	0 Cel			Tin/Lead (Sn/Pb)	10100MDR		DUAL	HARDWARE	R-PDIP-T8				100000 Write/Erase Cycles			Not Qualified		I2C	4096 bit				e0				.02 Amp
SLE25C040-S	Infineon Technologies	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			512 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel	512X8	512	-40 Cel			TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified	8 ms	SPI	4096 bit	2.7 V	SPI BUS SERIAL INTERFACE; 40 YEARS DATA RETENTION; 8 BYTE PAGE MODE		e0					4.9 mm
SLA25C020-D	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			256 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	256X8	256	-40 Cel			Tin/Lead (Sn/Pb)			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.7 mm	1000000000 Write/Erase Cycles	2.1 MHz	7.62 mm	Not Qualified		SPI	2048 bit	2.7 V			e0					9.4 mm
SLA24C64-D/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	8192 words	3		5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	8KX8	8K	-40 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.7 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified		I2C	65536 bit	2.7 V			e0				.000001 Amp	9.4 mm
SLA25C040-D/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			512 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	512X8	512	-40 Cel			TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.7 mm	1000000000 Write/Erase Cycles	2.1 MHz	7.62 mm	Not Qualified	8 ms	SPI	4096 bit	2.7 V	SPI BUS SERIAL INTERFACE; 40 YEARS DATA RETENTION; 8 BYTE PAGE MODE		e0					9.4 mm
SDE2506K	Infineon Technologies	EEPROM	INDUSTRIAL	9				YES		MOS		SERIAL			3 mA	128 words	5		5	8		TAB,9PINS,.024	EEPROMs	10	.6 mm	110 Cel	128X8	128	-40 Cel												100000 Write/Erase Cycles			Not Qualified			1024 bit								.003 Amp
SDE2526	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	SERIAL			10 mA	256 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs		2.54 mm	110 Cel	256X8	256	-40 Cel			Tin/Lead (Sn/Pb)	1010DDDR		DUAL		R-PDIP-T8							Not Qualified		I2C	2048 bit				e0				.01 Amp
SDE2516	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	SERIAL			8 mA	128 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	110 Cel	128X8	128	-40 Cel			Tin/Lead (Sn/Pb)	1010DDDR		DUAL		R-PDIP-T8				100000 Write/Erase Cycles			Not Qualified		I2C	1024 bit				e0				.008 Amp
SLE25C020-S/P	Infineon Technologies	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			256 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel	256X8	256	-40 Cel			Tin/Lead (Sn/Pb)			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified		SPI	2048 bit	2.7 V			e0					4.9 mm
SDA25X16-5	Infineon Technologies	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		20 mA	128 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	70 Cel	128X8	128	0 Cel			TIN LEAD	1010DDDR		DUAL		R-PDIP-T8		5.25 V	4.37 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	20 ms	I2C	1024 bit	4.75 V			e0				.02 Amp	9.52 mm
SLA24C01-D/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	128 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	128X8	128	-40 Cel			Tin/Lead (Sn/Pb)	1010XXXR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.7 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	1024 bit	4.5 V			e0				.00005 Amp	9.4 mm
SLA25C010-D/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			128 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	128X8	128	-40 Cel			TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.7 mm	1000000000 Write/Erase Cycles	2.1 MHz	7.62 mm	Not Qualified		SPI	1024 bit	2.7 V			e0					9.4 mm
SLA24C08-S	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	1024 words	5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	1KX8	1K	-40 Cel			TIN LEAD	1010MMMR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.94 mm	Not Qualified	8 ms	I2C	8192 bit	4.5 V			e0				.00005 Amp	4.93 mm
SLA24C164-D/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	2048 words	3		5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	2KX8	2K	-40 Cel			TIN LEAD	1DDDMMMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.7 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified		I2C	16384 bit	2.7 V			e0				.00005 Amp	9.4 mm
SDA25X86-5	Infineon Technologies	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		20 mA	1024 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	70 Cel	1KX8	1K	0 Cel			TIN LEAD	1010MMDR		DUAL		R-PDIP-T8		5.25 V	4.37 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	20 ms	I2C	8192 bit	4.75 V			e0				.02 Amp	9.52 mm
SLA24C08-D-3/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	1024 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	1KX8	1K	-40 Cel			Tin/Lead (Sn/Pb)	1010XMMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.37 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	8192 bit	2.7 V			e0				.00005 Amp	9.52 mm
SLE24C16-D/P	Infineon Technologies	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	2048 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	125 Cel	2KX8	2K	-40 Cel			TIN LEAD	1010MMMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.7 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	16384 bit	4.5 V			e0				.00005 Amp	9.4 mm
SLE24C64-D/P	Infineon Technologies	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	8192 words	3		5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	125 Cel	8KX8	8K	-40 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.7 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified		I2C	65536 bit	2.7 V			e0				.000001 Amp	9.4 mm
SLE4406C	Infineon Technologies	EEPROM	COMMERCIAL EXTENDED				PLASTIC/EPOXY			CMOS		SERIAL			3 mA		5		5			WAFER	EEPROMs			80 Cel			-35 Cel															Not Qualified
SLE5528C	Infineon Technologies	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			1024 words	5		5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		100 Cel	1KX8	1K	-40 Cel						UPPER	SOFTWARE	R-XUUC-N		5.5 V		100000 Write/Erase Cycles			Not Qualified			8192 bit	4.5 V											5
SLA24C16-S-3/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	2048 words	5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	2KX8	2K	-40 Cel			Tin/Lead (Sn/Pb)	1010MMMR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.1 MHz	4 mm	Not Qualified	8 ms	I2C	16384 bit	2.7 V			e0				.00005 Amp	5 mm
SLE5518M3	Infineon Technologies	EEPROM	INDUSTRIAL		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			1024 words	5			8	MICROELECTRONIC ASSEMBLY					100 Cel	1KX8	1K	-40 Cel						DUAL		R-XDMA-N		5.5 V					Not Qualified			8192 bit	4.5 V											5
SLE25C010-D	Infineon Technologies	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			128 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	125 Cel	128X8	128	-40 Cel			TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.7 mm	1000000000 Write/Erase Cycles	2.1 MHz	7.62 mm	Not Qualified		SPI	1024 bit	2.7 V			e0					9.4 mm
SLA24C64-S/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	8192 words	3		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	8KX8	8K	-40 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.94 mm	Not Qualified		I2C	65536 bit	2.7 V			e0				.000001 Amp	4.93 mm
SLA24C04-S-3	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	512 words	5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	512X8	512	-40 Cel			Tin/Lead (Sn/Pb)	1010XXMR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.1 MHz	4 mm	Not Qualified	8 ms	I2C	4096 bit	2.7 V			e0				.00005 Amp	5 mm
SLA24C64-S	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	8192 words	3		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	8KX8	8K	-40 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.94 mm	Not Qualified		I2C	65536 bit	2.7 V			e0				.000001 Amp	4.93 mm
SLA25C160-S/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2048 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	2KX8	2K	-40 Cel			TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified	8 ms	SPI	16384 bit	2.7 V	SPI BUS INTERFACE; 32 BYTE PAGE MODE; 40 YEARS DATA RETENTION		e0					4.9 mm
SLE5518D	Infineon Technologies	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			1024 words	5		5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		100 Cel	1KX8	1K	-40 Cel						UPPER	SOFTWARE	R-XUUC-N		5.5 V		100000 Write/Erase Cycles			Not Qualified			8192 bit	4.5 V											5
SLE24C01-D/P	Infineon Technologies	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	128 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	125 Cel	128X8	128	-40 Cel			Tin/Lead (Sn/Pb)	1010XXXR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.7 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	1024 bit	4.5 V			e0				.00005 Amp	9.4 mm
SLA24C164-D-3/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	2048 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	2KX8	2K	-40 Cel			TIN LEAD	1DDDMMMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.37 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	16384 bit	2.7 V			e0				.00005 Amp	9.52 mm
SLE24C02-S/P	Infineon Technologies	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words	5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel	256X8	256	-40 Cel			Tin/Lead (Sn/Pb)	1010XXXR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.94 mm	Not Qualified	8 ms	I2C	2048 bit	4.5 V			e0				.00005 Amp	4.93 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.