Maxim Integrated EEPROM 148

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
5962-3826718VMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD		DUAL		R-XDFP-F32		5.5 V	3.12 mm			11.05 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e4				20.825 mm	150 ns	5
5962-3826718Q7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-XDFP-F32		5.5 V	3.63 mm			10.414 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0					150 ns	5
5962-3826718VMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-XDFP-F32		5.5 V	3.12 mm			11.05 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0				20.825 mm	150 ns	5
5962-3826718V7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-XDFP-F32		5.5 V	3.63 mm			10.415 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0					150 ns	5
5962-3826719Q6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-XDFP-F32		5.5 V	3.81 mm			12.195 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0					120 ns	5
DS2433X-ZS	Maxim Integrated	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		512 words	5		8	GRID ARRAY					85 Cel			512X8	512	-40 Cel		TIN LEAD		BOTTOM		R-PBGA-B6		6 V	.864 mm			1.91 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e0				2.85 mm
5962-3826716Q6C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD		DUAL		R-XDFP-F32		5.5 V	3.81 mm			12.195 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e4					250 ns	5
5962-3826717Q7C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD		DUAL		R-XDFP-F32		5.5 V	3.63 mm			10.414 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e4					200 ns	5
DS2431X+	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20	EEPROMs	40	.5 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn)		BOTTOM	HARDWARE	S-PBGA-B6	1	5.25 V	.98 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260		1.68 mm			NO
DS28DG02E-3C+T	Maxim Integrated	EEPROM	INDUSTRIAL	28	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	256 words	3.3	2.5/5	8	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP28,.25	EEPROMs	40	.65 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN		DUAL	HARDWARE	R-PDSO-G28	1	5.25 V	1.1 mm	200000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified		SPI	2048 bit	2.2 V		e3			.0001 Amp	9.7 mm		3
5962-3826717Q6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-XDFP-F32		5.5 V	3.81 mm			12.195 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0					200 ns	5
DS1982U-A0B-116D+	Maxim Integrated
5962-3826719V7C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD		DUAL		R-XDFP-F32		5.5 V	3.63 mm			10.415 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e4					120 ns	5
DS1982U-F5-1168+	Maxim Integrated
5962-3826716VMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD		DUAL		R-XDFP-F32		5.5 V	3.12 mm			11.05 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e4				20.825 mm	250 ns	5
DS28CZ04G-4+T	Maxim Integrated	EEPROM	INDUSTRIAL	12	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.5 mA	512 words	3.6	2.5/5	8	CHIP CARRIER, VERY THIN PROFILE	LCC12,.16SQ,32	EEPROMs	40	.8 mm	85 Cel			512X8	512	-40 Cel		MATTE TIN	1010DDMR	QUAD	HARDWARE	S-XQCC-N12	1	5.25 V	.8 mm	200000 Write/Erase Cycles	.4 MHz	4 mm	Not Qualified		I2C	4096 bit	2 V		e3	30	260		4 mm		5
DS1972-F5#	Maxim Integrated	EEPROM	INDUSTRIAL	5		ROUND	METAL	NO	1	CMOS		WIRE	SERIAL	ASYNCHRONOUS		256 words		3/5	4	CYLINDRICAL	BUTTON,.68IN	EEPROMs	10		85 Cel			256X4	256	-40 Cel		MATTE TIN		BOTTOM		O-MBCY-W5		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS2433-Z01/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5		8	CYLINDRICAL					85 Cel			512X8	512	-40 Cel		TIN LEAD		BOTTOM		O-PBCY-T3		6 V					Not Qualified		1-WIRE	4096 bit	2.8 V		e0
5962-3826717VMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD		DUAL		R-XDFP-F32		5.5 V	3.12 mm			11.05 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e4				20.825 mm	200 ns	5
5962-3826719VMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD		DUAL		R-XDFP-F32		5.5 V	3.12 mm			11.05 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e4				20.825 mm	120 ns	5
5962-3826719V7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-XDFP-F32		5.5 V	3.63 mm			10.415 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0					120 ns	5
DS28E01P-100+T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words		3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-40 Cel				DUAL		R-XDSO-C6		5.25 V	1.5 mm	50000 Write/Erase Cycles		3.93 mm	Not Qualified		1-WIRE	1024 bit	2.8 V			30	260		4.62 mm
DS2432P-W07+3	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	5		1	SMALL OUTLINE				1.27 mm	85 Cel			1KX1	1K	-40 Cel				DUAL		R-PDSO-C6		5.25 V	1.5 mm			3.76 mm			1-WIRE	1024 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED		3.94 mm
DS1972-F3#	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	METAL	NO	1	CMOS		WIRE	SERIAL	ASYNCHRONOUS		256 words		3/5	4	CYLINDRICAL	BUTTON,.68IN	EEPROMs	10		85 Cel			256X4	256	-40 Cel		MATTE TIN		BOTTOM		O-MBCY-W3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS1982U-1151+A04	Maxim Integrated
5962-3826719Q7C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD		DUAL		R-XDFP-F32		5.5 V	3.63 mm			10.414 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e4					120 ns	5
DS1982U-F5-1181+	Maxim Integrated
5962-3826718Q7C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD		DUAL		R-XDFP-F32		5.5 V	3.63 mm			10.414 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e4					150 ns	5
DS2430AX#U	Maxim Integrated	EEPROM																																											1-WIRE					NOT SPECIFIED	NOT SPECIFIED
5962-3826718Q6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-XDFP-F32		5.5 V	3.81 mm			12.195 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0					150 ns	5
5962-3826717QMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-CDFP-F32		5.5 V	3.1242 mm			11.05 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0				20.828 mm	200 ns	5
5962-3826717QMC	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD		DUAL		R-CDFP-F32		5.5 V	3.12 mm			11.05 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e4				20.825 mm	200 ns	5
DS2430AX	Maxim Integrated	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		256 words	5	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4(UNSPEC)	EEPROMs			85 Cel			256X1	256	-40 Cel		TIN LEAD		BOTTOM		R-PBGA-B4	1	6 V	.596 mm	100000 Write/Erase Cycles		1.73 mm	Not Qualified		1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0				2.39 mm
DS2432X-S	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		1024 words	5	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4,40/20	EEPROMs	10	.5 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD		BOTTOM		R-PBGA-B6		5.25 V	.67 mm	50000 Write/Erase Cycles		1.75 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e0				1.98 mm
DS2433/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words	5		1	CYLINDRICAL					85 Cel			4KX1	4K	-40 Cel		TIN LEAD		BOTTOM		O-PBCY-T3		6 V			.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V		e0
5962-3826717V6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-XDFP-F32		5.5 V	3.81 mm			12.195 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0					200 ns	5
DS28CZ04-4+T	Maxim Integrated	EEPROM	INDUSTRIAL	12	HQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.5 mA	512 words		2.5/5	8	CHIP CARRIER, HEAT SINK/SLUG	LCC12,.16SQ,32	EEPROMs	50	.8 mm	85 Cel			512X8	512	-40 Cel			1010DDMR	QUAD	HARDWARE	S-XQCC-N12		5.25 V		200000 Write/Erase Cycles	.4 MHz		Not Qualified		I2C	4096 bit	2 V								5
DS2433Y	Maxim Integrated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words		3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs		1.27 mm	85 Cel			512X8	512	-40 Cel		TIN LEAD		DUAL		R-PDSO-G8	1	6 V	2.13 mm	100000 Write/Erase Cycles	.0163 MHz	5.285 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e0	20	240		5.31 mm
5962-3826716V7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-XDFP-F32		5.5 V	3.63 mm			10.415 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0					250 ns	5
5962-3826719QMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-CDFP-F32		5.5 V	3.12 mm			11.05 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0				20.825 mm	120 ns	5
DS2431X	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20	EEPROMs	40	.5 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD		BOTTOM		S-PBGA-B6		5.25 V	.77 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e0				1.68 mm
DS1961S-F3	Maxim Integrated	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words		3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs			85 Cel			1KX1	1K	-20 Cel		TIN LEAD		END		O-MEDB-N2	1	5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V		e0
DS1973-F3+W	Maxim Integrated
5962-3826719V6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-XDFP-F32		5.5 V	3.81 mm			12.195 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0					120 ns	5
5962-3826718Q6C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		GOLD		DUAL		R-XDFP-F32		5.5 V	3.81 mm			12.195 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e4					150 ns	5
DS2433X-S	Maxim Integrated	EEPROM	INDUSTRIAL	6	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		4096 words	5	3/5	1	GRID ARRAY, VERY THIN PROFILE	BGA6(UNSPEC)	EEPROMs		1.1 mm	85 Cel			4KX1	4K	-40 Cel				BOTTOM		R-PBGA-B6	1	6 V	.597 mm	50000 Write/Erase Cycles		2.54 mm	Not Qualified		1-WIRE	4096 bit	2.8 V				240		2.82 mm
DS1971-F5#W	Maxim Integrated
5962-3826716Q6X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5		8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel		TIN LEAD		DUAL		R-XDFP-F32		5.5 V	3.81 mm			12.195 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0					250 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.