Maxim Integrated EEPROM 148

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time	Programming Voltage (V)
DS2431P/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words		3.3	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel	1KX1	1K	-40 Cel	TIN LEAD	DUAL	R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e0	20	240	3.94 mm
DS2431P	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words		3.3	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel	1KX1	1K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e0	20	240	3.94 mm
DS2430AP/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		C BEND	SERIAL	ASYNCHRONOUS		256 words		5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs		1.27 mm	85 Cel	256X1	256	-40 Cel	TIN LEAD	DUAL	R-PDSO-C6	1	6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0			3.94 mm
DS2431X+S	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		1024 words		3.3	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20	EEPROMs	40	.5 mm	85 Cel	1KX1	1K	-40 Cel	MATTE TIN	BOTTOM	S-PBGA-B6		5.25 V	.77 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3			1.68 mm
DS2431X-S	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1024 words		3.3	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20	EEPROMs	10	.5 mm	85 Cel	1KX1	1K	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B6		5.25 V	.67 mm	50000 Write/Erase Cycles		1.75 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e0			1.98 mm
DS2431/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words		3.3	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	10	1.27 mm	85 Cel	1KX1	1K	-40 Cel	TIN LEAD	BOTTOM	R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e0
DS2431	Maxim Integrated	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words		3.3	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	10	1.27 mm	85 Cel	1KX1	1K	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e0	20	240
DS2430AP	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		C BEND	SERIAL	ASYNCHRONOUS		256 words		5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs		1.27 mm	85 Cel	256X1	256	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-C6	1	6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0	20	245	3.94 mm
DS2430A/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		256 words		5	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel	256X1	256	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		6 V		100000 Write/Erase Cycles	.0163 MHz		Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS2430A	Maxim Integrated	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		256 words		5	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel	256X1	256	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		6 V		100000 Write/Erase Cycles	.0163 MHz		Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS2433S+T&R	Maxim Integrated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		4096 words		5	3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs		1.27 mm	85 Cel	4KX1	4K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G8	1	6 V	2.13 mm	50000 Write/Erase Cycles	.0163 MHz	5.285 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e3	30	260	5.31 mm
DS2433S/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		4096 words		5	3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs		1.27 mm	85 Cel	4KX1	4K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	1	6 V	2.13 mm	50000 Write/Erase Cycles	.0163 MHz	5.285 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e0			5.31 mm
DS2433S+	Maxim Integrated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		4096 words		5	3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs		1.27 mm	85 Cel	4KX1	4K	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	1	6 V	2.13 mm	50000 Write/Erase Cycles	.0163 MHz	5.285 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e3	30	260	5.31 mm
DS2433S	Maxim Integrated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		4096 words		5	3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs		1.27 mm	85 Cel	4KX1	4K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G8	1	6 V	2.13 mm	50000 Write/Erase Cycles	.0163 MHz	5.285 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e0	20	240	5.31 mm
DS1990A-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3.3	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel	64X1	64	-40 Cel	TIN LEAD	END	O-MEDB-N2	1	6 V					Not Qualified		1-WIRE	64 bit	2.8 V		e0				15000 ns
DS1990A-F5#	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words				1	DISK BUTTON					85 Cel	64X1	64	-40 Cel	MATTE TIN	END	O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V		e3
DS1961S-F5#	Maxim Integrated	EEPROM	COMMERCIAL EXTENDED	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words		3.3		1	DISK BUTTON					85 Cel	1KX1	1K	-20 Cel	MATTE TIN	END	O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS1961S-F5	Maxim Integrated	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words			3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs			85 Cel	1KX1	1K	-20 Cel	TIN LEAD	END	O-MEDB-N2	1	5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V		e0	20	240
DS2433+	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words		5	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel	4KX1	4K	-40 Cel	MATTE TIN	BOTTOM	O-PBCY-T3	1	6 V		50000 Write/Erase Cycles	.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V		e3
DS2433	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words		5	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel	4KX1	4K	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	1	6 V		50000 Write/Erase Cycles	.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V		e0		245
DS2433S-Z01	Maxim Integrated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words		5		8	SMALL OUTLINE				1.27 mm	85 Cel	512X8	512	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8		6 V	2.13 mm			5.285 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e0			5.31 mm
DS1977-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		262144 words		3.3		1	DISK BUTTON					85 Cel	256KX1	256K	-40 Cel	TIN LEAD	END	O-MEDB-N2	1	5.25 V					Not Qualified		1-WIRE	262144 bit	2.8 V		e0
DS1977-F5+	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	7 mA	262144 words		3.3	3/5	1	DISK BUTTON	BUTTON,.68IN	EEPROMs	10		85 Cel	256KX1	256K	-40 Cel	MATTE TIN	END	O-MEDB-N2		5.25 V		100000 Write/Erase Cycles			Not Qualified		1-WIRE	262144 bit	2.8 V		e3
DS1971-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS		NO LEAD	SERIAL	ASYNCHRONOUS		32 words		5	3/5	8	DISK BUTTON	BUTTON,.68IN	EEPROMs			85 Cel	32X8	32	-40 Cel	TIN LEAD	END	O-MEDB-N2	1	6 V			.0163 MHz		Not Qualified		1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS28E04S-100/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		4096 words		3		1	SMALL OUTLINE				1.27 mm	85 Cel	4KX1	4K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G16		5.25 V	1.75 mm			3.9 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e0			9.9 mm
DS2430AT	Maxim Integrated	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		32 words		5	3/5	8	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel	32X8	32	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		6 V		100000 Write/Erase Cycles	.0163 MHz		Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS1973-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON					85 Cel	512X8	512	-40 Cel	TIN LEAD	END	O-MEDB-N2	1	6 V			.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V		e0
DS28E04S-100/T	Maxim Integrated	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		4096 words		3	3/5	1	SMALL OUTLINE	SOP16,.25	EEPROMs		1.27 mm	85 Cel	4KX1	4K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G16	1	5.25 V	1.75 mm	50000 Write/Erase Cycles		3.9 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e3	30	260	9.9 mm
DS2432P/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words		5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel	1KX1	1K	-40 Cel	TIN LEAD	DUAL	R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e0			3.94 mm
DS28E01P-100	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words			3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel	1KX1	1K	-40 Cel	TIN LEAD	DUAL	R-XDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.937 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e0			4.2926 mm
DS2430AX-S#T&R	Maxim Integrated	EEPROM																																							1-WIRE					NOT SPECIFIED	NOT SPECIFIED
DS28E04S-100	Maxim Integrated	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		4096 words		3	3/5	1	SMALL OUTLINE	SOP16,.25	EEPROMs		1.27 mm	85 Cel	4KX1	4K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G16		5.25 V	1.75 mm	50000 Write/Erase Cycles		3.9 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e0			9.9 mm
DS1990R-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3.3		1	DISK BUTTON					85 Cel	64X1	64	-40 Cel	TIN LEAD	END	O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V		e0
DS2433X-Z01	Maxim Integrated	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		512 words		5		8	GRID ARRAY					85 Cel	512X8	512	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B6		6 V	.864 mm			1.91 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e0			2.85 mm
DS2433G+T&R	Maxim Integrated	EEPROM	INDUSTRIAL	2	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4096 words		5	3/5	1	CHIP CARRIER	SURF MNT 2,.25SQ	EEPROMs			85 Cel	4KX1	4K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-XQCC-N2		6 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e4			6 mm
DS2432P	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words		5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel	1KX1	1K	-40 Cel	TIN LEAD	DUAL	R-PDSO-C6		5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e0	20	240	3.94 mm
DS2432P-100-011	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		C BEND	SERIAL			256 words			3/5	4	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel	256X4	256	-40 Cel		DUAL	R-PDSO-C6				50000 Write/Erase Cycles			Not Qualified			1024 bit
DS2430AV	Maxim Integrated	EEPROM	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		C BEND	SERIAL	ASYNCHRONOUS		32 words		5	3/5	8	SMALL OUTLINE, LOW PROFILE	SOC6,.17	EEPROMs		1.27 mm	85 Cel	32X8	32	-40 Cel	TIN LEAD	DUAL	R-PDSO-C6		6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0			3.94 mm
DS1973-F3	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON					85 Cel	512X8	512	-40 Cel	TIN LEAD	END	O-MEDB-N2	1	6 V			.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V		e0
DS28EL25Q+T	Maxim Integrated	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4096 words		1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.95 mm	85 Cel	4KX1	4K	-40 Cel	MATTE TIN	DUAL	S-PDSO-N6	1	1.89 V	.8 mm			3 mm			1-WIRE	4096 bit	1.71 V		e3	30	260	3 mm
DS25LV02K	Maxim Integrated	EEPROM																																							1-WIRE					NOT SPECIFIED	NOT SPECIFIED
DS25LV02R+T&R	Maxim Integrated	EEPROM	OTHER	5	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	2.5	2.5/5	8	SMALL OUTLINE	TSOP5/6,.11,37	Other Memory ICs		.95 mm	85 Cel	128X8	128	-30 Cel	MATTE TIN	DUAL	R-PDSO-G5	1	5.5 V					Not Qualified		1-WIRE	1024 bit	2.2 V		e3				15000 ns
5962-3826716QMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		8	FLATPACK				1.27 mm	125 Cel	128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-CDFP-F32		5.5 V	3.1242 mm			11.05 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0			20.828 mm	250 ns	5
DS28E01G-100+T&R	Maxim Integrated	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		1024 words			3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.25SQ	EEPROMs	40		85 Cel	1KX1	1K	-40 Cel	NICKEL PALLADIUM GOLD	BOTTOM	S-XBCC-B2		5.25 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e4			6 mm
DS1961S-F3#	Maxim Integrated	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	DISK BUTTON					85 Cel	1KX1	1K	-20 Cel	MATTE TIN	END	O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V		e3
5962-3826717V6C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		8	FLATPACK				1.27 mm	125 Cel	128KX8	128K	-55 Cel	GOLD	DUAL	R-XDFP-F32		5.5 V	3.81 mm			12.195 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e4				200 ns	5
5962-3826717Q7X	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		8	FLATPACK				1.27 mm	125 Cel	128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-XDFP-F32		5.5 V	3.63 mm			10.414 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0				200 ns	5
5962-3826718QMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		8	FLATPACK				1.27 mm	125 Cel	128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-CDFP-F32		5.5 V	3.1242 mm			11.05 mm	Not Qualified	10 ms		1048576 bit	4.5 V		e0			20.828 mm	150 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.