Infineon Technologies EEPROM 294

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Programming Voltage (V)
SLA24C16-D-3/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	2KX8	2K	-40 Cel	Tin/Lead (Sn/Pb)	1010MMMR	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	4.37 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	16384 bit	2.7 V		e0	.00005 Amp	9.52 mm
SLA25C01-S	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		8	SMALL OUTLINE				1.27 mm	85 Cel	128X8	128	-40 Cel			DUAL		R-PDSO-G8	5.5 V	1.75 mm		2 MHz	4 mm	Not Qualified	6 ms	SPI	1024 bit	4.5 V				5 mm
SLE25C080-S	Infineon Technologies	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	4.5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel	1KX8	1K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified		SPI	8192 bit	2.7 V		e0		4.9 mm
SLE25C160-D	Infineon Technologies	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	4.5	3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	125 Cel	2KX8	2K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	4.7 mm	1000000000 Write/Erase Cycles	2.1 MHz	7.62 mm	Not Qualified	8 ms	SPI	16384 bit	2.7 V	SPI BUS INTERFACE; 32 BYTE PAGE MODE; 40 YEARS DATA RETENTION	e0		9.4 mm
SLA24C01-S-3	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	128X8	128	-40 Cel	TIN LEAD	1010XXXR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.73 mm	1000000 Write/Erase Cycles	.1 MHz	4 mm	Not Qualified	8 ms	I2C	1024 bit	2.7 V		e0	.00005 Amp	5 mm
SDA2516-5	Infineon Technologies	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	20 mA	128 words	5	5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	70 Cel	128X8	128	0 Cel	TIN LEAD	1010DDDR	DUAL		R-PDIP-T8	5.25 V	4.2 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified		I2C	1024 bit	4.75 V		e0	.02 Amp	10 mm
SLE24C164-S	Infineon Technologies	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel	2KX8	2K	-40 Cel	TIN LEAD	1DDDMMMR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	8 ms	I2C	16384 bit	2.7 V		e0	.00005 Amp	4.93 mm
SLE4404M2	Infineon Technologies	EEPROM	COMMERCIAL EXTENDED	8			PLASTIC/EPOXY			CMOS		SERIAL		3 mA		5	5		MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46	EEPROMs			80 Cel			-35 Cel											Not Qualified
SLA24C16-D-3	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE	R-PDIP-T8	5.5 V	4.37 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	16384 bit	2.7 V		e0	.00005 Amp	9.52 mm
SLE24C02-D	Infineon Technologies	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	3	5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	125 Cel	256X8	256	-40 Cel	TIN LEAD	1010XXXR	DUAL	HARDWARE	R-PDIP-T8	5.5 V	4.7 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	8 ms	I2C	2048 bit	2.7 V		e0	.00005 Amp	9.4 mm
SLE5532D	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5	5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		80 Cel	256X8	256	-40 Cel			UPPER	SOFTWARE	R-XUUC-N	5.5 V		100000 Write/Erase Cycles			Not Qualified	5 ms		2048 bit	4.5 V					5
SLA25C080-S	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	4.5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	1KX8	1K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified		SPI	8192 bit	2.7 V		e0		4.9 mm
SLE24C32-D/P	Infineon Technologies	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words	4.5	5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	125 Cel	4KX8	4K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	4.7 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	8 ms	I2C	32768 bit	2.7 V		e0	.000001 Amp	9.4 mm
SLE4432M2.2	Infineon Technologies	EEPROM	COMMERCIAL	8			PLASTIC/EPOXY			MOS		SERIAL		10 mA	256 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46	EEPROMs	10		70 Cel	256X8	256	0 Cel				SOFTWARE				10000 Write/Erase Cycles			Not Qualified			2048 bit				.01 Amp
SLE5532C	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5	5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		80 Cel	256X8	256	-40 Cel			UPPER	SOFTWARE	R-XUUC-N	5.5 V		100000 Write/Erase Cycles			Not Qualified	5 ms		2048 bit	4.5 V					5
SLA24C02-S-3/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD	1010XXXR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.73 mm	1000000 Write/Erase Cycles	.1 MHz	4 mm	Not Qualified	8 ms	I2C	2048 bit	2.7 V		e0	.00005 Amp	5 mm
SLA25C02-D-3	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5		8	IN-LINE				2.54 mm	85 Cel	256X8	256	-40 Cel			DUAL		R-PDIP-T8	5.5 V	4.37 mm		2 MHz	7.62 mm	Not Qualified	6 ms	SPI	2048 bit	2.7 V				9.52 mm
SLA24C04-S/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	512X8	512	-40 Cel	TIN LEAD	1010XXMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.94 mm	Not Qualified	8 ms	I2C	4096 bit	4.5 V		e0	.00005 Amp	4.93 mm
SLE24C16-D	Infineon Technologies	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	125 Cel	2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE	R-PDIP-T8	5.5 V	4.7 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	16384 bit	4.5 V		e0	.00005 Amp	9.4 mm
SLA24C164-S-3/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	2KX8	2K	-40 Cel	TIN LEAD	1DDDMMMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.73 mm	1000000 Write/Erase Cycles	.1 MHz	4 mm	Not Qualified	8 ms	I2C	16384 bit	2.7 V		e0	.00005 Amp	5 mm
SLA24C04-D-3	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	5	3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	512X8	512	-40 Cel	Tin/Lead (Sn/Pb)	1010XXMR	DUAL	HARDWARE	R-PDIP-T8	5.5 V	4.37 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	4096 bit	2.7 V		e0	.00005 Amp	9.52 mm
SLA24C16-D	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE	R-PDIP-T8	5.5 V	4.7 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	16384 bit	4.5 V		e0	.00005 Amp	9.4 mm
SLA24C32-S	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	4.5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	4KX8	4K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	8 ms	I2C	32768 bit	2.7 V		e0	.000001 Amp	4.9 mm
SLE5542C	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5	5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		80 Cel	256X8	256	-40 Cel			UPPER	SOFTWARE	R-XUUC-N	5.5 V		100000 Write/Erase Cycles			Not Qualified	5 ms		2048 bit	4.5 V					5
SLE5552C	Infineon Technologies	EEPROM	OTHER							MOS		SERIAL			256 words	5	5	8		DIE OR CHIP	EEPROMs	10		80 Cel	256X8	256	-40 Cel				SOFTWARE				100000 Write/Erase Cycles			Not Qualified			2048 bit
SLA24C08-S-3/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	1KX8	1K	-40 Cel	Tin/Lead (Sn/Pb)	1010XMMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.73 mm	1000000 Write/Erase Cycles	.1 MHz	4 mm	Not Qualified	8 ms	I2C	8192 bit	2.7 V		e0	.00005 Amp	5 mm
SLE4406SPEMFC3	Infineon Technologies	EEPROM	OTHER		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		1	MICROELECTRONIC ASSEMBLY					80 Cel	512X1	512	-40 Cel			DUAL		R-XDMA-N	5.5 V					Not Qualified			512 bit	4.5 V					5
SLE25C080-D/P	Infineon Technologies	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	4.5	3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	125 Cel	1KX8	1K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	4.7 mm	1000000000 Write/Erase Cycles	2.1 MHz	7.62 mm	Not Qualified		SPI	8192 bit	2.7 V		e0		9.4 mm
SLA24C32-D/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words	4.5	5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	4KX8	4K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	4.7 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	8 ms	I2C	32768 bit	2.7 V		e0	.000001 Amp	9.4 mm
SLA24C02-D-3/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD	1010XXXR	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	4.37 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	2048 bit	2.7 V		e0	.00005 Amp	9.52 mm
SLE4432M3	Infineon Technologies	EEPROM	COMMERCIAL EXTENDED	8		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		8	MICROELECTRONIC ASSEMBLY			10		80 Cel	256X8	256	-35 Cel			UNSPECIFIED		R-XXMA-N8	5.5 V		100000 Write/Erase Cycles			Not Qualified			2048 bit	4.75 V	DATA RETENTION => 10 YEARS; ENDURANCE =>100K WRITE/ERASE CYCLES				5
SDA2526	Infineon Technologies	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	SERIAL		10 mA	256 words	5	5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	70 Cel	256X8	256	0 Cel	Tin/Lead (Sn/Pb)	1010DDDR	DUAL		R-PDIP-T8			10000 Write/Erase Cycles			Not Qualified		I2C	2048 bit			e0	.01 Amp
SLA24C04-S	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	512X8	512	-40 Cel	TIN LEAD	1010XXMR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.94 mm	Not Qualified	8 ms	I2C	4096 bit	4.5 V		e0	.00005 Amp	4.93 mm
SLE4432C	Infineon Technologies	EEPROM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	256 words	5	5	8	UNCASED CHIP	WAFER	EEPROMs	10		80 Cel	256X8	256	-35 Cel			UPPER	SOFTWARE	X-XUUC-N	5.5 V		10000 Write/Erase Cycles			Not Qualified		I2C	2048 bit	4.75 V	DATA RETENTION => 10 YEARS; ENDURANCE =>100K WRITE/ERASE CYCLES		.01 Amp
SLA24C32-D-3/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words	5	3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	4KX8	4K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	4.37 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	32768 bit	2.7 V		e0	.000001 Amp	9.52 mm
SLE25C160-D/P	Infineon Technologies	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	4.5	3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	125 Cel	2KX8	2K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	4.7 mm	1000000000 Write/Erase Cycles	2.1 MHz	7.62 mm	Not Qualified	8 ms	SPI	16384 bit	2.7 V	SPI BUS INTERFACE; 32 BYTE PAGE MODE; 40 YEARS DATA RETENTION	e0		9.4 mm
SDA25X26-5	Infineon Technologies	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	20 mA	256 words	5	5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	70 Cel	256X8	256	0 Cel	TIN LEAD	1010DDDR	DUAL		R-PDIP-T8	5.25 V	4.37 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	20 ms	I2C	2048 bit	4.75 V		e0	.02 Amp	9.52 mm
SDE25X26A2	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	20 mA	256 words	5	5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	110 Cel	256X8	256	-40 Cel	TIN LEAD	1010DDDR	DUAL		R-PDIP-T8	5.25 V	4.37 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	20 ms	I2C	2048 bit	4.75 V	DATA RETENTION > 10 YEARS	e0	.02 Amp	9.52 mm
SLE5528M2	Infineon Technologies	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		8	UNCASED CHIP					100 Cel	1KX8	1K	-40 Cel			UPPER		R-XUUC-N	5.5 V					Not Qualified			8192 bit	4.5 V					5
SLE5518MFC3	Infineon Technologies	EEPROM	INDUSTRIAL		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		8	MICROELECTRONIC ASSEMBLY					100 Cel	1KX8	1K	-40 Cel			DUAL		R-XDMA-N	5.5 V					Not Qualified			8192 bit	4.5 V					5
SLE24C04-S/P	Infineon Technologies	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel	512X8	512	-40 Cel	TIN LEAD	1010XXMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.94 mm	Not Qualified	8 ms	I2C	4096 bit	4.5 V		e0	.00005 Amp	4.93 mm
SLA24C16-S/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.94 mm	Not Qualified	8 ms	I2C	16384 bit	4.5 V		e0	.00005 Amp	4.93 mm
SLA24C02-D/P	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5	5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	256X8	256	-40 Cel	Tin/Lead (Sn/Pb)	1010XXXR	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	4.7 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	2048 bit	4.5 V		e0	.00005 Amp	9.4 mm
SLE24C08-S	Infineon Technologies	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel	1KX8	1K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.94 mm	Not Qualified	8 ms	I2C	8192 bit	4.5 V		e0	.00005 Amp	4.93 mm
SLE25C040-S/P	Infineon Technologies	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	4.5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel	512X8	512	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified	8 ms	SPI	4096 bit	2.7 V	SPI BUS SERIAL INTERFACE; 40 YEARS DATA RETENTION; 8 BYTE PAGE MODE	e0		4.9 mm
SLA24C02-D-3	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD	1010XXXR	DUAL	HARDWARE	R-PDIP-T8	5.5 V	4.37 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	8 ms	I2C	2048 bit	2.7 V		e0	.00005 Amp	9.52 mm
SLE24C32-S/P	Infineon Technologies	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	4.5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel	4KX8	4K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	8 ms	I2C	32768 bit	2.7 V		e0	.000001 Amp	4.9 mm
SDE2526-5	Infineon Technologies	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	20 mA	256 words	5	5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	110 Cel	256X8	256	-40 Cel	TIN LEAD	1010DDDR	DUAL		R-PDIP-T8	5.25 V	4.37 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	20 ms	I2C	2048 bit	4.75 V	DATA RETENTION > 10 YEARS	e0	.02 Amp	9.52 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.